ONSEMI NTGS3130NT1G

NTGS3130N
Power MOSFET
20 V, 5.6 A Single
N-Channel, TSOP-6
Features
•Leading Edge Trench Technology for Low On Resistance
•Low Gate Charge for Fast Switching
•Small Size (3 x 2.75 mm) TSOP-6 Package
•This is a Pb-Free Device
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V(BR)DSS
Applications
Rating
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
(Note 2)
Power Dissipation
(Note 2)
Steady
State
t ≤ 10 s
TA = 25°C
Value
Unit
VDSS
20
V
TA = 85°C
±8
V
ID
4.1
A
Source 4
6.2
PD
W
MARKING DIAGRAM &
PIN ASSIGNMENT
A
Drain Drain Source
6 5 4
1.4
TA = 85°C
4.2
ID
3.0
1
0.6
W
IDM
19
A
TJ, Tstg
-55 to
150
TA = 25°C
°C
Source Current (Body Diode)
IS
1.0
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
tP ≤ 10 s
Operating and Storage Temperature Range
PD
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient - t ≤ 10 s (Note 1)
Junction-to-Ambient - Steady State (Note 2)
Symbol
Max
Unit
1 2 3
Drain Drain Gate
S9
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
*Date Code orientation may vary depending
upon manufacturing location.
110
RqJA
°C/W
90
200
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2007
S9 MG
G
TSOP-6
CASE 318G
STYLE 1
(Note: Microdot may be in either location)
Junction-to-Ambient - Steady State (Note 1)
May, 2007 - Rev. 0
4.9 A
Gate 3
1.1
TA = 25°C
TA = 25°C
Pulsed Drain Current
32 mW @ 2.5 V
5.6
t ≤ 10 s
Steady
State
5.6 A
Drain 1 2 5 6
Symbol
VGS
TA = 25°C
Steady
State
24 mW @ 4.5 V
N-Channel
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Power Dissipation
(Note 1)
ID Max
20 V
•DC-DC Converters
•Lithium Ion Battery Applications
•Load/Power Switching
Continuous Drain Current
(Note 1)
RDS(on) mAX
1
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3130NT1G
TSOP-6
(Pb-Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGS3130N/D
NTGS3130N
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V; ID = 250 mA
20
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
V
9.8
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V; VDS = 16 V,
TJ = 25°C
1.0
mA
Gate-to-Source Leakage Current
IGSS
VDS = 0, VGS = ±8 V
100
nA
VGS(TH)
VGS = VDS, ID = 250 mA
1.4
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Temperature Coefficient
VGS(TH)/TJ
Drain-to-Source On-Resistance
RDS(on)
Forward Transconductance
0.4
0.6
3.4
gFS
mV/°C
VGS = 4.5 V, ID = 5.6 A
19
24
VGS = 2.5 V, ID = 4.9 A
25
32
VDS = 10 V, ID = 5.6 A
8.2
mW
S
CHARGES, CAPACITANCE, & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V,
f = 1 MHz,
VDS = 16 V
VGS = 0 V,
f = 1 MHz,
VDS = 10 V
CRSS
935
169
104
198
110
Total Gate Charge
QG(TOT)
13.2
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
4.2
Total Gate Charge
QG(TOT)
11.8
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
VGS = 4.5 V
VDS = 16 V
ID = 5.6 A
VGS = 4.5 V
VDS = 5.0 V
ID = 6.2 A
pF
965
20.3
0.60
1.5
18.0
nC
0.6
1.4
2.7
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
td(ON)
VGS = 4.5 V,
VDD = 16 V,
ID = 1 A,
RG = 3 W
tr
td(OFF)
tf
6.3
12.6
7.3
13.5
21.7
35.1
9.7
17.6
0.7
1.2
ns
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 1.0 A
TJ = 25°C
V
20.4
VGS = 0 Vdc,
dISD/dt = 100 A/ms,
IS = 1.0 A
QRR
8.1
8.8
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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2
ns
11.6
nC
NTGS3130N
TYPICAL CHARACTERISTICS
25
VGS = 4.5 V to 2.5 V
12
8
1.5 V
4
TJ = 25°C
0
0
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
1.8 V
2.0 V
16
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
20
15
10
TJ = 25°C
5
TJ = -55°C
0.75
1.0
1.25
1.5
1.75
2.0
VGS, GATE-T O-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
ID = 5.6 A
0.08
0.06
TJ = 125°C
0.04
TJ = 25°C
0.02
0
1.5
2
2.5
3
3.5
4
4.5
5
VGS, GATE VOLTAGE (V)
2.25
0.10
TJ = 25°C
0.08
VGS = 1.8 V
0.06
VGS = 2 V
0.04
VGS = 2.5 V
0.02
VGS = 4.5 V
3V
0.00
2
4
6
8
10
12
14
16
18
20
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
0.04
1400
1200
C, CAPACITANCE (pF)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
TJ = 125°C
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
0.10
1
VDS ≥ 5 V
0
0.5
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
20
0.03
VGS = 2.5 V
0.02
VGS = 4.5 V
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
1000
800
600
400
Coss
200
0.01
-50
Crss
0
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
TJ, JUNCTION TEMPERATURE (°C)
DRAIN-T O-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
18
20
NTGS3130N
TYPICAL CHARACTERISTICS
6
VDS
14
VGS
4
12
VDS = 5 V
10
3
QGS
QGD
8
VDS = 16 V
2
6
4
1
ID = 5.6 A
TJ = 25°C
0
0
2
4
6
VGS = 0 V
16
8
10
12
2
14
IS, SOURCE CURRENT (A)
5
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
V GS, GATE-T O-SOURCE VOLTAGE (V)
10
18
QT
125°C
TJ = -55°C
0.1
0.2
0
0.3
QG, TOTAL GATE CHARGE (nC)
0.4
0.5
0.6
0.9
1.0
5
SINGLE PULSE
RqJA = 110°C/W
TA = 25°C
4
10
POWER (W)
100 ms
1 ms
1
0.01
0.8
Figure 8. Diode Forward Voltage vs. Current
100
0.1
0.7
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 7. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
ID, DRAIN CURRENT (A)
25°C
1.0
10 ms
VGS = 8 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
3
2
1
dc
0
1
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
0
100
1
10
100
1000
SINGLE PULSE TIME (s)
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
RqJA, EFFECTIVE TRANSIENT THERMAL
RESISTANCE NORMALIZED
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
Figure 11. Thermal Response
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4
1
10
100
1000
NTGS3130N
PACKAGE DIMENSIONS
TSOP-6
CASE 318G-02
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
6
5
4
2
3
E
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
q
b
e
q
c
A
0.05 (0.002)
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
-
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
-
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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NTGS3130N/D