ON Semiconductor BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID Forward Gate Current 100 mAdc IG(f) 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Storage Channel Temperature Range Tstg –65 to +150 °C 3 DRAIN 1 2 3 DRAIN 1 2 2 GATE STYLE 22 STYLE 23 3 BF245, BF245A, BF245B, BF245C CASE 29–11, STYLE 23 TO–92 (TO–226AA) 1 GATE 1 SOURCE 3 BF244A, BF244B CASE 29–11, STYLE 22 TO–92 (TO–226AA) 2 SOURCE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 30 — — Vdc 0.4 0.4 1.6 3.2 — — — — 7.5 2.2 3.8 7.5 VGS(off) –0.5 — –8.0 Vdc IGSS — — 5.0 nAdc 2.0 2.0 6.0 12 — — — — 25 6.5 15 25 OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate–Source (VDS = 15 Vdc, ID = 200 µAdc) VGS BF245(1) BF245A, BF244A(2) BF245B, BF244B BF245C Gate–Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) Vdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS BF245(1) BF245A, BF244A(2) BF245B, BF244B BF245C mAdc 1. On orders against the BF245, any or all subgroups might be shipped. 2. On orders against the BF244A, any or all subgroups might be shipped. Semiconductor Components Industries, LLC, 2001 June, 2001 – Rev. 0 1 Publication Order Number: BF245A/D BF245A BF245B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit SMALL–SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yfs 3.0 — 6.5 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Yos — 40 — mhos Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yfs — 5.6 — mmhos Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 200 MHz) Yrs — 1.0 — mmhos (VDS = 20 Vdc, –VGS = 1.0 Vdc) Ciss — 3.0 — pF Reverse Transfer Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) Crss — 0.7 — pF Output Capacitance (VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz) Coss — 0.9 — pF (VDS = 15 Vdc, VGS = 0) F(Yfs) — 700 — MHz Input Capacitance Cut–off Frequency(3) 3. The frequency at which gfs is 0.7 of its value at 1 kHz. COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C) 500 700 1000 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 10 7.0 5.0 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 30 Figure 2. Reverse Transfer Admittance (yrs) |bfs| @ IDSS 30 50 70 100 200 300 f, FREQUENCY (MHz) 5.0 bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 |bfs| @ 0.25 IDSS 20 gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 gos @ 0.25 IDSS 0.02 500 700 1000 0.01 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 7001000 Figure 4. Output Admittance (yos) http://onsemi.com 2 BF245A BF245B COMMON SOURCE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 1.0 40° 350° 100 340° 400 300 0.8 320° 40° 310° 50° 20° 10° 0° 350° 340° 330° 0.4 300 200 0.9 30° 32 200 100 50° 330° ID = 0.25 IDSS ID = IDSS 0.3 ID = IDSS, 0.25 IDSS 500 31 900 800 0.2 300° 60° 290° 70° 280° 80° 270° 90° 100° 260° 100° 26 110° 250° 110° 25 120° 240° 120° 24 130° 230° 130° 23 140° 220° 140° 22 60° 400 500 0.7 70° 600 80° 0.6 90° 900 150° 160° 170° 180° 800 190° 700 800 700 900 200° 600 600 210° 20° 10° 0° 350° 340° 300 0.5 900 70° 80° 90° 100° 110° 120° 800 700 600 500 0.4 900 800 700 600 500 0.3 100 400 400 0.3 ID = 0.25 IDSS 300 200 0.4 100 0.5 300 ID = IDSS 200 28 0.0 200 27 100 150° 330° 0.6 60° 29 160° 170° 180° 190° 200° 210° Figure 6. S12s 40° 50° 0.1 500 400 Figure 5. S11s 30° 30 700 130° 30° 20° 10° 0° 350° 340° 330° 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320° 40° 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 27 260° 100° 26 250° 110° 25 240° 120° 24 230° 130° 23 220° 140° 22 0.7 32 31 30 29 28 0.6 0.6 140° 150° 160° 170° 180° 190° 200° 210° 150° Figure 7. S21s 160° 170° 180° 190° Figure 8. S22s http://onsemi.com 3 200° 210° BF245A BF245B COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS 0.3 0.2 10 20 30 big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.5 0.3 brg @ IDSS 0.2 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 0.1 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 0.01 gog @ 0.25 IDSS 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 4 BF245A BF245B COMMON GATE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 350° 340° 0.7 40° 100 100 200 200 0.5 300 300 60° ID = IDSS 0.4 70° 400 700 400 500 310° 50° 300° 60° 290° 70° 280° 80° 600 900 260° 100° 110° 250° 110° 120° 240° 120° 130° 230° 130° 140° 30° 20° 180° 190° 0° 350° 100 600 ID = IDSS 700 600 700 800 29 28 0.0 27 26 ID = 0.25 IDSS 25 0.01 24 0.02 23 900 0.03 22 0.04 210° 150° 160° 340° 330° 30° 20° 170° 180° 190° 200° 210° 340° 330° Figure 14. S12g 10° 40° 320° 0° 1.5 1.0 100 100 0.4 30 500 800 200° 0.5 40° 32 0.01 Figure 13. S11g 10° 330° 0.02 140° 220° 170° 340° 31 900 160° 350° 0.04 90° 270° 100° 150° 0° 800 900 90° 40° 10° 600 800 0.3 320° 20° 0.03 500 700 80° 30° ID = 0.25 IDSS 0.6 50° 330° ID = IDSS 350° 300 200 400 500 600 800 0.9 32 700 900 31 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 27 260° 100° 26 110° 250° 110° 25 120° 240° 120° 24 130° 230° 130° 23 140° 220° 140° 22 50° 100 0.3 60° 0.2 70° 80° ID = 0.25 IDSS 0.1 900 90° 900 100° 150° 160° 170° 180° 190° 200° 210° ID = IDSS, 0.25 IDSS 0.8 30 0.7 29 28 0.6 150° 160° 170° 180° 190° Figure 16. S22g Figure 15. S21g http://onsemi.com 5 200° 210° BF245A BF245B PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN http://onsemi.com 6 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- BF245A BF245B Notes http://onsemi.com 7 BF245A BF245B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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