NGTB20N60L2TF1G Application Note Comparison with Super Junction-MOSFET 1. At the beginning In full switching PFC circuit of frequency>30kHz, Super Junction MOSFET (hereinafter called SJMOSFET) which is assumed that switching loss will decrease is used. However, NGTB20N60L2TF1G, high-speed IGBT, is also a device recommendable for PFC circuit of the power supply of room airconditioners. We conducted switching characteristic comparison and PFC circuit operation comparison with the case of using SJMOSFET, and proved the competitiveness of NGTB20N60L2TF1G. www.onsemi.com 2. Specification Comparison We selected a SJ-MOSFET of which VCE(sat) is lower or equivalent to NGTB20N60L2TF1G (Table.1). As a feature, it is understood that Cies(Ciss) of SJ-MOSFET is larger than that of IGBT. Table.1 Data comparison between NGTB20N60L2TF1G and SJ-MOSFET Parameter NGTB20N60L2TF1G VCES(VDSS) [V] Ic(ID)[A] 600 40 5.6 1.45 600 30.8 3.2 1.46 600 44 3.0 1.1 2000 60 50 84 3000 70 9.5 86 4285 212 95 124 VGE/VGS(off)[V] VCE(sat)[V] Cies (Ciss )[pF] Coes(Coss)[pF] Cres(Crss)[pF] Qg[nC] © Semiconductor Components Industries, LLC, 2015 March 2015- Rev. 0 A.com (SJ-MOSFET) B.com (SJ-MOSFET) 1 Note RDS(on)*Ic (20A) Publication Order Number: ANDNGTB20N60L2TF1G_2/D NGTB20N60L2TF1G Application Note 3. Performance comparison between NGTB20N60TF1G and SJ-MOSFET Two correlation plots of tf vs. VCE(sat) (SJMOSFET: equivalent value) are shown in Fig.1. When converting RDS(on) of SJ-MOSFET into VCE(sat), the value is lower than that of NGTB20N60TF1G. However, tf tends to be high. (Test value of Ic=15A) Fig.1 tf VS VCE(sat) 4. Conduction Loss comparison For IGBT, VCE(sat) changes small with temperature change; but for MOSFET, RDS(on) changes greatly with temperature increase. We compared at Tc=25C (Fig.2) and Fig.２ Conduction loss VS Icp(IDp) Tc=25℃ In conduction loss comparison, we assume operation Ic(ID) as triangle wave as shown in Fig.4, and calculated. Fig.3 Conduction loss VS Icp(IpD) Tc=100℃ T Tc=100C (Fig.3). At Tc=100C, conduction loss of NGTB20N60L2TF1G becomes smaller than that of B com. Ton Fig.4 Waveform used for calculation Conduction loss www.onsemi.com 2 VCE Ic Eoff NGTB20N60L2TF1G Application Note 5. Switching characteristic comparison (L-load) We compared switching characteristic with L load. For NGTB20N60TF1G, tf (current cutoff direction) is faster than that of SJ-MOSFET even when changing the current value. tf VS Ic(ID) Comparison between IGBT and SJ-MOSFET 160 L load L=200μH Vcc=400V VGE=15V Rg=47Ω 140 120 tf[ns] 100 Vcc=400V L=200μH 80 60 Vout tf[ns]NGTB20N60L2 Rg tf[ns]A com 40 tf[ns] B com 20 P G 0 0 5 10 Ic(ID) [A] 15 20 Fig.4 tf VS Ic(ID) Fig.5 Test circuit 6. Full switching PFC operation comparison We conducted operation comparison test at f=35kHz in full switching PFC circuit. Test result showed the efficiency of NGTB20N60L2TF1G was higher (Table.2). Operation waveform of PFC is triangle wave or trapezoidal wave. But as switching loss, Ic(ID) at falling of cutoff is dominant. For NGTB20N60TF1G, because of its fast tf and small Eoff, it actually is advantageous in performance over SJ-MOSFET. In addition, when comparing the waveforms (WP.1 to WP.3), it is understood that tf of SJMOSFET is slow. Regarding switching loss, it is understood from VCE x Ic waveform that the loss of NGTB20N60TF1G is the smallest. Furthermore, ringing was observed in the gate voltage waveform of SJ-MOSFET, which means countermeasure against noise will become necessary. Table 2: Performance comparison Condition: Full Switching PFC circuit at VAC=100V, Iout=2A, Vout385V, f=35kHz Device NGTB20N60L2TF1G A com B com Pin[W] 816 820 825 Pout[W] 769 770 772 η[%] 94.27 93.85 93.53 VCEp[V] 443 442 427 www.onsemi.com 3 IDp[A] 11.1 11.2 11.0 tf[ns] 110 200 214 toff[ns] 342 604 887 Eoff[μJ] 252 429 486 NGTB20N60L2TF1G Application Note Ringing VGE-10V/div VGE-10V/div VCE×Ic Waveform VCE-100V/div VCE×Ic Waveform Ic-2A/div WP.1 NGTB20N60TF1G VCE-100V/div Ic-2A/div WP.2 A com VGE-10V/div VCE×Ic Waveform VCE-100V/div Ic-2A/div WP.3 B com ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . 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