VISHAY BAS285

BAS285
Vishay Telefunken
Schottky Barrier Diode
Features
D Integrated protection ring against
static discharge
D Very low forward voltage
Applications
96 12009
Applications where a very low forward voltage is
required
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
Type
tp = 10 ms
tp ≤ 1 s
Symbol
VR
IFSM
IFRM
IF
IFAV
Tj
Tstg
Value
30
5
300
200
200
125
–65...+150
Unit
V
A
mA
mA
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
RthJA
Value
320
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Reverse current
Diode capacitance
Document Number 85501
Rev. 3, 01-Apr-99
Test Conditions
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V, tp=300ms
VR=1V, f=1MHz
Type
Symbol
VF
VF
VF
VF
VF
IR
CD
Min
Typ
Max
240
320
400
500
800
2.3
10
Unit
mV
mV
mV
mV
mV
mA
pF
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BAS285
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
PR – Reverse Power Dissipation ( mW )
200
1000
180
VR = 30 V
IF – Forward Current ( A )
160
140
PR–Limit
@100%VR
120
RthJA=
540K/W
100
80
PR–Limit
@80%VR
60
40
Tj = 150°C
100
Tj = 25°C
10
1
20
0.1
0
25
50
75
100
125
150
Tj – Junction Temperature ( °C )
15822
0
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1.0
1.5
Figure 3. Forward Current vs. Forward Voltage
10
1000
VR = VRRM
f=1MHz
9
CD – Diode Capacitance ( pF )
I R – Reverse Current ( mA )
0.5
VF – Forward Voltage ( V )
15824
100
10
8
7
6
5
4
3
2
1
1
25
15823
50
75
100
125
Tj – Junction Temperature ( °C )
Figure 2. Reverse Current vs. Junction Temperature
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0
0.1
150
15825
1.0
10.0
100.0
VR – Reverse Voltage ( V )
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 85501
Rev. 3, 01-Apr-99
BAS285
Vishay Telefunken
Dimensions in mm
96 12071
Document Number 85501
Rev. 3, 01-Apr-99
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BAS285
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85501
Rev. 3, 01-Apr-99