1N5059...1N5062 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial–leaded glass envelope 94 9539 Applications Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Average g forward current Junction and storage temperature range Max. pulse energy in avalanche mode, non repetitive (inductive load switch off) Test Conditions Type 1N5059 1N5060 1N5061 1N5062 tp=10ms, half–sinewave RthJA=45K/W, Tamb=50°C RthJA=100K/W, Tamb=75°C I(BR)R=1A, indicutive load Symbol VR =VRRM IFSM IFAV IFAV Tj=Tstg Value 200 400 600 800 50 2 0.8 –55...+175 Unit V V V V A A A °C ER 20 mJ Value 45 100 Unit K/W K/W Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Document Number 86000 Rev. 2, 24-Jun-98 Test Conditions lead length l = 10mm, TL = constant on PC board with spacing 25 mm Symbol RthJA RthJA www.vishay.de • FaxBack +1-408-970-5600 1 (4) 1N5059...1N5062 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse breakdown voltage g Test Conditions IF=1A IF=2.5A VR=VRRM VR=VRRM, Tj=100°C VR=VRRM, Tj=150°C IR=100mA Reverse recovery time Diode capacitance IF=0.5A, IR=1A, iR=0.25A VR=0V, f=1MHz Reverse current Type 1N5059 1N5060 1N5061 1N5062 Symbol VF VF IR IR IR V(BR)R V(BR)R V(BR)R V(BR)R trr CD Min Typ 225 450 650 900 Max 1 1.15 1 10 100 1600 1600 1600 1600 4 50 Unit V V mA mA mA V V V V ms pF Characteristics (Tj = 25_C unless otherwise specified) 1000.0 PR – Reverse Power Dissipation ( mW ) 200 VR = VRRM VR = VRRM 160 1N5062 45K/W 120 I R – Reverse Current ( mA ) RthJA= 100K/W 1N5061 160K/W 80 1N5060 1N5059 40 100.0 0 1.0 0.1 25 15764 10.0 50 75 100 125 150 175 Tj – Junction Temperature ( °C ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (4) 25 15765 50 75 100 125 150 175 Tj – Junction Temperature ( °C ) Figure 2. Max. Reverse Current vs. Junction Temperature Document Number 86000 Rev. 2, 24-Jun-98 1N5059...1N5062 Vishay Telefunken 50 VR = VR RM half sinewave 2.5 2.0 f=1MHz CD – Diode Capacitance ( pF ) I FAV– Average Forward Current ( A ) 3.0 RthJA=45K/W l=10mm 1.5 1.0 RthJA=100K/W PCB: d=25mm 0.5 0 0 20 40 60 30 20 10 0 0.1 80 100 120 140 160 180 Tamb – Ambient Temperature ( °C ) 15763 40 1.0 10.0 100.0 VR – Reverse Voltage ( V ) 15766 Figure 5. Typ. Diode Capacitance vs. Reverse Voltage Figure 3. Max. Average Forward Current vs. Ambient Temperature IF – Forward Current ( A ) 100 Tj = 175°C 10 Tj = 25°C 1 0.1 0.01 0.001 0 15762 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 VF – Forward Voltage ( V ) Figure 4. Max. Forward Current vs. Forward Voltage Dimensions in mm ∅ 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification 26 min. 4.2 max. 94 9538 technical drawings according to DIN specifications ∅ 0.82 max. 26 min. Polarity: Cathode indicated by a band Document Number 86000 Rev. 2, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 3 (4) 1N5059...1N5062 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 4 (4) Document Number 86000 Rev. 2, 24-Jun-98