SiDB766760 Vishay Siliconix Current-Sense MOSFET Evaluation Board FEATURES D Facilitates Evaluation of Vishay Siliconix Current Sensing Power MOSFETs Available in Three Different Packages D Jumper Isolation to Select The Device Under Test D Simple Two Resistor External Circuit for Each Variety ORDERING INFORMATION D SiDB766760 FIGURE 1. EVB Assembly DESCRIPTION This evaluation board (EVB) is loaded with the following Vishay Siliconix current sensing MOSFETs: SUM60N08-07C, (5-pin D2PAK), Si4730EY (single SO-8), and Si6862DQ (dual TSSOP–8). Figure 1 shows the PC board assembly. A simple electrical set-up allows users to evaluate the effect of these parameters and operating condition variations: a. b. c. d. sensing capability of each package (Figures 2, 3, 4, and 5, pages 4 and 5). Using this EVB, users can devise various design experiments to study device behavior patterns and characterize various parameters for current sensing MOSFETs. Users can also connect the current sense signal directly into the external circuit to prototype the controller. RSENSE, current sense resistor VGS, gate-source voltage IDS, drain current TA, ambient temperature The electrical schematic diagram for the PC board is shown in Appendix (A). The bill of material (BOM) for the PC board is given in Appendix (B) and the board layout details are given in Appendix (C). A basic demo set-up consisting of four connection configuration variations allows users to compare the current The demonstration board layout is available in Gerber file format. Please contact your Vishay Siliconix sales representative or distributor for a copy. PIN CONFIGURATIONS D2PAK-5 SO-8 1 2 3 4 5 SENSE 1 8 D KELVIN 2 7 S 3 6 G 4 5 TSSOP-8 D D 1 S1 2 D SENSE1 3 G 4 D 8 D 7 S2 D 6 SENSE2 5 KELVIN Top View Top View G D S KELVIN Document Number: 72431 23-Oct-03 SENSE www.vishay.com 1 SiDB766760 Vishay Siliconix TEST SET-UP Evaluation of SUM60N08-07C in 5-pin D2PAK Package Figure 2 (page 4) shows the electrical connection details. Please observe the polarity of each connection. 1. Connect the main power supply, Vcc, between CON4 and CON9, +ve to CON4 and –ve to CON9. 2. Connect the +ve of the electronic load to CON5 and –ve to CON6. 3. Connect an external jumper between CON7 and CON8. 4. Connect the +ve of auxiliary power supply, VGS, to CON3, pin 1 and –ve to CON3, pin 2. 5. Connect the +ve of voltmeter, VS, to the monitoring test port, TP6, pin 1 and –ve to TP6, pin 2. 6. Remove all other jumper shunts (JP1, JP2, JP3, TP2, TP3, and TP5). Evaluation of Si4730EY MOSFET in SO-8 Package Figure 3 (page 4) shows the electrical connection details. Please observe the polarity of each connection. 1. Connect the main power supply, Vcc, between CON4 and CON9, +ve to CON4 and –ve to CON9. 2. Connect the +ve of the electronic load to CON5 and –ve to CON6. 3. Connect the +ve of auxiliary power supply, VGS, to CON2, pin 1 and –ve to CON2, pin 2. 4. Connect the +ve of voltmeter, VS, to the monitoring test port, TP4, pin 1 and –ve to TP4, pin 2. 5. Place a jumper shunt to short pins 1 and 2 on TP5. Remove all other jumper shunts (JP1, JP2, JP3, TP2, TP3) and the external jumper. Evaluation of Si6862DQ Dual MOSFET in TSSOP-8 Package Channel 1 MOSFET Terminated On Pins 1, 2, 3 and 4 Figure 4 (page 5) shows the electrical connection details. Please observe the polarity of each connection. 1. Connect the main power supply, VCC, between CON4 and CON9, +ve to CON4 and –ve to CON9. 2. Connect the +ve of the electronic load to CON5 and –ve to CON6. 3. 4. 5. 6. 7. 