MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc IG 10 mAdc Symbol Max Unit Gate Current 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 SOT−23 (TO−236) CASE 318 STYLE 10 1 PD 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 2 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. M6A M G G 1 M6A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBF4416LT1 SOT−23 3,000 / Tape & Reel MMBF4416LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 3 1 Publication Order Number: MMBF4416LT1/D MMBF4416LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 30 − Vdc IGSS − − 1.0 200 nAdc VGS(off) − −6.0 Vdc VGS −1.0 −5.5 Vdc OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = 1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 150°C) Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc) Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (VGS = 15 Vdc, VGS = 0) IDSS 5.0 15 mAdc VGS(f) − 1.0 Vdc Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 4500 7500 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| − 50 mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 4.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Crss − 0.8 pF Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss − 2.0 pF Gate−Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL− SIGNAL CHARACTERISTICS COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS 30 20 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) (VDS = 15 Vdc, Tchannel = 25°C) bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 bis @ 0.25 IDSS 0.3 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 2. Reverse Transfer Admittance (yrs) 20 10 10 7.0 5.0 gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 |bfs| @ IDSS |bfs| @ 0.25 IDSS 5.0 bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 gos @ 0.25 IDSS 0.02 0.3 0.2 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 2 MMBF4416LT1 COMMON SOURCE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 1.0 40° 350° 340° 330° 320° 40° 310° 50° 20° 10° 310° 900 500 ID = IDSS 800 60° 300° 400 500 0.7 800 90° 900 290° 400 80° 280° 800 700 300° 0.1 500 70° 290° 0.2 700 600 700 600 0.6 320° ID = IDSS, 0.25 IDSS 600 80° 330° 0.4 300 70° 340° 0.3 400 50° 0.8 350° 300 200 60° 0° 200 100 0.9 30° ID = 0.25 IDSS 100 300 280° 0.0 200 270° 90° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 900 150° 160° 170° 180° 190° 200° 210° 150° 160° 170° Figure 5. S11s 30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 80° 90° 700 110° 0.4 800 600 100° 210° 0° 350° 340° 330° 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 260° 100° 260° 250° 110° 250° 240° 120° 240° 230° 130° 230° 220° 140° 220° 320° 310° 300° 0.7 290° 900 700 600 200° 40° 0.5 60° 900 190° 320° 0.6 50° 800 180° Figure 6. S12s 40° 70° 270° 100 500 0.3 ID = 0.25 IDSS 500 0.3 100 400 400 280° 0.6 300 200 0.4 100 0.5 300 120° ID = IDSS 200 130° 0.6 140° 150° 160° 170° 180° 190° 200° 210° 150° Figure 7. S21s 160° 170° 180° 190° Figure 8. S22s http://onsemi.com 3 200° 210° MMBF4416LT1 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) (VDG = 15 Vdc, Tchannel = 25°C) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 10 7.0 5.0 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS big @ 0.25 IDSS 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 gog @ 0.25 IDSS 0.1 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 4 MMBF4416LT1 COMMON GATE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 350° 340° 330° 30° 0.7 40° 100 310° 50° 300° 60° 290° 70° 280° 80° 0° 350° 340° 330° 0.04 200 300 320° 0.03 400 100 500 200 ID = IDSS 0.4 310° 600 300 0.5 60° 70° 40° 10° ID = 0.25 IDSS 0.6 50° 320° 20° 0.02 700 400 500 300° 800 600 900 0.01 290° 700 80° 800 0.3 900 90° 90° 270° 100° ID = IDSS 110° 110° 250° 270° 500 600 100° 260° 280° 0.0 100 700 600 700 260° ID = 0.25 IDSS 250° 0.01 800 120° 120° 240° 240° 800 0.02 900 130° 130° 230° 230° 900 140° 140° 220° 150° 160° 170° 180° 190° 200° 210° 20° 10° 0° 350° 150° 160° 170° 340° 330° 30° 20° 10° 40° 320° 0° 1.5 1.0 100 100 0.4 190° 350° 300 200 200° 210° 340° 330° 500 320° 400 700 600 800 0.9 ID = IDSS 50° 180° Figure 14. S12g 0.5 40° 220° 0.04 Figure 13. S11g 30° 0.03 900 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 100 ID = IDSS, 0.25 IDSS 0.3 0.8 60° 0.2 70° 310° ID = 0.25 IDSS 80° 0.1 900 90° 300° 0.7 290° 280° 0.6 900 150° 160° 170° 180° 190° 200° 210° 150° Figure 15. S21g 160° 170° 180° 190° Figure 16. S22g http://onsemi.com 5 200° 210° MMBF4416LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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