INFINEON IPB60R199CP_09

IPB60R199CP
CoolMOS® Power Transistor
Product Summary
Features
V DS @ Tj,max
• Lowest figure-of-merit R ONxQg
650
0.199 Ω
R DS(on),max
• Ultra low gate charge
V
Q g,typ
32
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO263
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
Package
Ordering Code
Marking
IPB60R199CP
PG-TO263
SP000223256
6R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
16
T C=100 °C
10
Pulsed drain current2)
I D,pulse
T C=25 °C
51
Avalanche energy, single pulse
E AS
I D=6.6 A, V DD=50 V
436
Avalanche energy, repetitive t AR2),3)
E AR
I D=6.6 A, V DD=50 V
0.66
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Rev. 2.1
Unit
A
mJ
6.6
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
139
W
-55 ... 150
°C
page 1
2009-04-06
IPB60R199CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
9.9
T C=25 °C
A
51
15
V/ns
Values
Unit
min.
typ.
max.
-
-
0.9
SMD version, device
on PCB, minimal
footprint
-
-
62
SMD version, device
on PCB, 6 cm2 cooling
area5)
-
35
-
reflow MSL1
-
-
260
°C
V
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Thermal resistance, junction ambient
Soldering temperature,
wave- & reflowsolderin allowed
T sold
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=1.1 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
10
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=9.9 A,
T j=25 °C
-
0.18
0.199
Ω
V GS=10 V, I D=9.9 A,
T j=150 °C
-
0.49
-
f =1 MHz, open drain
-
2
-
Gate resistance
Rev. 2.1
RG
page 2
Ω
2009-04-06
IPB60R199CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1520
-
-
72
-
-
69
-
-
180
-
-
10
-
-
5
-
-
50
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
C o(tr)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
8
-
Gate to drain charge
Q gd
-
11
-
Gate charge total
Qg
-
32
43
Gate plateau voltage
V plateau
-
5.0
-
V
-
0.9
1.2
V
-
340
-
ns
-
5.5
-
µC
-
33
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=9.9 A,
R G=3.3 Ω
pF
ns
Gate Charge Characteristics
V DD=400 V, I D=9.9 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=9.9 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air
6)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.1
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2009-04-06
IPB60R199CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
150
102
limited by on-state
resistance
1 µs
10 µs
100 µs
101
1 ms
I D [A]
P tot [W]
100
DC
10 ms
0
50
10
0
10-1
0
40
80
120
100
160
101
102
103
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z thJC =f(t P)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
75
100
0.5
20 V
10 V
60
8V
0.2
0.1
10
-1
I D [A]
Z thJC [K/W]
7V
45
0.05
6V
30
0.02
5.5 V
0.01
15
single pulse
5V
4.5 V
10-2
10-5
0
10-4
10-3
10-2
10-1
100
t p [s]
Rev. 2.1
0
5
10
15
20
V DS [V]
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IPB60R199CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
35
1.2
6.5 V
6V
20 V
30
10 V
1
7V
8V
5.5 V
5V
10 V
6V
25
0.8
R DS(on) [Ω]
5.5 V
I D [A]
20
15
5V
7V
0.6
0.4
10
4.5 V
0.2
5
0
0
0
5
10
15
20
0
10
20
30
40
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=9.9 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
0.6
80
0.5
C °25
60
I D [A]
R DS(on) [Ω]
0.4
0.3
40
98 %
C °150
typ
0.2
20
0.1
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.1
0
2
4
6
8
10
V GS [V]
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IPB60R199CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=9.9 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
25 °C, 98%
9
120 V
8
150 °C, 98%
25 °C
7
101
400 V
150 °C
I F [A]
V GS [V]
6
5
4
100
3
2
1
10-1
0
0
10
20
30
0
40
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=6.6 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
500
700
400
660
E AS [mJ]
V BR(DSS) [V]
300
200
620
580
100
0
540
20
60
100
140
180
T j [°C]
Rev. 2.1
-60
-20
20
60
100
140
180
T j [°C]
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IPB60R199CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
12
104
Ciss
E oss [µJ]
C [pF]
10
8
3
102
Coss
4
101
Crss
100
0
0
100
200
300
400
500
Rev. 2.1
0
100
200
300
400
500
600
V DS [V]
V DS [V]
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IPB60R199CP
Definition of diode switching characteristics
Rev. 2.1
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2009-04-06
IPB60R199CP
PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines
Rev. 2.1
page 9
2009-04-06
IPB60R199CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 10
2009-04-06