BYT62 Vishay Telefunken Silicon Mesa Rectifier Features D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristic Low reverse current Applications 94 9539 High voltage rectifier Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage =Repetitive peak reverse voltage Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction temperature Storage temperature range Test Conditions Type tp=10ms, half sinewave Tamb=25°C, RthJA 60K/W I(BR)R=1A, inductive load x Symbol VR =VRRM IFSM IFAV ER Value 2400 Unit V 10 350 60 A mA mJ Tj Tstg 175 –55...+190 °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant Symbol RthJA Value 60 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Reverse breakdown voltage Reverse recovery time Document Number 86033 Rev. 2, 24-Jun-98 Test Conditions IF=200mA IF=1A IF=1A, Tj=175°C IF=1A, Tj=–40°C VR=VRRM VR=VRRM, Tj=175°C VR=VRRM, Tj=–40°C IR=100mA IF=0.5A, IR=1A, iR=0.25A Type Symbol VF VF VF VF IR IR IR V(BR)R trr Min Typ Max 3.0 3.6 2.9 4.0 5 250 400 2500 5 Unit V V V V mA mA nA V ms www.vishay.de • FaxBack +1-408-970-5600 1 (3) BYT62 Vishay Telefunken 10 600 500 I F – Forward Current ( A ) PR – Maximum Reverse Power Dissipation ( mW ) Characteristics (Tj = 25_C unless otherwise specified) RthJA=30K/W 400 300 RthJA=60K/W 200 Tj = +175°C 1 Tj = +25°C 0.1 Tj = –40°C 0.01 100 VR = VR RM 0 0 40 80 120 160 0.001 200 0 Tj – Junction Temperature ( °C ) 95 9725 1 2 3 4 5 6 7 VF – Forward Voltage ( V ) 95 9727 Figure 3. Max. Forward Current vs. Forward Voltage Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature I R – Reverse Current ( mA ) 1000 VR = VR RM 100 10 1 0.1 0 95 9726 40 80 120 160 200 Tj – Junction Temperature ( °C ) Figure 2. Max. Reverse Current vs. Junction Temperature Dimensions in mm ∅ 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification 26 min. www.vishay.de • FaxBack +1-408-970-5600 2 (3) 4.2 max. 94 9538 technical drawings according to DIN specifications ∅ 0.82 max. 26 min. Document Number 86033 Rev. 2, 24-Jun-98 BYT62 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 86033 Rev. 2, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 3 (3)