Infineon-IPAN60R800CE-DS-v02_00-EN

IPAN60R800CE
MOSFET
600VCoolMOSªCEPowerTransistor
PG-TO220FP
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Drain
Pin 2, Tab
Gate
Pin 1
Applications
Source
Pin 3
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
800
mΩ
ID.typ
8.4
A
Qg.typ
17.2
nC
ID,pulse
15.7
A
Eoss@400V
1.6
µJ
Type/OrderingCode
Package
IPAN60R800CE
PG-TO 220 FullPAK Narrow Lead
Final Data Sheet
Marking
60S800CE
1
RelatedLinks
see Appendix A
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
8.4
5.3
A
TC=25°C
TC=100°C
-
15.7
A
TC=25°C
-
-
72
mJ
ID=1A; VDD=50V; see table 11
EAR
-
-
0.17
mJ
ID=1A; VDD=50V; see table 11
Avalanche current, repetitive
IAR
-
-
1.0
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-220
Ptot
-
-
48
W
TC=25°C
Power dissipation (FullPAK)
TO-220FP
Ptot
-
-
27
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Mounting torque (FullPAK)
TO-220FP
-
-
-
50
Ncm M2.5 screws
Continuous diode forward current
IS
-
-
5.9
A
TC=25°C
Diode pulse current
IS,pulse
-
-
15.7
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Maximum diode commutation speed
dif/dt
-
-
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Insulation withstand voltage for
TO-220FP
VISO
-
-
2500
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
1)
TO220 equivalent,Limited by Tj max. Maximum duty cycle D=0.5
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
3
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
2Thermalcharacteristics
Table3Thermalcharacteristics(FullPAK)TO-220FP
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
4.6
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
80
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Final Data Sheet
Tsold
4
1.6mm (0.063 in.) from case for 10s
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=0.25mA
3.0
3.5
V
VDS=VGS,ID=0.17mA
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.68
1.76
0.80
-
Ω
VGS=10V,ID=2A,Tj=25°C
VGS=10V,ID=2A,Tj=150°C
Gate resistance
RG
-
11
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
2.5
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
373
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
27
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1)
Co(er)
-
18
-
pF
VGS=0V,VDS=0...480V
Effective output capacitance,
time related2)
Co(tr)
-
74
-
pF
ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time
td(on)
-
9
-
ns
VDD=400V,VGS=13V,ID=2.5A,
RG=6.8Ω;seetable10
Rise time
tr
-
7
-
ns
VDD=400V,VGS=13V,ID=2.5A,
RG=6.8Ω;seetable10
Turn-off delay time
td(off)
-
50
-
ns
VDD=400V,VGS=13V,ID=2.5A,
RG=6.8Ω;seetable10
Fall time
tf
-
12
-
ns
VDD=400V,VGS=13V,ID=2.5A,
RG=6.8Ω;seetable10
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
2
-
nC
VDD=480V,ID=2.5A,VGS=0to10V
Gate to drain charge
Qgd
-
8.9
-
nC
VDD=480V,ID=2.5A,VGS=0to10V
Gate charge total
Qg
-
17.2
-
nC
VDD=480V,ID=2.5A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=480V,ID=2.5A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)
Final Data Sheet
5
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=2.5A,Tj=25°C
250
-
ns
VR=400V,IF=2.5A,diF/dt=100A/µs;
see table 9
-
1.8
-
µC
VR=400V,IF=2.5A,diF/dt=100A/µs;
see table 9
-
16
-
A
VR=400V,IF=2.5A,diF/dt=100A/µs;
see table 9
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
6
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
4Electricalcharacteristicsdiagrams
Diagram2:Powerdissipation(FullPAK)
Diagram4:Max.transientthermalimpedance(FullPAK)
