Product Brief Ultrafast Reverse Recovery Power Silicon Diodes Rapid Diodes – The Perfect Partner to CoolMOS™ and TRENCHSTOP™ 5 With the new 650V Rapid 1 and Rapid 2 Diode families, Infineon enters the high voltage hyperfast silicon diode market. They represent a perfect balance between cost and performance and target high efficiency applications switching between 18kHz and 100kHz. The new diodes are optimized to work in harmony with CoolMOS™ and TRENCHSTOP™ 5 in PFC topologies. The Rapid 1 family is optimized with low VF and soft recovery and is perfect for applications switching between 18kHz and 40kHz, where conduction losses and EMI emissions are critical design parameters. The Rapid 2 family meanwhile is designed for applications switching between 40kHz and 100kHz. In this switching range, the main loss component comes from the switching losses, therefore the Rapid 2 has been optimized to provide low Qrr and trr. The Rapid 2 also provides super soft recovery behavior with an S-factor >>1. Features Temperature stable conduction losses (VF) Rapid 1 offers 250mV lower conduction losses (VF) than best competitor Rapid 2 offers lowest Qrr: VF ratio 10% lower Irrm than best competitor High level of softness Benefits Rapid 2 offers Best-in-Class (BiC) efficiency for hyperfast Si diodes at 70kHz Lowest Irrm improves the Eon of the switch Emitter Controlled Diodes RAPID 1 RAPID 2 SiC 0Hz18kHz 40kHz100kHz >100kHz Trade-off VF – Qrr in the PFC by 10% High level of softness provides BiC EMI behavior Applications 1000 900 800 PFC Server Comp A PFC Telecom Rectifier Comp B 700 Qrr [nC] Room and Commercial Airconditioners IDW30E65D1 PC Power (>90W) 600 UPS 500 TV PFC (>90W) 400 Welding Machines 300 200 IDP08E65D2 Comp C 100 Comp D 0 1.3 1.4 1.5 1.6 1.7 1.8 VF [V] www.infineon.com/rapiddiodes 1.9 2.0 2.1 2.2 2.3 Product Brief Ultrafast Reverse Recovery Power Silicon Diodes Rapid Diodes – The Perfect Partner to CoolMOS™ and TRENCHSTOP™ 5 Rapid 1 with optimized VF 1.35V temperature-stable forward voltage (VF) The Rapid 2 diode family Lowest reverse recovery charge (Qrr): VF ratio for BiC performance Low reverse recovery time (trr) Lowest Irrm to provide lowest turn-on losses on the boost switch Designed for applications switching between 40kHz and 100kHz trr < 50ns Highest S-factor for ultimate softness and low EMI filtering needed Lowest Irrm to provide lowest turn-on losses on the boost switch Designed for applications switching between 18kHz and 40kHz trr < 100ns IDW75D65D1 (Dual Anode) Common Cathode and Dual Anode Rapid Diode in TO-247-3 and TO-220-3 Optimization of the layout for more compact design and easier assembly Nominal current Inom up to 75A Rapid 1 in Dual Anode 2 times 40A Rapid 1 and Rapid 2 in Common Cathode A A A1 C IDW80C65D1 (Common Cathode) A2 A C A A1 C A2 C Efficiency [%] Rapid 2 Best-in-Class Performance 97.6 97.4 97.2 97.0 96.8 96.6 96.4 96.2 96.0 95.8 95.6 PFC Efficiency @ 70kHz – High Line Vin = 230V Highest S-factor and lowest Eon seen in the switch for Best-in-Class system efficiency. 0 100 200 300 400 500 Output Power [W] IDP08E65D2 600 Comp. 1 700 TO-220 Comp. 1 Eon [mJ] 52 59 Comp. 2 59 S 2.5 0.8 0.9 VF(typ) [V] 1.7 2.4 3.0 800 Comp. 2 The New Rapid Diode Families Rapid 2 Rapid 1 Continous current IC TC = 100°C 8 15 20 30 40 60 75 80 8 15 20 30 40 80 TO-220 real 2pin IDP08E65D1 IDP15E65D1 IDP30E65D1 new IDP08E65D2 IDP15E65D2 IDP20E65D2 new IDP30E65D2 new IDP40E65D2 Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2015 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B114-H9794-V3-7600-EU-EC Date: 01 / 2015 TO-220 FullPAK real 2pin TO-220 3pin Common Cathode IDV20E65D1 new IDV08E65D2 IDV15E65D2 IDV30E65D2 new IDP20C65D2 IDP30C65D2 TO-247 3pin TO-247 3pin Common Cathode IDW30E65D1 IDW40E65D1 IDW30C65D1 new IDW15E65D2 new new IDW40E65D2 Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). IDW60C65D1 new IDW75D65D1 new IDW80C65D1 new IDW20C65D2 new IDW30C65D2 new IDW80C65D2 new Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.