SPP15N65C3 Data Sheet (253 KB, EN)

SPP15N65C3
CoolMOSTM Power Transistor
Product Summary
Features
• Low gate charge
• Extreme dv/dt rated
V DS
650
V
R DS(on),max
0.28
Ω
63
nC
Q g,typ
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
PG-TO220-3-1
CoolMOS C3 designed for:
• Notebook Adapter
Type
Package
Marking
SPP15N65C3
PG-TO220-3
15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
15
T C=100 °C
9.4
Pulsed drain current3)
I D,pulse
T C=25 °C
45
Avalanche energy, single pulse
E AS
I D=3 A, V DD=50 V
460
Avalanche energy, repetitive t AR2),3)
E AR
I D=5 A, V DD=50 V
0.8
Avalanche current, repetitive t AR3),4)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Rev. 2.0
Unit
A
mJ
5.0
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f>1 Hz)
±30
T C=25 °C
156
W
-55 ... 150
°C
page 1
2007-12-13
SPP15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current 2)
IS
Diode pulse current 3)
I S,pulse
Parameter
Symbol Conditions
Value
Unit
15
T C=25 °C
A
45
Values
Unit
min.
typ.
max.
-
-
0.8
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
650
-
-
V
2.1
3
3.9
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Gate threshold voltage
V GS(th)
V DS=V GS,
I D=0.675 mA
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
0.5
25
V DS=600 V, V GS=0 V,
T j=150 °C
-
25
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=9.4 A,
T j=25 °C
-
0.25
0.28
Ω
V GS=10 V, I D=9.4 A,
T j=150 °C
-
0.68
-
f =1 MHz, open drain
-
1.4
-
Gate resistance
Rev. 2.0
RG
page 2
Ω
2007-12-13
SPP15N65C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1600
-
-
540
-
-
67
-
-
120
-
-
32
-
-
14
-
-
70
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
Turn-on delay time
t d(on)
V GS=0 V, V DS=25 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=15 A,
R G=6.8 Ω
ns
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
-
11
-
Gate to source charge
Q gs
-
9
-
Gate to drain charge
Q gd
-
29
-
Gate charge total
Qg
-
63
Gate plateau voltage
V plateau
-
5.4
-
V
-
1.0
1.2
V
-
420
-
ns
-
8
-
µC
-
32
-
A
Gate Charge Characteristics
V DD=480 V, I D=15 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=15 A,
T j=25 °C
V R=480 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature.
3)
Pulse width t p limited by T j,max
4)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2007-12-13
SPP15N65C3
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
160
limited by on-state
resistance
140
1 µs
120
10 µs
101
100 µs
I D [A]
P tot [W]
100
80
1 ms
DC
10 ms
60
10
0
40
20
10-1
0
0
25
50
75
100
125
100
150
101
T C [°C]
102
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z(thJC)=f(tp)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
100
50
20 V
10 V
0.5
8V
40
7V
30
0.1
10
6V
I D [A]
Z thJC [K/W]
0.2
-1
0.05
20
0.02
5.5 V
0.01
single pulse
10
5V
4.5 V
10
-2
10-5
0
10-4
10-3
10-2
10-1
t p [s]
Rev. 2.0
0
5
10
15
20
25
V DS [V]
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2007-12-13
SPP15N65C3
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
25
4
20 V
10 V
20 V
8V
7V
20
6V
3
5.5 V
7V
R DS(on) [Ω]
I D [A]
15
5V
10
2
6.5 V
6V
4.5 V
1
5.5 V
5
5V
0
0
0
5
10
15
20
25
0
10
20
V DS [V]
30
40
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D= 9.4 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
50
0.8
25°C
40
30
I D [A]
R DS(on) [Ω]
0.6
0.4
98 %
150°C
20
typ
0.2
10
0
0
-50
0
50
100
150
0
T j [°C]
Rev. 2.0
2
4
6
8
10
V GS [V]
page 5
2007-12-13
SPP15N65C3
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D= 15 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
150 °C, 98%
9
120 V
8
25 °C
7
480 V
101
25 °C, 98%
150 °C
I F [A]
V GS [V]
6
5
4
100
3
2
1
0
0
20
40
60
0
80
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=3 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
500
740
720
400
700
680
E AS [mJ]
V BR(DSS) [V]
300
200
660
640
620
100
600
0
580
20
60
100
140
180
T j [°C]
Rev. 2.0
-50
-10
30
70
110
150
T j [°C]
page 6
2007-12-13
SPP15N65C3
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
12
105
104
9
Ciss
C [pF]
E oss [µJ]
103
Coss
102
6
3
Crss
101
100
0
0
100
200
300
400
500
V DS [V]
Rev. 2.0
0
100
200
300
400
500
600
V DS [V]
page 7
2007-12-13
SPP15N65C3
Definition of diode switching characteristics
Rev. 2.0
page 8
2007-12-13
SPP15N65C3
PG-TO220-3: Outlines
Rev. 2.0
page 9
2007-12-13
SPP15N65C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
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reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 10
2007-12-13