NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS(on) at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications • Load Switch • Optimized for Battery and Load Management Applications in −30 V Portable Equipment like Cell Phones, PDA’s, Media Players, etc. Symbol Value Unit Drain−to−Source Voltage VDSS −30 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C −2.2 TA = 85°C −1.5 t≤5s TA = 25°C Steady State ID 75 mW @ −10 V −2.2 A 110 mW @ −4.5 V −1.8 A 150 mW @ −2.5 V −1.0 A S G A D −3.5 0.48 TA = 25°C PD t≤5s Pulsed Drain Current ID MAX P−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter RDS(on) MAX W 1.25 3 IDM −15.0 TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS −1.0 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 260 Junction−to−Ambient − t ≤ 10 s (Note 1) RqJA 100 MARKING DIAGRAM/ PIN ASSIGNMENT 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3 Drain 1 2 SOT−23 CASE 318 STYLE 21 TRFMG G 1 Gate 2 Source TRF = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTR4171PT1G SOT−23 (Pb−Free) 3000/Tape & Reel NTR4171PT3G SOT−23 (Pb−Free) 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 May, 2010 − Rev. 1 1 Publication Order Number: NTR4171P/D NTR4171P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS /TJ ID = −250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −24 V, TJ = 25°C VGS = 0 V, VDS = −24 V, TJ = 85°C −1.0 −5.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "12 V ±0.1 mA VGS(TH) VGS = VDS, ID = −250 mA OFF CHARACTERISTICS V 24 mV/°C ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient −0.7 VGS(TH)/TJ Drain−to−Source On−Resistance −1.4 3.5 RDS(on) Forward Transconductance −1.15 gFS V mV/°C VGS = −10 V, ID = −2.2 A 50 75 VGS = −4.5 V, ID = −1.8 A 60 110 VGS = −2.5 V, ID = −1.0 A 90 150 VDS = −5.0 V, ID = −2.2 A 7.0 S 720 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = −15 V 95 65 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.6 Total Gate Charge QG(TOT) 7.4 Threshold Gate Charge QG(TH) 0.7 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.6 RG 6.1 W td(on) 8.0 ns tr 11 Gate Resistance 15.6 VGS = −10 V, VDS = −15 V, ID = −3.5 A VGS = −4.5 V, VDS = −15 V, ID = −3.5 A nC 0.7 1.6 nC 1.6 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = −10 V, VDS = −15 V, ID = −3.5 A, RG = 6 W 32 tf 14 td(on) 9.0 tr td(off) VGS = −4.5 V, VDS = −15 V, ID = −3.5 A, RG = 6 W tf ns 16 25 22 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −1.0 A, TJ = 25°C −0.8 14 VGS = 0 V, IS = −1.0 A, dISD/dt = 100 A/ms QRR http://onsemi.com 2 V ns 10 4.0 8.0 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% 4. Switching characteristics are independent of operating junction temperatures −1.2 nC NTR4171P TYPICAL CHARACTERISTICS 10 10 −4.5 V 6.0 5.0 −2.2 V 4.0 3.0 VGS = −2.0 V 2.0 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 4.0 4.5 5.0 7.0 6.0 5.0 TJ = 25°C 4.0 3.0 2.0 TJ = 125°C 1.0 1.25 1.5 TJ = −55°C 1.75 2.0 2.25 2.75 2.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.30 TJ = 25°C ID = −2.2 A 0.25 0.20 0.15 0.10 0.05 0 VDS = −5 V 8.0 1.0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 7.0 1.0 0 RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE (W) −2.5 V −10 V 8.0 9.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 3.0 0.30 −2.0 V −2.2 V TJ = 25°C 0.25 0.20 −2.5 V 0.15 0.10 −4.5 V 0.05 0 VGS = −10 V 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 −VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.6 1.5 1.4 VGS = −4.5 V ID = −2.2 A IDSS, LEAKAGE (nA) −ID, DRAIN CURRENT (A) 9.0 1.3 TJ = 150°C 1000 1.2 1.1 1.0 0.9 TJ = 125°C 100 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 10 150 0 5.0 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTR4171P VGS = 0 V TJ = 25°C f = 1 MHz Ciss 800 700 600 500 400 300 Coss 200 100 C rss 0 0 t, TIME (ns) 1000 5.0 10 15 20 25 30 −VDS −VGS 12 8.0 10 8.0 6.0 4.0 VDS = −15 V TJ = 25°C ID = −3.5 A QGD QGS 6.0 4.0 2.0 0 2.0 0 2.0 4.0 6.0 8.0 10 12 0 16 14 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 VGS = −10 V VDD = −15 V ID = −3.5 A td(off) tf tr 10 td(on) 1.0 10 TJ = 125°C 100 TJ = 150°C 1.0 TJ = 25°C 0.1 TJ = −55°C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1.5 30 1.4 ID = −250 mA 25 1.3 1.2 POWER (W) −VGS(th) (V) 14 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 1.0 16 QT 10 −IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 900 12 1.1 1.0 0.9 0.8 20 15 10 5.0 0.7 0.6 −50 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1100 1000 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS −25 0 25 50 75 100 125 0 150 0.001 0.01 0.1 1.0 10 100 TJ, TEMPERATURE (°C) SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation http://onsemi.com 4 1000 NTR4171P TYPICAL CHARACTERISTICS −ID, DRAIN CURRENT (A) 100 10 VGS = −12 V Single Pulse TC = 25°C 10 ms 100 ms 1.0 1 ms 10 ms 0.1 0.01 RDS(on) Limit Thermal Limit Package Limit 0.1 1.0 dc 10 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) Figure 13. Maximum Rated Forward Biased Safe Operating Area 1.0 Duty Cycle = 0.5 0.2 0.1 0.01 0.1 0.05 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 14. FET Thermal Response http://onsemi.com 5 10 100 1000 NTR4171P PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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