IPI60R385CP Data Sheet (317 KB, EN)

IPI60R385CP
CoolMOSTM Power Transistor
Product Summary
Features
V DS @ Tj,max
• Lowest figure-of-merit R ON x Qg
650
0.385 Ω
R DS(on),max
• Ultra low gate charge
V
Q g,typ
17
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO262
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
Package
Ordering Code
Marking
IPI60R385CP
PG-TO262
SP000103250
6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
9.0
T C=100 °C
5.7
Pulsed drain current2)
I D,pulse
T C=25 °C
27
Avalanche energy, single pulse
E AS
I D=3.4 A, V DD=50 V
227
Avalanche energy, repetitive t AR2),3)
E AR
I D=3.4 A, V DD=50 V
0.3
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Rev. 2.1
Unit
A
mJ
3
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
83
W
-55 ... 150
°C
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2007-02-15
IPI60R385CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
5.2
T C=25 °C
A
27
15
V/ns
Values
Unit
min.
typ.
max.
-
-
1.5
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
V
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.34 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
10
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=5.2 A,
T j=25 °C
-
0.35
0.385
Ω
V GS=10 V, I D=5.2 A,
T j=150 °C
-
0.94
-
f =1 MHz, open drain
-
1.8
-
Gate resistance
Rev. 2.1
RG
page 2
Ω
2007-02-15
IPI60R385CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
790
-
-
38
-
-
36
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
-
96
-
Turn-on delay time
t d(on)
-
10
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
40
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
4
-
Gate to drain charge
Q gd
-
6
-
Gate charge total
Qg
-
17
22
Gate plateau voltage
V plateau
-
5.0
-
V
-
0.9
1.2
V
-
260
-
ns
-
3.1
-
µC
-
24
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=5.2 A,
R G=3.3 Ω
ns
Gate Charge Characteristics
V DD=400 V, I D=5.2 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=5.2 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD=ID, di/dt<=400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.1
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IPI60R385CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
100
limited by on-state
resistance
80
1 µs
10 µs
101
60
I D [A]
P tot [W]
100 µs
1 ms
40
DC
100
10 ms
20
10-1
0
0
40
80
120
100
160
101
102
T C [°C]
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z thJC=f(t P)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
25
20 V
8V
10 V
7V
20
100
6V
0.5
Z thJC [K/W]
15
I D [A]
0.2
0.1
0.05
10-1
5.5 V
10
0.02
0.01
5V
5
single pulse
4.5 V
10-2
10-5
0
10-4
10-3
10-2
10-1
100
Rev. 2.1
0
5
10
15
20
V DS [V]
t p [s]
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IPI60R385CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
16
1.6
8V
14
6V
7V
10 V
7V
5V
5.5 V
6V
20 V
12
6.5 V
1.2
20 V
5.5 V
8
R DS(on) [Ω]
I D [A]
10
5V
0.8
6
4.5 V
4
0.4
2
0
0
0
5
10
15
20
0
5
10
15
20
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=5.2 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
1.2
40
36
1
32
28
0.8
24
I D [A]
R DS(on) [Ω]
C °25
0.6
C °150
16
98 %
0.4
20
typ
12
8
0.2
4
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.1
0
2
4
6
8
10
V GS [V]
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IPI60R385CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=5.2 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
9
8
120 V
7
400 V
150 °C, 98%
25 °C
150 °C
101
I F [A]
V GS [V]
6
5
4
100
3
25 °C, 98%
2
1
10-1
0
0
5
10
15
0
20
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=3.4 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
700
250
200
660
E AS [mJ]
V BR(DSS) [V]
150
100
620
580
50
540
0
20
60
100
140
180
T j [°C]
Rev. 2.1
-60
-20
20
60
100
140
180
T j [°C]
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IPI60R385CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
6
105
104
4
E oss [µJ]
C [pF]
10
Ciss
3
102
Coss
2
101
Crss
10
0
0
0
100
200
300
400
500
V DS [V]
Rev. 2.1
0
100
200
300
400
500
600
V DS [V]
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IPI60R385CP
Definition of diode switching characteristics
Rev. 2.1
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IPI60R385CP
PG-TO262-3-1 : Outlines
Dimensions in mm/inches:
Rev. 2.1
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2007-02-15
IPI60R385CP
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
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For further information on technology, delivery terms and conditions and prices please contact your neares
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in question please contact your nearest Infineon Technologies Office.
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user or other persons may be endangered.
Rev. 2.1
page 10
2007-02-15