101
30
25
0.5
0.2
100
20
ZthJC[K/W]
Ptot[W]
0.1
15
0.05
0.02
0.01
10-1
10
single pulse
5
0
0
25
50
75
100
125
10-2
150
10-5
10-4
10-3
TC[°C]
10-2
10-1
Ptot=f(TC)
ZthJC=f(tP);parameter:D=tp/T
Diagram6:Safeoperatingarea(FullPAK)
Diagram8:Safeoperatingarea(FullPAK)
2
1 µs
101
101
10 µs
1 µs
10 µs
100 µs
100 µs
1 ms
0
10
10
0
1 ms
10 ms
10 ms
ID[A]
ID[A]
101
102
10
DC
10-1
10-2
10-3
10-3
100
101
102
103
DC
10-1
10-2
10-4
100
tp[s]
10-4
100
101
102
VDS[V]
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
7
103
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
Diagram9:Typ.outputcharacteristics
Diagram10:Typ.outputcharacteristics
16
10
20 V
10 V
9
14
8V
8
8V
12
20 V
10 V
7V
7
6
7V
ID[A]
ID[A]
10
8
6V
5
4
6
5.5 V
6V
3
4
5V
5.5 V
2
4.5 V
5V
2
1
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram11:Typ.drain-sourceon-stateresistance
Diagram12:Drain-sourceon-stateresistance
4.0
2.00
1.80
3.5
1.60
1.40
5.5 V
6V
6.5 V
7V
RDS(on)[Ω]
RDS(on)[Ω]
3.0
2.5
1.20
98%
typ
1.00
10 V
2.0
0.80
20 V
0.60
1.5
0.40
1.0
0
3
6
9
12
0.20
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=2.0A;VGS=10V
8
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
Diagram13:Typ.transfercharacteristics
Diagram14:Typ.gatecharge
16
10
25 °C
9
14
8
120 V
12
480 V
7
6
VGS[V]
ID[A]
10
150 °C
8
5
4
6
3
4
2
2
0
1
0
2
4
6
8
10
0
12
0
5
VGS[V]
10
15
20
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=2.5Apulsed;parameter:VDD
Diagram15:Forwardcharacteristicsofreversediode
Diagram16:Avalancheenergy
2
10
80
25 °C
125 °C
70
60
101
IF[A]
EAS[mJ]
50
40
30
100
20
10
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=1.0A;VDD=50V
9
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
Diagram17:Drain-sourcebreakdownvoltage
Diagram18:Typ.capacitances
104
700
680
660
103
Ciss
620
C[pF]
VBR(DSS)[V]
640
600
102
Coss
580
101
560
540
Crss
520
-75
-50
-25
0
25
50
75
100
125
150
175
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram19:Typ.Cossstoredenergy
2.5
2.0
Eoss[µJ]
1.5
1.0
0.5
0.0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
10
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
11
ID
VDS
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
6PackageOutlines
DOCUMENT NO.
Z8B00180155
DIM
A
A1
A2
b
b1
c
D
D1
E
e
e1
N
L
L1
Q
MILLIMETERS
MIN
4.60
2.60
2.47
0.56
1.01
0.46
15.90
9.58
10.40
MAX
4.80
2.80
2.67
0.69
1.35
0.59
16.10
9.78
10.60
INCHES
MIN
0.181
0.102
0.097
0.022
0.040
0.018
0.626
0.377
0.409
2.54 (BSC)
5.08 (BSC)
0
2.5
0
2.5
5mm
EUROPEAN PROJECTION
0.100 (BSC)
0.200 (BSC)
3
13.45
1.70
3.00
3.25
SCALE
MAX
0.189
0.110
0.105
0.027
0.053
0.023
0.634
0.385
0.417
3
13.75
1.90
3.20
3.45
0.530
0.067
0.118
0.128
0.541
0.075
0.126
0.136
ISSUE DATE
22-01-2016
REVISION
01
Figure1OutlinePG-TO220FullPAK-NarrowLead,dimensionsinmm/inches
Final Data Sheet
12
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
7AppendixA
Table11RelatedLinks
• IFXCoolMOSTMCEWebpage:www.infineon.com
• IFXCoolMOSTMCEapplicationnote:www.infineon.com
• IFXCoolMOSTMCEsimulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
13
Rev.2.0,2016-04-21
600VCoolMOSªCEPowerTransistor
IPAN60R800CE
RevisionHistory
IPAN60R800CE
Revision:2016-04-21,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-04-21
Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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©2016InfineonTechnologiesAG
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
14
Rev.2.0,2016-04-21