IPB60R199CP CoolMOS® Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS(on),max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO263 • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Server and Telecom Type Package Ordering Code Marking IPB60R199CP PG-TO263 SP000223256 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 16 T C=100 °C 10 Pulsed drain current2) I D,pulse T C=25 °C 51 Avalanche energy, single pulse E AS I D=6.6 A, V DD=50 V 436 Avalanche energy, repetitive t AR2),3) E AR I D=6.6 A, V DD=50 V 0.66 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Rev. 2.1 Unit A mJ 6.6 A V DS=0...480 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 139 W -55 ... 150 °C page 1 2009-04-06 IPB60R199CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Symbol Conditions Value Unit 9.9 T C=25 °C A 51 15 V/ns Values Unit min. typ. max. - - 0.9 SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm2 cooling area5) - 35 - reflow MSL1 - - 260 °C V Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient Soldering temperature, wave- & reflowsolderin allowed T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1.1 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 1 V DS=600 V, V GS=0 V, T j=150 °C - 10 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.9 A, T j=25 °C - 0.18 0.199 Ω V GS=10 V, I D=9.9 A, T j=150 °C - 0.49 - f =1 MHz, open drain - 2 - Gate resistance Rev. 2.1 RG page 2 Ω 2009-04-06 IPB60R199CP Parameter Values Symbol Conditions Unit min. typ. max. - 1520 - - 72 - - 69 - - 180 - - 10 - - 5 - - 50 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related6) C o(er) Effective output capacitance, time related7) C o(tr) Turn-on delay time t d(on) Rise time tr Turn-off delay time t d(off) Fall time tf - 5 - Gate to source charge Q gs - 8 - Gate to drain charge Q gd - 11 - Gate charge total Qg - 32 43 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 340 - ns - 5.5 - µC - 33 - A V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=9.9 A, R G=3.3 Ω pF ns Gate Charge Characteristics V DD=400 V, I D=9.9 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=9.9 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. 5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air 6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.1 page 3 2009-04-06 IPB60R199CP 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 150 102 limited by on-state resistance 1 µs 10 µs 100 µs 101 1 ms I D [A] P tot [W] 100 DC 10 ms 0 50 10 0 10-1 0 40 80 120 100 160 101 102 103 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics Z thJC =f(t P) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 75 100 0.5 20 V 10 V 60 8V 0.2 0.1 10 -1 I D [A] Z thJC [K/W] 7V 45 0.05 6V 30 0.02 5.5 V 0.01 15 single pulse 5V 4.5 V 10-2 10-5 0 10-4 10-3 10-2 10-1 100 t p [s] Rev. 2.1 0 5 10 15 20 V DS [V] page 4 2009-04-06 IPB60R199CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 35 1.2 6.5 V 6V 20 V 30 10 V 1 7V 8V 5.5 V 5V 10 V 6V 25 0.8 R DS(on) [Ω] 5.5 V I D [A] 20 15 5V 7V 0.6 0.4 10 4.5 V 0.2 5 0 0 0 5 10 15 20 0 10 20 30 40 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=9.9 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.6 80 0.5 C °25 60 I D [A] R DS(on) [Ω] 0.4 0.3 40 98 % C °150 typ 0.2 20 0.1 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 2.1 0 2 4 6 8 10 V GS [V] page 5 2009-04-06 IPB60R199CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=9.9 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 25 °C, 98% 9 120 V 8 150 °C, 98% 25 °C 7 101 400 V 150 °C I F [A] V GS [V] 6 5 4 100 3 2 1 10-1 0 0 10 20 30 0 40 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=6.6 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 500 700 400 660 E AS [mJ] V BR(DSS) [V] 300 200 620 580 100 0 540 20 60 100 140 180 T j [°C] Rev. 2.1 -60 -20 20 60 100 140 180 T j [°C] page 6 2009-04-06 IPB60R199CP 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 105 12 104 Ciss E oss [µJ] C [pF] 10 8 3 102 Coss 4 101 Crss 100 0 0 100 200 300 400 500 Rev. 2.1 0 100 200 300 400 500 600 V DS [V] V DS [V] page 7 2009-04-06 IPB60R199CP Definition of diode switching characteristics Rev. 2.1 page 8 2009-04-06 IPB60R199CP PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines Rev. 2.1 page 9 2009-04-06 IPB60R199CP Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 2009-04-06