IPAW60R190CE MOSFET 600VCoolMOSªCEPowerTransistor PG-TO220FullPAKWideCreepage CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications •Widedistanceof4.25mmbetweentheleads Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 190 mΩ ID. 26.7 A Qg.typ 63 nC ID,pulse 59 A Eoss@400V 5.2 µJ Type/OrderingCode Package IPAW60R190CE PG - TO220 FullPAK WideCreepage Final Data Sheet Marking 60S190CE 1 RelatedLinks see Appendix A 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 26.7 16.9 A TC=25°C TC=100°C - 59 A TC=25°C - - 418 mJ ID=3.4A; VDD=50V; see table 10 EAR - - 0.63 mJ ID=3.4A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 3.4 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Full PAK) Ptot - - 34 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws IS - - 18.9 A TC=25°C Diode pulse current IS,pulse - - 59 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Power dissipation (Non FullPAK) TO-220 Ptot - - 176 W - Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj max. Maximum duty cycle D=0.50, TO-220 equivalent Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE 2Thermalcharacteristics Table3Thermalcharacteristics(FullPAK) Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 3.7 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=0.25mA 3.0 3.5 V VDS=VGS,ID=0.63mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.17 0.44 0.19 - Ω VGS=10V,ID=9.5A,Tj=25°C VGS=10V,ID=9.5A,Tj=150°C Gate resistance RG - 6 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1400 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 85 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 56 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 266 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=9.5A, RG=3.4Ω;seetable9 Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=9.5A, RG=3.4Ω;seetable9 Turn-off delay time td(off) - 90 - ns VDD=400V,VGS=13V,ID=9.5A, RG=3.4Ω;seetable9 Fall time tf - 8 - ns VDD=400V,VGS=13V,ID=9.5A, RG=3.4Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 7.6 - nC VDD=480V,ID=9.5A,VGS=0to10V Gate to drain charge Qgd - 32 - nC VDD=480V,ID=9.5A,VGS=0to10V Gate charge total Qg - 63 - nC VDD=480V,ID=9.5A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=9.5A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V 2) Final Data Sheet 5 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=9.5A,Tj=25°C 430 - ns VR=400V,IF=9.5A,diF/dt=100A/µs; see table 8 - 6.9 - µC VR=400V,IF=9.5A,diF/dt=100A/µs; see table 8 - 30 - A VR=400V,IF=9.5A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(FullPAK) Diagram2:Safeoperatingarea(FullPAK) 102 35 1 µs 10 µs 30 100 µs 101 1 ms 25 10 ms 20 ID[A] Ptot[W] 100 DC 10-1 15 10-2 10 10-3 5 0 0 25 50 75 100 125 10-4 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea(FullPAK) Diagram4:Max.transientthermalimpedance(FullPAK) 2 101 10 1 µs 10 µs 100 µs 101 0.5 1 ms 10 ms 10-1 100 ZthJC[K/W] ID[A] 100 DC 0.2 0.1 0.05 0.02 10-2 10-1 0.01 -3 10 single pulse 10-4 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] 10-1 100 101 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJC=f(tP);parameter:D=tp/T 7 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 60 40 20 V 20 V 10 V 10 V 55 35 8V 50 8V 45 30 40 7V 25 ID[A] ID[A] 35 7V 30 20 25 6V 5.5 V 10 5V 6V 20 15 5.5 V 10 5V 5 0 15 4.5 V 5 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 1.50 0.50 1.40 0.45 1.30 0.40 1.20 1.10 0.35 RDS(on)[Ω] RDS(on)[Ω] 1.00 0.90 5V 0.80 5.5 V 6V 7V 6.5 V 0.70 10 V 0.30 98% 0.25 typ 0.20 0.60 0.50 0.15 0.40 0.10 0.30 0.20 0 10 20 30 40 0.05 -40 -18 4 26 48 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 70 92 114 136 158 180 Tj[°C] RDS(on)=f(Tj);ID=3.4A;VGS=10V 8 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 60 10 25 °C 9 50 8 120 V 7 40 480 V VGS[V] ID[A] 6 150 °C 30 5 4 20 3 2 10 1 0 0 2 4 6 8 10 0 12 0 10 20 30 VGS[V] 40 50 60 70 80 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=9.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 450 25 °C 125 °C 400 350 101 IF[A] EAS[mJ] 300 100 250 200 150 100 50 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=3.4A;VDD=50V 9 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 700 680 Ciss 660 10 3 640 C[pF] VBR(DSS)[V] 620 600 102 Coss 580 560 101 Crss 540 520 500 -40 -20 0 20 40 60 80 100 120 140 160 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=0.25mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 7 6 Eoss[µJ] 5 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE 6PackageOutlines E A A1 D1 D Q P H b3 b2 b5 L L1 A2 b 0.381 B A c e DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS DIM A A1 A2 b b2 b3 b5 c D D1 E e N H L L1 Q MILLIMETERS MIN 4.50 2.34 2.65 0.75 0.98 1.00 3.00 0.40 15.47 MAX 4.90 2.74 2.95 0.90 1.26 1.40 0.60 16.27 MIN 0.177 0.092 0.104 0.030 0.039 0.039 0.118 0.016 0.609 MAX 0.193 0.108 0.116 0.035 0.050 0.055 0.024 0.641 9.17 10.70 SCALE 0 2 0 2 4 mm EUROPEAN PROJECTION 0.361 11.30 0.421 4.25 (BSC) 0.445 0.167 (BSC) 3 28.25 12.58 1.70 3.00 3.10 DOCUMENT NO. Z8B00176938 INCHES 3 29.45 13.38 2.30 3.30 3.50 1.112 0.495 0.067 0.118 0.122 1.159 0.527 0.091 0.130 0.138 ISSUE DATE 28-04-2015 REVISION 01 Figure1OutlinePG-TO220FullPAKWideCreepage,dimensionsinmm/inches Final Data Sheet 12 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE 7AppendixA Table11RelatedLinks • IFXCoolMOSTMCEWebpage:www.infineon.com • IFXCoolMOSTMCEapplicationnote:www.infineon.com • IFXCoolMOSTMCEsimulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 2016-03-31 600VCoolMOSªCEPowerTransistor IPAW60R190CE RevisionHistory IPAW60R190CE Revision:2016-03-31 Previous Revision Date Subjects (major changes since last revision) 2015-10-07 Release of final version 2016-03-31 Modified Id Ratings TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 2016-03-31