8. Connect the +ve of auxiliary power supply, VGS, to CON1, pin 1 and –ve to CON1, pin 2. Connect the +ve of voltmeter, VS, to the monitoring test port, TP1, pin1 and –ve to TP1, pin 2. Place a jumper shunt to short pins 1 and 2 on TP2. Place a jumper shunt on JP1, to short pins 1 and 2. Place a jumper shunt on JP2, to short pins 1 and 2. Place a jumper shunt on JP3, to short pins 1 and 2. www.vishay.com 2 9. Remove the jumper shunts on TP3 and TP5 and the external jumper. Channel 2 MOSFET Terminated On Pins 5, 6, 7 and 8: Figure 5 (page 5) shows the electrical connection details. Please observe the polarity of each connection. 1. Connect the main power supply, Vcc, between CON4 and CON9, +ve to CON4 and –ve to CON9. 2. Connect the +ve of the electronic load to CON5 and –ve to CON6. 3. Connect the +ve of auxiliary power supply, VGS, to CON1, pin 1 and –ve to CON1, pin 2. 4. Connect the +ve of voltmeter, VS, to the monitoring test port, TP1, pin 1 and –ve to TP1, pin 2. 5. Place a jumper shunt to short pins 1 and 2 on TP3. 6. Place a jumper shunt on JP1, to short pins 2 and 3. 7. Place a jumper shunt on JP2, to short pins 2 and 3. 8. Place a jumper shunt on JP3, to short pins 2 and 3. 9. Remove the jumper shunts on TP2 and TP5 and the external jumper. CIRCUIT OPERATION Select the appropriate set-up for the device under testing (DUT) and complete the electrical connection. 1. Connect the main power supply, auxiliary power supply and electronic load to 115-VAC mains input. 2. Adjust the output voltage of main supply to provide Vcc = 12 VDC. 3. Select the constant current mode for the electronic load and adjust the load current to 0 A. 4. Turn on the load. Adjust the output of auxiliary power supply to provide VGS = 10 VDC or 5.0 VDC as the case may be. 5. Adjust the load current, which is drain current, ID, in steps of 1 A up to the device rating or 15 A maximum and measure the current sense signal voltage, VS. 6. Record the MOSFET current, ID, and sense voltage, VS. See Table 1 on page 3. 7. Compute the current sense ratio, r, from VS and IDS: IDS = r x (VS / RSENSE) Where IDS = Drain-source current r = Current-sensing ratio VS = Current sense voltage SUMMARY The current sensing MOSFET EVB facilitates basic testing as well as parametric study of current sensing MOSFETs. The current sense signal can easily be sent to other circuits being tested to study control behavior. Document Number: 72431 23-Oct-03 SiDB766760 Vishay Siliconix TABLE 1: REPRESENTATIVE READINGS AND COMPUTATIONS SUM60N08-07C Kelvin-to-Ground Si4730EY D2PAK (5 Pin) SO-8 Si6862EY TSSOP-8 Channel 1 Channel 2 VDS 12 VDC VDS 12 VDC VDS 12 VDC 12 VDC VGS 10 VDC VGS 10 VDC VGS 5 VDC 5 VDC 200 600 RSENSE = 1 W RSENSE = 1 W Data Sheet Value of r 2470 Data Sheet Value of RSENSE = 1 W r 540 Data Sheet Value of RSENSE = 1.1 W IDS (ADC) VS (mV) r IDS (ADC) VS (mV) r IDS (ADC) 1 0.410 2439 1 1.522 597 2 0.845 2367 2 3.079 591 3 1.267 2368 3 4.618 4 1.691 2365 4 6.185 5 2.117 2362 5 6 2.534 2368 6 7 2.936 2362 8 3.386 9 3.805 10 11 r VS (mV) r VS (mV) r 1 5.590 179 1.559 641 2 11.210 178 3.140 637 591 3 16.790 179 4.734 634 588 4 22.300 179 6.370 628 7.768 585 5 27.800 180 8.090 618 9.363 583 6 32.700 183 9.880 607 7 11.190 569 7 38.500 182 11.250 622 2363 8 12.790 569 2365 9 14.580 561 4.231 2364 10 17.400 522 4.653 2364 11 19.200 521 12 5.076 2364 12 20.800 524 13 5.493 2367 14 5.905 2371 15 6.323 2372 Average 2371 Average 567 Average 180 Average 627 NOTES: 1 r = current sense ratio 2 Table 1 contains representative readings and computations obtained during testing of the EVB. The average values are in line with the datasheet specifications. Document Number: 72431 23-Oct-03 www.vishay.com 3 SiDB766760 Vishay Siliconix TEST SET-UP CLICK HERE TO RETURN TO: PAGE 1 PAGE 2 www.vishay.com 4 FIGURE 2. Test Set-Up for D2PAK Package — Board Marking T3 FIGURE 3. Test