IPD60R1K0CE,IPU60R1K0CE MOSFET 600VCoolMOSªCEPowerTransistor DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features IPAK tab 1 tab 2 1 3 2 3 Drain Pin 2, Tab Gate Pin 1 •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 1000 mΩ Id. 6.8 A Qg.typ 13 nC ID,pulse 12 A Eoss@400V 1.3 µJ Type/OrderingCode Package IPD60R1K0CE PG-TO 252 IPU60R1K0CE PG-TO 251 Final Data Sheet Marking 60S1K0CE 1 RelatedLinks see Appendix A 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 6.8 4.3 A TC=25°C TC=100°C - 12 A TC=25°C - - 46 mJ ID=0.8A; VDD=50V; see table 11 EAR - - 0.13 mJ ID=0.8A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 0.8 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation TO-251, TO-252 Ptot - - 61 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 4.8 A TC=25°C Diode pulse current IS,pulse - - 12 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 2Thermalcharacteristics Table3ThermalcharacteristicsTO-251,TO252 Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 2.06 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max. Maximum duty cycle D=0.50 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=0.25mA 3.0 3.5 V VDS=VGS,ID=0.13mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.86 2.22 1.00 - Ω VGS=10V,ID=1.5A,Tj=25°C VGS=10V,ID=1.5A,Tj=150°C Gate resistance RG - 16 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 280 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 21 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 14 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 57 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω;seetable10 Rise time tr - 8 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω;seetable10 Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω;seetable10 Fall time tf - 13 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω;seetable10 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 1.5 - nC VDD=480V,ID=1.9A,VGS=0to10V Gate to drain charge Qgd - 6.5 - nC VDD=480V,ID=1.9A,VGS=0to10V Gate charge total Qg - 13 - nC VDD=480V,ID=1.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=1.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS 2) Final Data Sheet 4 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=1.9A,Tj=25°C 220 - ns VR=400V,IF=1.9A,diF/dt=100A/µs; see table 9 - 1.5 - µC VR=400V,IF=1.9A,diF/dt=100A/µs; see table 9 - 12 - A VR=400V,IF=1.9A,diF/dt=100A/µs; see table 9 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) Diagram2:Safeoperatingarea(NonFullPAK) 102 70 60 1 µs 101 10 µs 100 µs 1 ms 100 40 DC ID[A] Ptot[W] 50 30 10-1 20 10-2 10 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea(NonFullPAK) Diagram4:Max.transientthermalimpedance(NonFullPAK) 2 101 10 101 1 µs 10 µs 0.5 100 100 µs 100 0.2 ZthJC[K/W] ID[A] 1 ms DC 10-1 0.1 0.05 0.02 10-1 0.01 single pulse 10-2 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 6 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 12 8 20 V 11 10 V 20 V 7 10 V 10 8V 8V 9 6 7V 8 5 7V ID[A] ID[A] 7 6 4 6V 3 5.5 V 5V 5 4 6V 3 5.5 V 2 5V 1 2 1 0 4.5 V 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 5.0 2.00 4.5 1.80 1.60 4.0 1.40 5V 5.5V 6.5 V 6V 98% 7V RDS(on)[Ω] 3.5 RDS(on)[Ω] 20 VDS[V] 3.0 10 V typ 1.20 1.00 2.5 0.80 2.0 0.60 1.5 1.0 0.40 0 1 2 3 4 5 6 7 8 9 0.20 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=1.5A;VGS=10V 7 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 12 10 25 °C 9 10 8 120 V 480 V 7 8 VGS[V] ID[A] 6 150 °C 6 5 4 4 3 2 2 1 0 0 2 4 6 8 10 0 12 0 3 VGS[V] 6 9 12 15 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=1.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 50 25 °C 125 °C 40 101 IF[A] EAS[mJ] 30 20 0 10 10 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.8A;VDD=50V 8 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 700 680 660 103 Ciss 620 C[pF] VBR(DSS)[V] 640 600 102 Coss 580 101 560 540 Crss 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=0.25mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 2.0 Eoss[µJ] 1.5 1.0 0.5 0.0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 9 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 6PackageOutlines *) mold flash not included DIM A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 F1 F2 F3 F4 F5 F6 MILLIMETERS MIN MAX 2.16 2.41 0.00 0.15 0.64 0.89 0.65 1.15 5.00 5.50 0.46 0.60 0.46 0.98 5.97 6.22 5.02 5.84 6.40 6.73 4.70 5.60 2.29 (BSC) 4.57 (BSC) 3 9.40 10.48 1.18 1.70 0.90 1.25 0.51 1.00 10.60 6.40 2.20 5.80 5.76 1.20 INCHES MIN 0.085 0.000 0.025 0.026 0.197 0.018 0.018 0.235 0.198 0.252 0.185 0.370 0.046 0.035 0.020 MAX 0.095 0.006 0.035 0.045 0.217 0.024 0.039 0.245 0.230 0.265 0.220 0.090 (BSC) 0.180 (BSC) 3 0.413 0.067 0.049 0.039 0.417 0.252 0.087 0.228 0.227 0.047 DOCUMENT NO. Z8B00003328 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 01-09-2015 REVISION 05 Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 11 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE TO251-3-21/-341/-345 DOCUMENT NO. Z8B00003330 DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS MIN 2.16 0.90 0.64 0.65 4.95 0.46 0.46 5.97 5.04 6.35 4.70 INCHES MAX 2.41 1.14 0.89 1.15 5.50 0.60 0.89 6.22 5.77 6.73 5.21 MIN 0.085 0.035 0.025 0.026 0.195 0.018 0.018 0.235 0.198 0.250 0.185 2.29 4.57 3 8.89 0.85 0.89 MAX 0.095 0.045 0.035 0.045 0.217 0.024 0.035 0.245 0.227 0.265 0.205 0.090 0.180 3 9.65 2.29 1.37 0.350 0.033 0.035 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 31-08-2015 0.380 0.090 0.054 REVISION 04 Figure2OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 12 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 7AppendixA Table11RelatedLinks • IFXCoolMOSTMCEWebpage:www.infineon.com • IFXCoolMOSTMCEapplicationnote:www.infineon.com • IFXCoolMOSTMCEsimulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 2016-03-31 600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE RevisionHistory IPD60R1K0CE, IPU60R1K0CE Revision:2016-03-31 Previous Revision Date Subjects (major changes since last revision) 2014-09-25 Release of final version 2015-11-17 Updated to qualified for standard grade & updated package drawing 2016-03-31 Modified Id, Rthjc. Modified SOA, Zthjc curves TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 2016-03-31