SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS(on),max 0.22 W ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge PG-TO220-3-31 • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified for industrial grade applications according to JEDEC0) • Pb-free lead plating; RoHS compliant Type Package Ordering Code Marking SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions 1) Continuous drain current ID Value T C=25 °C 20.7 T C=100 °C 13.1 Pulsed drain current2) I D,pulse T C=25 °C 52 Avalanche energy, single pulse E AS I D=10 A, V DD=50 V 690 Avalanche energy, repetitive t AR2),3) E AR I D=20 A, V DD=50 V 1 Avalanche current, repetitive t AR2),3) I AR Drain source voltage slope dv /dt Reverse diode dv /dt dv /dt Maximum diode commutation speed di /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Rev. 1.4 Unit A mJ 20 A 80 V/ns 40 V/ns 900 A/µs static ±20 V AC (f >1 Hz) ±30 T C=25 °C 35 W -55 ... +150 °C I D=20.7 A, V DS=480 V, T j=125 °C I S=20.7 A, V DS=480 V, T j=125 °C page 1 2012-02-19 SPA20N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 3.6 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wave soldering T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=20 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=1000µA 3 4 5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 2.1 - V DS=600 V, V GS=0 V, T j=150 °C - 1700 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=13.1 A, T j=25 °C - 0.19 0.22 W V GS=10 V, I D=13.1 A, T j=150 °C - 0.43 - Gate resistance RG f =1 MHz, open drain - 0.54 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=13.1 A - 17.5 - Rev. 1.4 page 2 S 2012-02-19 SPA20N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - 2400 - - 780 - - 50 - - 83 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy C o(er) related4) V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related5) C o(tr) - 160 - Turn-on delay time t d(on) - 12 - Rise time tr - 15 - Turn-off delay time t d(off) - 59 - Fall time tf - 6.4 - Gate to source charge Q gs - 15 - Gate to drain charge Q gd - 54 - Gate charge total Qg - 95 124 Gate plateau voltage V plateau - 7.0 - V DD=380 V, V GS=10 V, I D=20.7 A, R G=3.6 W ns Gate Charge Characteristics V DD=480 V, I D=20.7 A, V GS=0 to 10 V nC V 0) J-STD20 and JESD22 1) Limited only by maximum temperature. 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.4 page 3 2012-02-19 SPA20N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 20.7 - - 52 - 1.0 1.2 V - 150 - ns - 1 - µC - 13 - A Reverse Diode Diode continuous forward current1) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm A T C=25 °C V GS=0 V, I F=20.7 A, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol typ. Rth1 0.00862 Rth2 Value Unit typ. K/W Cth1 0.000205 0.0471 Cth2 0.00198 Rth3 0.119 Cth3 0.0068 Rth4 0.476 Cth4 0.0482 Rth5 1.57 Cth5 0.957 Cth6 0.1 Ws/K 5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Rev. 1.4 page 4 2012-02-19 SPA20N60CFD 1 Power dissipation 2 Safe operating area P TOT=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 40 limited by on-state resistance limited by on-state resistance 1 µs 30 10 µs 100 µs ID [A] Ptot [W] 101 20 1 ms 100 10 ms 10 DC 10-1 0 0 40 80 120 160 100 101 102 TC [°C] 103 VDS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z thJC =f(tP) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 101 60 10 V 50 8V 0.5 100 ZthJC [K/W] 40 7.5 V ID [A] 0.2 0.1 0.05 30 0.02 10-1 7V 20 0.01 single pulse 6.5 V 10 6V 5.5 V 5V 10-2 0 10-5 10-4 10-3 10-2 10-1 100 101 tp [s] Rev. 1.4 0 5 10 15 20 25 VDS [V] page 5 2012-02-19 SPA20N60CFD 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); Tj=150°C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 40 1.5 20 V 1.2 7.5 V 30 20 RDS(on) [W] ID [A] 7V 6.5 V 0.9 4.5 V 5V 5.5 V 6.5 V 6V 7V 7.5 V 20 V 0.6 6V 10 0.3 5.5 V 5V 4.5 V 0 0 0 4 8 12 16 20 24 0 5 10 15 VDS [V] 20 25 30 35 ID [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=13.1 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.6 70 0.5 60 25 °C 40 ID [A] RDS(on) [W] 50 0.4 0.3 150 °C 30 0.2 20 0.1 10 0 -60 -20 20 60 Tj [°C] 100 140 180 0 0 4 8 12 16 20 VGS [V] Rev. 1.4 page 6 2012-02-19 SPA20N60CFD 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=20.7 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 15 25°C, 98% 120 V 480 V 101 150 °C IF [A] VGS [V] 10 150°C 98% 25 °C 5 10-1 0 0 50 100 0 150 0.5 1 1.5 2 140 180 VSD [V] Qgate [nC] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=10 A; V DD=50 V parameter: T j(start) 750 20 600 15 EAS [mJ] IAV [A] 450 10 25 °C 125 °C 300 5 150 0 10-3 0 10-2 10-1 100 101 102 103 104 60 100 Tj [°C] tAR [µs] Rev. 1.4 20 page 7 2012-02-19 SPA20N60CFD 13 Drain-source breakdown voltage 14 Typ. capacitances V BR(DSS)=f(Tj );I D=10mA C =f(V DS); V GS=0 V; f =1 MHz 105 700 104 660 103 C [pF] VBR(DSS) [V] Ciss 620 102 Coss 580 Crss 101 100 540 -60 -20 20 60 100 140 0 180 100 200 Tj [°C] 300 400 500 VDS [V] 15 Typ. C oss stored energy 16 Typ. reverse recovery charge E oss= f(V DS) Q rr=f(T j); I S=20.7 A 14 1.8 12 1.6 8 Qrr [µC] Eoss [µJ] 10 6 1.4 4 1.2 2 0 1 0 200 400 600 VDS [V] Rev. 1.4 25 50 75 100 125 Tj [°C] page 8 2012-02-19 SPA20N60CFD 17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Qrr = f(I S); di /dt =100A/µs Q rr=f(di /dt ); I D =20.7 A parameter: T j parameter: T j 2 3.5 3 1.5 125 °C 125 °C Qrr [µC] Qrr [µC] 2.5 1 25 °C 2 0.5 25 °C 1.5 0 1 2 4 6 8 10 12 14 16 18 20 IS [A] Rev. 1.4 100 300 500 700 900 di/dt [A/µs] page 9 2012-02-19 SPA20N60CFD Definition of diode switching characteristics Rev. 1.4 page 10 2012-02-19 SPA20N60CFD PG-TO220-3-31: Outline Dimensions in mm Rev. 1.4 page 11 2012-02-19 SPA20N60CFD Published by Infineon Technologies AG D-81726 München, Germany © Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.4 page 12 2012-02-19