IPS60R2K1CE Data Sheet (876 KB, EN)

IPS60R2K1CE
MOSFET
600VCoolMOSªCEPowerTransistor
IPAKSL
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
tab
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Drain
Pin 2, Tab
Gate
Pin 1
Applications
Source
Pin 3
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
2100
mΩ
Id.
3.7
A
Qg.typ
6.7
nC
ID,pulse
6
A
Eoss@400V
0.76
µJ
Type/OrderingCode
Package
IPS60R2K1CE
PG-TO 251
Final Data Sheet
Marking
60S2K1CE
1
RelatedLinks
see Appendix A
Rev.2.0,2016-02-26
600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.0,2016-02-26
600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
3.7
2.4
A
TC=25°C
TC=100°C
-
6
A
TC=25°C
-
-
11
mJ
ID=0.4A; VDD=50V; see table 11
EAR
-
-
0.06
mJ
ID=0.4A; VDD=50V; see table 11
Avalanche current, repetitive
IAR
-
-
0.4
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
TO-251
Ptot
-
-
38
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
2.7
A
TC=25°C
Diode pulse current
IS,pulse
-
-
6
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Maximum diode commutation speed
dif/dt
-
-
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
2Thermalcharacteristics
Table3ThermalcharacteristicsTO-251
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
3.26
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Tsold
1.6mm (0.063 in.) from case for 10s
1)
Limited by Tj max. Maximum duty cycle D=0.50
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
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600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=0.25mA
3.0
3.5
V
VDS=VGS,ID=0.06mA
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.80
4.68
2.10
-
Ω
VGS=10V,ID=0.76A,Tj=25°C
VGS=10V,ID=0.76A,Tj=150°C
Gate resistance
RG
-
12
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
2.5
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
140
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
12
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1)
Co(er)
-
8.5
-
pF
VGS=0V,VDS=0...480V
Effective output capacitance,
time related2)
Co(tr)
-
30
-
pF
ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time
td(on)
-
7
-
ns
VDD=400V,VGS=10V,ID=0.9A,
RG=12.2Ω;seetable10
Rise time
tr
-
7
-
ns
VDD=400V,VGS=10V,ID=0.9A,
RG=12.2Ω;seetable10
Turn-off delay time
td(off)
-
30
-
ns
VDD=400V,VGS=10V,ID=0.9A,
RG=12.2Ω;seetable10
Fall time
tf
-
50
-
ns
VDD=400V,VGS=10V,ID=0.9A,
RG=12.2Ω;seetable10
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
0.8
-
nC
VDD=480V,ID=0.9A,VGS=0to10V
Gate to drain charge
Qgd
-
3.6
-
nC
VDD=480V,ID=0.9A,VGS=0to10V
Gate charge total
Qg
-
6.7
-
nC
VDD=480V,ID=0.9A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=480V,ID=0.9A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)
Final Data Sheet
4
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600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=0.9A,Tj=25°C
180
-
ns
VR=400V,IF=0.9A,diF/dt=100A/µs;
see table 9
-
0.67
-
µC
VR=400V,IF=0.9A,diF/dt=100A/µs;
see table 9
-
7.1
-
A
VR=400V,IF=0.9A,diF/dt=100A/µs;
see table 9
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
5
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600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
Diagram2:Safeoperatingarea(NonFullPAK)
101
40
1 µs
35
10 µs
100 µs
100
30
1 ms
DC
ID[A]
Ptot[W]
25
20
10-1
15
10-2
10
5
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea(NonFullPAK)
Diagram4:Max.transientthermalimpedance(NonFullPAK)
1
101
10
1 µs
10 µs
0.5
100 µs
100
1 ms
100
10-1
0.1
0.05
0.02
ZthJC[K/W]
ID[A]
DC
0.2
0.01
single pulse
10-1
10-2
10-3
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
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600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
6
4.0
20 V
20 V
10 V
3.5
10 V
5
8V
8V
3.0
7V
4
7V
ID[A]
ID[A]
2.5
3
2.0
6V
1.5
5.5 V
5.5 V
1.0
5V
5V
0.5
6V
2
1
4.5 V
4.5 V
0
0
5
10
15
0.0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
10
6
9
5
8
5V
5.5V
6V
6.5V
4
7V
6
5
RDS(on)[Ω]
RDS(on)[Ω]
7
10 V
4
3
typ
98%
2
3
1
2
1
0
1
2
3
4
0
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=0.76A;VGS=10V
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600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
6
10
25 °C
9
5
8
120 V
7
4
480 V
VGS[V]
ID[A]
6
150 °C
3
5
4
2
3
2
1
1
0
0
2
4
6
8
10
0
12
0
1
2
VGS[V]
3
4
5
6
7
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=0.9Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
12
25 °C
125 °C
11
10
9
101
IF[A]
EAS[mJ]
8
100
7
6
5
4
3
2
1
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=0.4A;VDD=50V
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Rev.2.0,2016-02-26
600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
700
680
660
103
Ciss
620
C[pF]
VBR(DSS)[V]
640
600
102
580
Coss
101
560
540
Crss
520
-75
-50
-25
0
25
50
75
100
125
150
175
10
0
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
1.20
1.10
1.00
0.90
Eoss[µJ]
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
9
Rev.2.0,2016-02-26
600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
10
ID
VDS
Rev.2.0,2016-02-26
600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
6PackageOutlines
DOCUMENT NO.
Z8B00003329
DIM
A
A1
b
b2
b4
c
c2
D
D1
E
E1
e
e1
N
L
L1
L2
MILLIMETERS
MIN
MAX
2.18
2.40
0.80
1.14
0.64
0.89
0.65
1.15
4.95
5.50
0.46
0.59
0.46
0.89
5.97
6.22
5.04
5.55
6.35
6.73
4.60
5.21
2.29
4.57
3
3.00
3.60
0.80
1.25
0.88
1.28
INCHES
MIN
0.086
0.031
0.025
0.026
0.195
0.018
0.018
0.235
0.198
0.250
0.181
MAX
0.094
0.045
0.035
0.045
0.217
0.023
0.035
0.245
0.219
0.265
0.205
0.090
0.180
3
0.118
0.031
0.035
SCALE
0
2.0
0
2.0
4mm
EUROPEAN PROJECTION
ISSUE DATE
21-10-2015
0.142
0.049
0.050
REVISION
06
Figure1OutlinePG-TO251,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2016-02-26
600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
7AppendixA
Table11RelatedLinks
• IFXCoolMOSTMCEWebpage:www.infineon.com
• IFXCoolMOSTMCEapplicationnote:www.infineon.com
• IFXCoolMOSTMCEsimulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
12
Rev.2.0,2016-02-26
600VCoolMOSªCEPowerTransistor
IPS60R2K1CE
RevisionHistory
IPS60R2K1CE
Revision:2016-02-26,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-02-26
Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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©2016InfineonTechnologiesAG
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
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Final Data Sheet
13
Rev.2.0,2016-02-26