IPP60R060C7 Data Sheet (1.7 MB, EN)

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
600VCoolMOS™C7PowerTransistor
IPP60R060C7
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
600VCoolMOS™C7PowerTransistor
IPP60R060C7
1Description
TO-220
tab
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•Suitableforapplicationssuchasserver,telecomandsolar
•Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto
lowEossandQg
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
60
mΩ
Qg.typ
68
nC
ID,pulse
135
A
ID,continuous @ Tj<150°C 54
A
[email protected]
8.1
µJ
Body diode di/dt
420
A/µs
Type/OrderingCode
Package
Marking
IPP60R060C7
PG-TO 220
60C7060
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
35
22
A
TC=25°C
TC=100°C
-
135
A
TC=25°C
-
-
159
mJ
ID=6.4A; VDD=50V; see table 10
EAR
-
-
0.80
mJ
ID=6.4A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
6.4
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
120
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
162
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
60
Ncm M3 and M3.5 screws
Continuous diode forward current
IS
-
-
35
A
TC=25°C
Diode pulse current2)
IS,pulse
-
-
135
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
20
V/ns
VDS=0...400V,ISD<=9.9A,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
420
A/µs
VDS=0...400V,ISD<=9.9A,Tj=25°C
see table 8
Insulation withstand voltage
VISO
-
-
n.a.
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
1)
Limited by Tj max.
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch
2)
Final Data Sheet
4
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
0.772
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W leaded
Thermal resistance, junction - ambient
RthJA
for SMD version
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Final Data Sheet
Tsold
5
1.6mm (0.063 in.) from case for 10s
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.5
4
V
VDS=VGS,ID=0.8mA
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.052
0.115
0.060
-
Ω
VGS=10V,ID=15.9A,Tj=25°C
VGS=10V,ID=15.9A,Tj=150°C
Gate resistance
RG
-
0.8
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
3
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
2850
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
54
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1)
Co(er)
-
101
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related2)
Co(tr)
-
1050
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
15.5
-
ns
VDD=400V,VGS=13V,ID=15.9A,
RG=3.3Ω;seetable9
Rise time
tr
-
11
-
ns
VDD=400V,VGS=13V,ID=15.9A,
RG=3.3Ω;seetable9
Turn-off delay time
td(off)
-
79
-
ns
VDD=400V,VGS=13V,ID=15.9A,
RG=3.3Ω;seetable9
Fall time
tf
-
4
-
ns
VDD=400V,VGS=13V,ID=15.9A,
RG=3.3Ω;seetable9
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
14
-
nC
VDD=400V,ID=15.9A,VGS=0to10V
Gate to drain charge
Qgd
-
23
-
nC
VDD=400V,ID=15.9A,VGS=0to10V
Gate charge total
Qg
-
68
-
nC
VDD=400V,ID=15.9A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.0
-
V
VDD=400V,ID=15.9A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
6
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=15.9A,Tj=25°C
390
-
ns
VR=400V,IF=15.9A,diF/dt=100A/µs;
see table 8
-
6
-
µC
VR=400V,IF=15.9A,diF/dt=100A/µs;
see table 8
-
32
-
A
VR=400V,IF=15.9A,diF/dt=100A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
7
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
103
180
160
100 µs
102
140
ID[A]
Ptot[W]
100
80
1 µs
DC
101
120
10 µs
1 ms
10 ms
100
10-1
60
40
10-2
20
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
100
10
100 µs
2
10
1 µs
0.5
1 ms
10 ms
DC
0.2
ZthJC[K/W]
101
ID[A]
10 µs
100
10-1
0.1
0.05
10-1
0.02
0.01
10-2
10-3
single pulse
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
8
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
200
120
20 V
10 V
8V
180
100
7V
160
20 V
10 V
8V
140
7V
6V
80
ID[A]
ID[A]
120
100
80
5.5 V
60
6V
40
60
5V
5.5 V
40
20
4.5 V
5V
20
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
0.25
5.5 V
0.24
20
VDS[V]
6.5 V
0.14
6V
0.13
7V
0.23
0.12
0.22
0.21
0.20
0.10
20 V
RDS(on)[Ω]
0.19
RDS(on)[Ω]
0.11
10 V
0.18
0.17
0.16
0.09
98%
0.08
typ
0.07
0.15
0.06
0.14
0.13
0.05
0.12
0.04
0.11
0.10
0
20
40
60
80
100
120
140
0.03
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=15.9A;VGS=10V
9
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
200
12
120 V
25 °C
180
10
160
140
400 V
8
VGS[V]
ID[A]
120
100
150 °C
6
80
4
60
40
2
20
0
0
2
4
6
8
10
0
12
0
10
20
30
VGS[V]
40
50
60
70
80
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=15.9Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
160
140
120
125 °C
101
25 °C
IF[A]
EAS[mJ]
100
80
60
100
40
20
10-1
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=6.4A;VDD=50V
10
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
105
700
680
104
Ciss
660
103
620
C[pF]
VBR(DSS)[V]
640
600
Coss
102
101
580
560
Crss
100
540
520
-60
-30
0
30
60
90
120
150
10-1
0
100
Tj[°C]
200
300
400
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
9
8
7
Eoss[µJ]
6
5
4
3
2
1
0
0
100
200
300
400
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
12
ID
VDS
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
7PackageOutlines
Figure1OutlinePG-TO220,dimensionsinmm/inches
Final Data Sheet
13
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
8AppendixA
Table11RelatedLinks
• IFXCoolMOSTMC7Webpage:www.infineon.com
• IFXCoolMOSTMC7applicationnote:www.infineon.com
• IFXCoolMOSTMC7simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
14
Rev.2.0,2015-11-30
600VCoolMOS™C7PowerTransistor
IPP60R060C7
RevisionHistory
IPP60R060C7
Revision:2015-11-30,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2015-11-30
Release of final version
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
15
Rev.2.0,2015-11-30