SiB800EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET. These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform." R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient-Mosfet Case-Mosfet Ambient-Schottky Case-Schottky RT1 29.4011 17.2996 29.4011 17.2996 RT2 22.7853 12.4294 22.7853 12.4294 RT3 29.5053 753.4000 m 29.5053 753.4000 m RT4 33.3083 9.5176 33.3083 9.5176 Thermal Capacitance (Joules/°C) Junction to Ambient-Mosfet Case-Mosfet Ambient-Schottky Case-Schottky CT1 521.0398 u 180.6510 u 521.0398 u 180.6510 u CT2 37.0029 u 527.3307 u 37.0029 u 527.3307 u CT3 7.5157 m 72.2282 m 7.5157 m 72.2282 m CT4 782.3250 m 36.5543 u 782.3250 m 36.5543 u This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 68914 Revision: 13-Aug-08 www.vishay.com 1 SiB800EDK_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient-Mosfet Case-Mosfet Ambient-Schottky Case-Schottky RF1 29.9575 14.8268 29.9575 14.8268 RF2 32.5016 19.3796 32.5016 19.3796 RF3 21.0465 5.6687 21.0465 5.6687 RF4 31.4944 124.9000 m 31.4944 124.9000 m Junction to Ambient-Mosfet Case-Mosfet Ambient-Schottky Case-Schottky CF1 39.3463 u 29.3109 u 39.3463 u 29.3109 u CF2 772.6887 u 123.6870 u 772.6887 u 123.6870 u Thermal Capacitance (Joules/°C) CF3 15.1779 m 813.3045 u 15.1779 m 813.3045 u CF4 854.3304 m 278.1963 u 854.3304 m 278.1963 u Note NA indicates not applicable www.vishay.com 2 Document Number: 68914 Revision: 13-Aug-08 SiB800EDK_RC Vishay Siliconix Document Number: 68914 Revision: 13-Aug-08 www.vishay.com 3 SiB800EDK_RC Vishay Siliconix www.vishay.com 4 Document Number: 68914 Revision: 13-Aug-08