MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPZ60R070P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPZ60R070P6 1Description PG-TO247-4 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •BestinclassRDS(on)/package •Easytouse/driveduetodriversourcepinforbettercontrolofthegate •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) •4-pinkelvinsourceconcept Drain Pin 1 Gate Pin 4 Driver Source Pin 3 Power Source Pin 2 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.Computing,Server,TelecomandUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 70 mΩ Qg.typ 100 nC ID,pulse 156 A Eoss@400V 12.3 µJ Body diode di/dt 250 A/µs Type/OrderingCode Package Marking IPZ60R070P6 PG-TO 247-4 6R070P6 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 53.5 33.8 A TC=25°C TC=100°C - 156 A TC=25°C - - 1136 mJ ID=9.3A; VDD=50V; see table 10 EAR - - 1.72 mJ ID=9.3A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 9.3 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 391 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws Continuous diode forward current IS - - 46.3 A TC=25°C Diode pulse current2) IS,pulse - - 156 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 250 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 0.32 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 5 1.6mm (0.063 in.) from case for 10s Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4.0 4.5 V VDS=VGS,ID=1.72mA - 10 5 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.063 0.164 0.070 - Ω VGS=10V,ID=20.6A,Tj=25°C VGS=10V,ID=20.6A,Tj=150°C Gate resistance RG - 1 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 4750 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 190 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 150 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 703 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 21 - ns VDD=400V,VGS=13V,ID=25.8A, RG=1.7Ω;seetable9 Rise time tr - 14 - ns VDD=400V,VGS=13V,ID=25.8A, RG=1.7Ω;seetable9 Turn-off delay time td(off) - 62 - ns VDD=400V,VGS=13V,ID=25.8A, RG=1.7Ω;seetable9 Fall time tf - 4 - ns VDD=400V,VGS=13V,ID=25.8A, RG=1.7Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 30 - nC VDD=400V,ID=25.8A,VGS=0to10V Gate to drain charge Qgd - 35 - nC VDD=400V,ID=25.8A,VGS=0to10V Gate charge total Qg - 100 - nC VDD=400V,ID=25.8A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=25.8A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 6 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=25.8A,Tj=25°C 520 - ns VR=400V,IF=25.8A,diF/dt=100A/µs; see table 8 - 12 - µC VR=400V,IF=25.8A,diF/dt=100A/µs; see table 8 - 44 - A VR=400V,IF=25.8A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 103 400 1 µs 350 102 10 µs 100 µs 300 101 1 ms 10 ms ID[A] Ptot[W] 250 200 150 100 DC 10-1 100 10-2 50 0 0 25 50 75 100 125 10-3 150 100 101 102 TC[°C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 102 10 µs 0.5 100 µs 101 10-1 ID[A] 10 ms 0 10 DC 10-1 0.2 0.1 ZthJC[K/W] 1 ms 0.05 0.02 10-2 0.01 single pulse 10-2 10-3 100 101 102 103 10-3 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 160 20 V 150 10 V 140 130 120 8V 110 90 80 ID[A] ID[A] 100 7V 70 60 50 40 30 6V 20 5.5 V 10 0 4.5 V 0 5 5V 10 15 20 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 20 V 10 V 8V 7V 6V 5.5 V 5V 4.5 V 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.50 0.20 0.45 0.40 0.15 0.30 5.5 V 6V RDS(on)[Ω] RDS(on)[Ω] 0.35 7V 6.5 V 0.25 10 V 0.20 typ 98% 0.05 20 V 0.15 0.10 0.10 0 10 20 30 40 50 60 70 80 0.00 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=20.6A;VGS=10V 9 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 160 10 25 °C 9 140 8 120 V 120 480 V 7 6 80 VGS[V] ID[A] 100 150 °C 5 4 60 3 40 2 20 0 1 0 2 4 6 8 10 12 0 14 0 10 20 30 40 VGS[V] 50 60 70 80 90 100 110 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=25.8Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 1200 1100 1000 900 101 IF[A] 125 °C EAS[mJ] 800 25 °C 100 700 600 500 400 300 200 100 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=9.3A;VDD=50V 10 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 700 Ciss 680 660 103 620 C[pF] VBR(DSS)[V] 640 600 Coss 102 580 101 560 Crss 540 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 17 16 15 14 13 12 Eoss[µJ] 11 10 9 8 7 6 5 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 7PackageOutlines Figure1OutlinePG-TO247-4 Final Data Sheet 13 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 8AppendixA Table11RelatedLinks • IFXCoolMOSTMP6Webpage:www.infineon.com • IFXCoolMOSTMP6applicationnote:www.infineon.com • IFXCoolMOSTMP6simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R070P6 RevisionHistory IPZ60R070P6 Revision:2015-07-13,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-07-13 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2015-07-13