Set-Up for SO-8 Package — Board Marking T2 Document Number: 72431 23-Oct-03 SiDB766760 Vishay Siliconix TEST SET-UP (CONT’D) JP2, 3, 4 (pin 1, 2) FIGURE 4. Test Set-Up for TSSOP-8 Package — Channel 2 — Board Marking T1 CLICK HERE TO RETURN TO: PAGE 1 PAGE 2 Jumper Shunts TP 3 FIGURE 5. Document Number: 72431 23-Oct-03 Test Set-Up for TSSOP-8 Package — Channel 1 — Board Marking T1 www.vishay.com 5 www.vishay.com 6 1 2 CON1 T1 10 W, 5% TP4 Header 2 1 2 CON2 R2 TP1 Header 2 R4 1 W, 0.1% 4 R5 1 W, 0.1% Header 2 1 2 1 2 Header 2 TP3 TP2 1 2 10 W, 5% R1 6 7 5 1 2 3 JP3 Header 3 1 2 3 2 Si6862DQ 8 1 2 3 1 2 3 1 JP2 Header 3 JP1 Header 3 1 2 CON3 Si4730EY T2 Header 2 1 2 TP5 + 1 2 10 W, 5% R3 R6 1 W, 0.1% C1-C3 1000 mF, 100 V TP6 Header 2 VCC1 2 1 Ext. Jumper 1 Load 1 1 CON9 SUM60N08-07C T3 1 CON8 1 CON7 1 CON6 1 CON5 1 CON4 SiDB766760 Vishay Siliconix APPENDIX A: SCHEMATIC DIAGRAM Click Here to Return to Page 1 Document Number: 72431 23-Oct-03 SiDB766760 Vishay Siliconix APPENDIX B: BILL OF MATERIALS Item Qty Designator Description Footprint Vendor Part # Manufacturer 1 3 R1, R2, R3 10-Ω Resistor, 5% 805 CRCW0805, 10 Ω, 5% Vishay Dale 2 3 R4, R5, R6 1-Ω Resistor 1% 805 CRCW0805, 1 Ω, 1% Vishay Dale 3 3 C1, C2, C3 330-mF/100-V Electrolytic Capacitor RB-0.2/0.4 4 1 T1 Si6862DQ Current Sensing MOSFET TSSOP-8 Dual Si6862DQ Vishay Siliconix 5 1 T2 Si4730EY Current Sensing MOSFET SO-8 Si4730EY Vishay Siliconix 6 1 T3 SUM60N08-07C Current Sensing MOSFET D2PAK (5 pin) SUM60N08-07C Vishay Siliconix 7 6 CON1 to CON3, TP1 to TP6 2-Pin Connector SIP-2 92834-02-36-ND Digi-Key 8 6 CON4 to CON9 Terminal Connector LOADCON 7693-ND Digi-Key 9 3 JP1 to JP3 3-Pin Connector SIP-3 92834-03-36-ND Digi-Key 10 4 JMP Shunt jumper shunts A26228-ND Digi-Key 11 1 PCB Evaluation PCB NWTSM1 Vishay Siliconix CLICK HERE TO RETURN TO: PAGE 1 Document Number: 72431 23-Oct-03 www.vishay.com 7 SiDB766760 Vishay Siliconix APPENDIX C: LAYOUT FIGURE 6. Silk Screen Layer FIGURE 7. Top Copper Layer CLICK HERE TO RETURN TO: PAGE 1 www.vishay.com 8 Document Number: 72431 23-Oct-03 SiDB766760 Vishay Siliconix APPENDIX C: LAYOUT (CONT’D) FIGURE 8. Bottom Copper Layer CLICK HERE TO RETURN TO: PAGE 1 EVALUATION BOARD DISCLAIMER Vishay Siliconix (Vishay) provides this evaluation board (EVB) under the following conditions: The EVB is intended for DEMONSTRATION OR ENGINEERING DEVELOPMENT OR EVALUATION PURPOSES ONLY and is not considered to be fit for commercial use. Vishay assumes no liability for application assistance, customer product design, infringement of patents, or software performance. Please read the EVB datasheet carefully; it contains important information for its use. The user assumes all responsibility and liability for safe and proper handling of the EVB and to take any and all appropriate precautions concerning electrostatic discharge. Further, the user indemnifies Vishay from all claims arising from handling or use. The EVB is not regulatory-compliant or agency-certified. Any user handling the product must have electronics training and observe good laboratory practice standards. THE EVB IS PROVIDED AS IS, WHERE IS, WITH NO WARRANTIES WHATSOEVER, EITHER EXPRESSED, IMPLIED, OR STATUTORY, AND SPECIFICALLY EXCLUDING THE WARRANTIES OF MERCHANTABILITY AND FITNESS FOR ANY PARTICULAR PURPOSE. EXCEPT TO THE EXTENT OF THE INDEMNITY SET FORTH ABOVE, NEITHER PARTY SHALL BE LIABLE TO THE OTHER FOR ANY INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES. The EVB is not provided exclusively to the user and Vishay may supply the EVB to other users. No license is granted under any patent right or any other intellectual property right of Vishay. Document Number: 72431 23-Oct-03 www.vishay.com 9