JFET VHF/UHF Amplifiers

ON Semiconductor
BF245A
BF245B
JFET VHF/UHF Amplifiers
N–Channel — Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
±30
Vdc
Drain–Gate Voltage
VDG
30
Vdc
Gate–Source Voltage
VGS
30
Vdc
Drain Current
ID
Forward Gate Current
100
mAdc
IG(f)
10
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Storage Channel Temperature Range
Tstg
–65 to +150
°C
3 DRAIN
1
2
3 DRAIN
1
2
2
GATE
STYLE 22
STYLE 23
3
BF245, BF245A,
BF245B, BF245C
CASE 29–11, STYLE 23
TO–92 (TO–226AA)
1
GATE
1 SOURCE
3
BF244A, BF244B
CASE 29–11, STYLE 22
TO–92 (TO–226AA)
2 SOURCE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
30
—
—
Vdc
0.4
0.4
1.6
3.2
—
—
—
—
7.5
2.2
3.8
7.5
VGS(off)
–0.5
—
–8.0
Vdc
IGSS
—
—
5.0
nAdc
2.0
2.0
6.0
12
—
—
—
—
25
6.5
15
25
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
Gate–Source
(VDS = 15 Vdc, ID = 200 µAdc)
VGS
BF245(1)
BF245A, BF244A(2)
BF245B, BF244B
BF245C
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
IDSS
BF245(1)
BF245A, BF244A(2)
BF245B, BF244B
BF245C
mAdc
1. On orders against the BF245, any or all subgroups might be shipped.
2. On orders against the BF244A, any or all subgroups might be shipped.
 Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
Publication Order Number:
BF245A/D
BF245A BF245B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Yfs
3.0
—
6.5
mmhos
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Yos
—
40
—
mhos
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 200 MHz)
Yfs
—
5.6
—
mmhos
Reverse Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 200 MHz)
Yrs
—
1.0
—
mmhos
(VDS = 20 Vdc, –VGS = 1.0 Vdc)
Ciss
—
3.0
—
pF
Reverse Transfer Capacitance
(VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz)
Crss
—
0.7
—
pF
Output Capacitance
(VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz)
Coss
—
0.9
—
pF
(VDS = 15 Vdc, VGS = 0)
F(Yfs)
—
700
—
MHz
Input Capacitance
Cut–off Frequency(3)
3. The frequency at which gfs is 0.7 of its value at 1 kHz.
COMMON SOURCE CHARACTERISTICS
30
20
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
10
bis @ 0.25 IDSS
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)
bis, INPUT SUSCEPTANCE (mmhos)
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
grs @ IDSS, 0.25 IDSS
10
20
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
10
7.0
5.0
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
30
Figure 2. Reverse Transfer Admittance (yrs)
|bfs| @ IDSS
30
50 70 100
200 300
f, FREQUENCY (MHz)
5.0
bos @ IDSS and 0.25 IDSS
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
|bfs| @ 0.25 IDSS
20
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)
Figure 1. Input Admittance (yis)
20
gos @ 0.25 IDSS
0.02
500 700 1000
0.01
10
Figure 3. Forward Transadmittance (yfs)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 7001000
Figure 4. Output Admittance (yos)
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2
BF245A BF245B
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
1.0
40°
350°
100
340°
400
300
0.8
320°
40°
310°
50°
20°
10°
0°
350°
340°
330°
0.4
300
200
0.9
30°
32
200
100
50°
330°
ID = 0.25 IDSS
ID = IDSS
0.3
ID = IDSS, 0.25 IDSS
500
31
900
800
0.2
300°
60°
290°
70°
280°
80°
270°
90°
100°
260°
100°
26
110°
250°
110°
25
120°
240°
120°
24
130°
230°
130°
23
140°
220°
140°
22
60°
400
500
0.7
70°
600
80°
0.6
90°
900
150°
160°
170°
180°
800
190°
700
800
700
900
200°
600
600
210°
20°
10°
0°
350°
340°
300
0.5
900
70°
80°
90°
100°
110°
120°
800
700
600
500
0.4
900
800
700
600
500
0.3
100
400
400
0.3
ID = 0.25 IDSS
300
200
0.4
100
0.5
300
ID = IDSS
200
28
0.0
200
27
100
150°
330°
0.6
60°
29
160°
170°
180°
190°
200°
210°
Figure 6. S12s
40°
50°
0.1
500
400
Figure 5. S11s
30°
30
700
130°
30°
20°
10°
0°
350°
340°
330°
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
320°
40°
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
27
260°
100°
26
250°
110°
25
240°
120°
24
230°
130°
23
220°
140°
22
0.7
32
31
30
29
28
0.6
0.6
140°
150°
160°
170°
180°
190°
200°
210°
150°
Figure 7. S21s
160°
170°
180°
190°
Figure 8. S22s
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3
200°
210°
BF245A BF245B
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
10
7.0
5.0
grg , REVERSE TRANSADMITTANCE (mmhos)
brg , REVERSE SUSCEPTANCE (mmhos)
gig, INPUT CONDUCTANCE (mmhos)
big, INPUT SUSCEPTANCE (mmhos)
20
gig @ IDSS
3.0
grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
big @ IDSS
0.3
0.2
10
20
30
big @ 0.25 IDSS
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
0.5
0.3
brg @ IDSS
0.2
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
gig @ IDSS, 0.25 IDSS
10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
0.1
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 10. Reverse Transfer Admittance (yrg)
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)
bfg , FORWARD SUSCEPTANCE (mmhos)
Figure 9. Input Admittance (yig)
20
500 700 1000
1.0
0.7
0.5
bog @ IDSS, 0.25 IDSS
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
0.01
gog @ 0.25 IDSS
10
Figure 11. Forward Transfer Admittance (yfg)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 12. Output Admittance (yog)
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4
BF245A BF245B
COMMON GATE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
350°
340°
0.7
40°
100
100
200
200
0.5
300
300
60°
ID = IDSS
0.4
70°
400
700
400
500
310°
50°
300°
60°
290°
70°
280°
80°
600
900
260°
100°
110°
250°
110°
120°
240°
120°
130°
230°
130°
140°
30°
20°
180°
190°
0°
350°
100
600
ID = IDSS
700
600
700
800
29
28
0.0
27
26
ID = 0.25 IDSS
25
0.01
24
0.02
23
900
0.03
22
0.04
210°
150°
160°
340°
330°
30°
20°
170°
180°
190°
200°
210°
340°
330°
Figure 14. S12g
10°
40°
320°
0°
1.5
1.0
100
100
0.4
30
500
800
200°
0.5
40°
32
0.01
Figure 13. S11g
10°
330°
0.02
140°
220°
170°
340°
31
900
160°
350°
0.04
90°
270°
100°
150°
0°
800
900
90°
40°
10°
600
800
0.3
320°
20°
0.03
500
700
80°
30°
ID = 0.25 IDSS
0.6
50°
330°
ID = IDSS
350°
300
200
400
500
600
800
0.9
32
700
900
31
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
27
260°
100°
26
110°
250°
110°
25
120°
240°
120°
24
130°
230°
130°
23
140°
220°
140°
22
50°
100
0.3
60°
0.2
70°
80°
ID = 0.25 IDSS
0.1
900
90°
900
100°
150°
160°
170°
180°
190°
200°
210°
ID = IDSS, 0.25 IDSS
0.8
30
0.7
29
28
0.6
150°
160°
170°
180°
190°
Figure 16. S22g
Figure 15. S21g
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5
200°
210°
BF245A BF245B
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
STYLE 23:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
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6
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
BF245A BF245B
Notes
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7
BF245A BF245B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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8
BF245A/D