INFINEON SPW47N60CFD

SPW47N60CFD
CoolMOS
TM
Power Transistor
Product Summary
Features
V DS
• New revolutionary high voltage technology
600
0.083 Ω
R DS(on),max
• Intrinsic fast-recovery body diode
V
ID
46
A
• Extremely low reverse recovery charge
• Ultra low gate charge
PG-TO247
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Type
Package
Ordering Code
Marking
SPW47N60CFD
PG-TO247
Q67045A5051
47N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
46
T C=100 °C
29
Pulsed drain current1)
I D,pulse
T C=25 °C
115
Avalanche energy, single pulse
E AS
I D=10 A, V DD=50 V
1800
Avalanche energy, repetitive t AR2),3)
E AR
I D=20 A, V DD=50 V
1
Avalanche current, repetitive t AR2),3)
I AR
Drain source voltage slope
dv /dt
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed
Gate source voltage
A
mJ
20
A
80
V/ns
40
V/ns
di /dt
I S=46 A, V DS=480 V,
T j=125 °C
600
A/µs
V GS
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
417
W
-55 ... 150
°C
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Rev. 1.2
I D=46 A, V DS=480 V,
T j=125 °C
Unit
page 1
2005-06-28
SPW47N60CFD
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.3
leaded
-
-
62
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
600
-
-
V
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
Soldering temperature, wave solderingT sold
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Avalanche breakdown voltage
V (BR)DS
V GS=0 V, I D=46 A
-
700
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=2.9 mA
3
4
5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
6
-
V DS=600 V, V GS=0 V,
T j=150 °C
-
5000
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=29 A,
T j=25 °C
-
0.07
0.083
Ω
V GS=10 V, I D=29 A,
T j=150 °C
-
0.15
-
Gate resistance
RG
f =1 MHz, open drain
-
0.62
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=29 A
-
30
-
Rev. 1.2
page 2
S
2005-06-28
SPW47N60CFD
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
7700
-
-
2200
-
-
77
-
-
245
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
Effective output capacitance, energy
related4)
C o(er)
Effective output capacitance, time
related5)
C o(tr)
-
453
-
Turn-on delay time
t d(on)
-
30
-
Rise time
tr
-
30
-
Turn-off delay time
t d(off)
-
100
-
Fall time
tf
-
15
-
Gate to source charge
Q gs
-
54
-
Gate to drain charge
Q gd
-
130
-
Gate charge total
Qg
-
248
322
Gate plateau voltage
V plateau
-
7.1
-
V GS=0 V, V DS=25 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=46 A,
R G=3.3 Ω
ns
Gate Charge Characteristics
V DD=480 V, I D=46 A,
V GS=0 to 10 V
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 1.2
page 3
nC
V
2005-06-28
SPW47N60CFD
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
46
-
-
115
-
1.0
1.2
V
-
210
-
ns
-
2
-
µC
-
18
-
A
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
T C=25 °C
V GS=0 V, I F=46 A,
T j=25 °C
V R=480 V, I F=I S,
di F/dt =100 A/µs
A
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
typ.
R th1
0.00289
R th2
Value
Unit
typ.
K/W
C th1
0.000564
0.00399
C th2
0.0034
R th3
0.0224
C th3
0.0048
R th4
0.0421
C th4
0.0273
R th5
0.0619
C th5
0.149
C th6
4.45)
Ws/K
5)
C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
R thCA=0 K/W.
Rev. 1.2
page 4
2005-06-28
SPW47N60CFD
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
500
103
limited by on-state
resistance
400
10
2
10 µs
1 µs
100 µs
I D [A]
P tot [W]
300
1 ms
101
DC
10 ms
200
100
100
10-1
0
0
40
80
120
100
160
101
102
103
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
100
120
20 V
10 V
8V
105
0.5
90
10-1
75
I D [A]
Z thJC [K/W]
0.2
0.1
60
7V
0.05
45
10-2
0.02
0.01
6.5 V
30
single pulse
6V
15
5.5 V
10
-3
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t p [s]
Rev. 1.2
5V
0
-6
0
5
10
15
20
V DS [V]
page 5
2005-06-28
SPW47N60CFD
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
100
0.3
10 V
20 V
90
0.25
80
8V
70
I D [A]
60
R DS(on) [Ω]
0.2
7V
50
40
5.5 V
5V
6.5 V
6V
7V
0.15
20 V
6.5 V
0.1
30
6V
20
0.05
5.5 V
10
5V
0
0
0
5
10
15
20
0
10
20
V DS [V]
30
40
50
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=30 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
0.2
200
160
25 °C
120
0.1
I D [A]
R DS(on) [Ω]
0.15
98 %
150 °C
80
typ
0.05
40
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.2
0
2
4
6
8
10
V GS [V]
page 6
2005-06-28
SPW47N60CFD
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=47 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
103
12
120 V
10
25 °C, 98%
480 V
102
150 °C, 98%
8
25 °C
I F [A]
V GS [V]
150 °C
6
101
4
100
2
10-1
0
0
50
100
150
200
250
0
300
0.5
Q gate [nC]
1
1.5
2
140
180
V SD [V]
11 Avalanche SOA
12 Avalanche energy
I AR=f(t AR)
E AS=f(T j); I D=10 A; V DD=50 V
parameter: T j(start)
2000
20
1600
15
1200
I AV [A]
E AS [mJ]
25
10
5
400
0
10-3
0
10-2
10-1
100
101
102
103
t AR [µs]
Rev. 1.2
800
25 °C
125 °C
20
60
100
T j [°C]
page 7
2005-06-28
SPW47N60CFD
14 Typ. capacitances
V BR(DSS)=f(T j); I D=15 mA
C =f(V DS); V GS=0 V; f =1 MHz
700
105
660
104
C [pF]
V BR(DSS) [V]
13 Drain-source breakdown voltage
620
Ciss
103
Coss
102
580
Crss
101
540
-60
-20
20
60
100
140
0
180
100
T j [°C]
200
300
16 Typ. reverse recovery charge
E oss= f(V DS)
Q rr=f(T j); I S=47 A; di /dt =100 A/µs
500
50
4
40
3.5
30
3
Q rr [µC]
E oss [µJ]
15 Typ. C oss stored energy
20
2.5
10
2
0
1.5
0
100
200
300
400
500
600
V DS [V]
Rev. 1.2
400
V DS [V]
25
50
75
100
125
T j [°C]
page 8
2005-06-28
SPW47N60CFD
17 Typ. reverse recovery charge
18 Typ. reverse recovery charge
Q rr=f(I S); di/ dt =100 A/µs
Q rr=f(di /dt ); I S=47 A
parameter: T j
parameter: T j
4
8
3.5
7
3
6
125 °C
125 °C
5
Q rr [µC]
Q rr [µC]
2.5
2
25 °C
1.5
4
3
1
2
0.5
1
0
0
0
10
20
30
40
50
I S [A]
Rev. 1.2
25 °C
0
300
600
900
di/ dt [A/µs]
page 9
2005-06-28
SPW47N60CFD
Definition of diode switching characteristics
Rev. 1.2
page 10
2005-06-28
SPW47N60CFD
PG-TO-247-3-1
Rev. 1.2
page 11
2005-06-28
SPW47N60CFD
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.2
page 12
2005-06-28