MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPZ60R099P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPZ60R099P6 1Description PG-TO247-4 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •BestinclassRDS(on)/package •Easytouse/driveduetodriversourcepinforbettercontrolofthegate •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) •4-pinkelvinsourceconcept Drain Pin 1 Gate Pin 4 Driver Source Pin 3 Power Source Pin 2 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.Computing,Server,TelecomandUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 99 mΩ Qg.typ 70 nC ID,pulse 109 A Eoss@400V 8.8 µJ Body diode di/dt 250 A/µs Type/OrderingCode Package Marking IPZ60R099P6 PG-TO 247-4 6R099P6 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 37.9 24.0 A TC=25°C TC=100°C - 109 A TC=25°C - - 796 mJ ID=6.6A; VDD=50V; see table 10 EAR - - 1.21 mJ ID=6.6A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 6.6 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 278 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws Continuous diode forward current IS - - 32.9 A TC=25°C Diode pulse current2) IS,pulse - - 109 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 250 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 0.45 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 5 1.6mm (0.063 in.) from case for 10s Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4.0 4.5 V VDS=VGS,ID=1.21mA - 10 5 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.089 0.232 0.099 - Ω VGS=10V,ID=14.5A,Tj=25°C VGS=10V,ID=14.5A,Tj=150°C Gate resistance RG - 1 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 3330 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 140 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 110 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 495 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 18 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω;seetable9 Rise time tr - 9 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω;seetable9 Turn-off delay time td(off) - 47 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω;seetable9 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 20 - nC VDD=400V,ID=18.1A,VGS=0to10V Gate to drain charge Qgd - 24 - nC VDD=400V,ID=18.1A,VGS=0to10V Gate charge total Qg - 70 - nC VDD=400V,ID=18.1A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=18.1A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 6 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=18.1A,Tj=25°C 470 - ns VR=400V,IF=18.1A,diF/dt=100A/µs; see table 8 - 9 - µC VR=400V,IF=18.1A,diF/dt=100A/µs; see table 8 - 37 - A VR=400V,IF=18.1A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 300 103 250 102 200 101 1 µs 10 µs 100 µs ID[A] Ptot[W] 1 ms 150 DC 100 10-1 50 10-2 0 0 25 50 75 100 125 10-3 150 10 ms 100 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 10 101 1 µs 10 µs 100 µs 101 1 ms 100 10 ms ZthJC[K/W] 100 ID[A] DC 10-1 0.5 10-1 0.2 0.1 0.05 10-2 0.02 0.01 -3 10 100 101 102 103 10 -2 single pulse 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 120 70 110 50 8V 80 7V 45 70 40 60 ID[A] ID[A] 8V 55 90 7V 35 30 50 6V 25 40 20 30 5.5 V 15 20 6V 10 5.5 V 5V 0 10 V 60 10 V 100 20 V 65 20 V 4.5 V 0 5 10 10 5V 5 15 0 20 4.5 V 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.55 0.30 0.50 0.25 0.45 0.20 5.5 V 0.35 6V 6.5 V 0.30 7V RDS(on)[Ω] RDS(on)[Ω] 0.40 10 V 20 V 0.15 typ 98% 0.25 0.10 0.20 0.15 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0.05 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=14.5A;VGS=10V 9 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 120 10 9 25 °C 100 8 120 V 480 V 7 80 VGS[V] ID[A] 6 60 150 °C 5 4 40 3 2 20 1 0 0 2 4 6 8 10 12 0 14 0 10 20 30 VGS[V] 40 50 60 70 80 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=18.1Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 800 700 600 101 IF[A] 125 °C EAS[mJ] 500 25 °C 400 300 100 200 100 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=6.6A;VDD=50V 10 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 700 Ciss 680 660 103 620 C[pF] VBR(DSS)[V] 640 600 Coss 102 580 101 560 Crss 540 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 10 9 8 7 Eoss[µJ] 6 5 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 7PackageOutlines Figure1OutlinePG-TO247-4 Final Data Sheet 13 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 8AppendixA Table11RelatedLinks • IFXCoolMOSTMP6Webpage:www.infineon.com • IFXCoolMOSTMP6applicationnote:www.infineon.com • IFXCoolMOSTMP6simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 RevisionHistory IPZ60R099P6 Revision:2015-07-13,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-07-13 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2015-07-13