Product Brief Rapid 1 and Rapid 2 Diodes

Product Brief
Ultrafast Reverse Recovery Power Silicon Diodes
Rapid Diodes – The Perfect Partner to CoolMOS™ and TRENCHSTOP™ 5
With the new 650V Rapid 1 and Rapid 2 Diode families, Infineon enters the high voltage hyperfast silicon diode market. They represent a perfect balance between cost and performance
and target high efficiency applications switching between 18kHz and 100kHz. The new diodes
are optimized to work in harmony with CoolMOS™ and TRENCHSTOP™ 5 in PFC topologies.
The Rapid 1 family is optimized with low VF and soft recovery and is perfect for applications
switching between 18kHz and 40kHz, where conduction losses and EMI emissions are critical
design parameters.
The Rapid 2 family meanwhile is designed for applications switching between 40kHz and
100kHz. In this switching range, the main loss component comes from the switching losses,
therefore the Rapid 2 has been optimized to provide low Qrr and trr. The Rapid 2 also provides
super soft recovery behavior with an S-factor >>1.
Features
„„ Temperature stable conduction losses (VF)
„„ Rapid 1 offers 250mV lower conduction
losses (VF) than best competitor
„„ Rapid 2 offers lowest Qrr: VF ratio
„„ 10% lower Irrm than best competitor
„„ High level of softness
Benefits
„„ Rapid 2 offers Best-in-Class (BiC)
efficiency for hyperfast Si diodes at 70kHz
„„ Lowest Irrm improves the Eon of the switch
Emitter Controlled Diodes
RAPID 1
RAPID 2
SiC
0Hz18kHz 40kHz100kHz
>100kHz
Trade-off VF – Qrr
in the PFC by 10%
„„ High level of softness provides
BiC EMI behavior
Applications
1000
900
800
„„ PFC Server
Comp A
„„ PFC Telecom Rectifier
Comp B
700
Qrr [nC]
„„ Room and Commercial Airconditioners
IDW30E65D1
„„ PC Power (>90W)
600
„„ UPS
500
„„ TV PFC (>90W)
400
„„ Welding Machines
300
200
IDP08E65D2
Comp C
100
Comp D
0
1.3
1.4
1.5
1.6
1.7
1.8
VF [V]
www.infineon.com/rapiddiodes
1.9
2.0
2.1
2.2
2.3
Product Brief
Ultrafast Reverse Recovery Power Silicon Diodes
Rapid Diodes – The Perfect Partner to CoolMOS™ and TRENCHSTOP™ 5
Rapid 1 with optimized VF
„„ 1.35V temperature-stable forward voltage (VF)
„„
The Rapid 2 diode family
Lowest reverse recovery charge (Qrr): VF ratio for BiC performance
„„ Low reverse recovery time (trr)
„„ Lowest Irrm to provide lowest turn-on losses on the boost switch
„„ Designed for applications switching between 40kHz and 100kHz
„„ trr < 50ns
„„
Highest S-factor for ultimate softness and low EMI filtering needed
„„ Lowest Irrm to provide lowest turn-on losses on the boost switch
„„ Designed for applications switching between 18kHz and 40kHz
„„ trr < 100ns
IDW75D65D1 (Dual Anode)
Common Cathode and Dual Anode Rapid Diode
in TO-247-3 and TO-220-3
„„ Optimization of the layout for more compact design and
easier assembly
„„ Nominal current Inom up to 75A Rapid 1 in Dual Anode
„„ 2 times 40A Rapid 1 and Rapid 2 in Common Cathode
A
A
A1
C
IDW80C65D1 (Common Cathode)
A2 A
C
A
A1
C
A2
C
Efficiency [%]
Rapid 2 Best-in-Class Performance
97.6
97.4
97.2
97.0
96.8
96.6
96.4
96.2
96.0
95.8
95.6
PFC Efficiency @ 70kHz – High Line Vin = 230V
Highest S-factor and lowest Eon seen in the
switch for Best-in-Class system efficiency.
0
100
200
300
400
500
Output Power [W]
IDP08E65D2
600
Comp. 1
700
TO-220
Comp. 1
Eon [mJ]
52
59
Comp. 2
59
S
2.5
0.8
0.9
VF(typ) [V]
1.7
2.4
3.0
800
Comp. 2
The New Rapid Diode Families
Rapid 2
Rapid 1
Continous
current IC
TC = 100°C
8
15
20
30
40
60
75
80
8
15
20
30
40
80
TO-220 real 2pin
IDP08E65D1
IDP15E65D1
IDP30E65D1 new
IDP08E65D2
IDP15E65D2
IDP20E65D2 new
IDP30E65D2 new
IDP40E65D2
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2015 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B114-H9794-V3-7600-EU-EC
Date: 01 / 2015
TO-220 FullPAK real 2pin
TO-220 3pin
Common Cathode
IDV20E65D1 new
IDV08E65D2
IDV15E65D2
IDV30E65D2 new
IDP20C65D2
IDP30C65D2
TO-247 3pin
TO-247 3pin
Common Cathode
IDW30E65D1
IDW40E65D1
IDW30C65D1 new
IDW15E65D2
new
new
IDW40E65D2
Attention please!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
IDW60C65D1 new
IDW75D65D1 new
IDW80C65D1 new
IDW20C65D2 new
IDW30C65D2 new
IDW80C65D2 new
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only
be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause
the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life
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to assume that the health of the user or other persons may
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