IPI60R199CP Data Sheet (388 KB, EN)

IPI60R199CP
CoolMOS® Power Transistor
Product Summary
Features
V DS @ Tj,max
• Lowest figure-of-merit R ONxQg
650
0.199 Ω
R DS(on),max
• Ultra low gate charge
V
Q g,typ
32
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO262
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
Package
IPI60R199CP
PG-TO262
Ordering Code
Marking
SP000103248
6R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
16
T C=100 °C
10
Pulsed drain current2)
I D,pulse
T C=25 °C
51
Avalanche energy, single pulse
E AS
I D=6.6 A, V DD=50 V
436
Avalanche energy, repetitive t AR2),3)
E AR
I D=6.6 A, V DD=50 V
0.66
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Rev. 2.2
Unit
A
mJ
6.6
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
139
W
-55 ... 150
°C
page 1
2011-12-20
IPI60R199CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
9.9
T C=25 °C
A
51
15
V/ns
Values
Unit
min.
typ.
max.
-
-
0.9
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
600
-
-
V
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.66 mA
2.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
10
-
3
3.5
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=9.9 A,
T j=25 °C
-
0.18
0.199
Ω
V GS=10 V, I D=9.9 A,
T j=150 °C
-
0.49
-
f =1 MHz, open drain
-
2
-
Gate resistance
Rev. 2.2
RG
page 2
Ω
2011-12-20
IPI60R199CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1520
-
-
72
-
-
69
-
-
180
-
-
10
-
-
5
-
-
50
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
8
-
Gate to drain charge
Q gd
-
11
-
Gate charge total
Qg
-
32
43
Gate plateau voltage
V plateau
-
5.0
-
V
-
0.9
1.2
V
-
340
-
ns
-
5.5
-
µC
-
33
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=9.9 A,
R G=3.3 Ω
pF
ns
Gate Charge Characteristics
V DD=400 V, I D=9.9 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=9.9 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.2
page 3
2011-12-20
IPI60R199CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
150
102
limited by on-state
resistance
1 µs
10 µs
100 µs
101
1 ms
I D [A]
P tot [W]
100
DC
10 ms
0
50
10
0
10-1
0
40
80
120
100
160
101
102
103
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z thJC =f(t P)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
75
100
0.5
20 V
10 V
60
8V
0.2
0.1
10
-1
I D [A]
Z thJC [K/W]
7V
45
0.05
6V
30
0.02
5.5 V
0.01
15
single pulse
5V
4.5 V
10-2
10-5
0
10-4
10-3
10-2
10-1
100
t p [s]
Rev. 2.2
0
5
10
15
20
V DS [V]
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IPI60R199CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
35
1.2
6.5 V
6V
20 V
30
10 V
1
7V
8V
5.5 V
5V
10 V
6V
25
0.8
R DS(on) [Ω]
5.5 V
I D [A]
20
15
5V
7V
0.6
0.4
10
4.5 V
0.2
5
0
0
0
5
10
15
20
0
10
20
30
40
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=9.9 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
0.6
80
0.5
C °25
60
I D [A]
R DS(on) [Ω]
0.4
0.3
40
98 %
C °150
typ
0.2
20
0.1
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.2
0
2
4
6
8
10
V GS [V]
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IPI60R199CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=9.9 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
25 °C, 98%
9
120 V
8
150 °C, 98%
25 °C
7
101
400 V
150 °C
I F [A]
V GS [V]
6
5
4
100
3
2
1
10-1
0
0
10
20
30
0
40
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=6.6 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
500
700
400
660
E AS [mJ]
V BR(DSS) [V]
300
200
620
580
100
0
540
20
60
100
140
180
T j [°C]
Rev. 2.2
-60
-20
20
60
100
140
180
T j [°C]
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2011-12-20
IPI60R199CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
12
104
Ciss
E oss [µJ]
C [pF]
10
8
3
102
Coss
4
101
Crss
100
0
0
100
200
300
400
500
Rev. 2.2
0
100
200
300
400
500
600
V DS [V]
V DS [V]
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2011-12-20
IPI60R199CP
Definition of diode switching characteristics
Rev. 2.2
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2011-12-20
IPI60R199CP
PG-TO262-3-1: Outlines
Rev. 2.2
page 9
2011-12-20
IPI60R199CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
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reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev. 2.2
page 10
2011-12-20