SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sensing Diode FEATURES D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 60a APPLICATIONS D Automotive D Industrial D D2PAK-5L T1 D1 G D2 T2 1 2 3 4 5 S N-Channel MOSFET G D T1 S T2 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ d TC = 25_C TC = 100_C Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_C Operating Junction and Storage Temperature Range ID Unit V 60a 60a IDM 240 IS 60a IAR 60a EAR 180 A mJ 300c PD 3.75d W TJ, Tstg –55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd Junction-to-Case PCB Mountd RthJA 40 RthJC 0.5 _ _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71833 S-20174—Rev. A, 18-Mar-02 www.vishay.com 1 SUM60N08-07T New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 75 VGS(th) VDS = VGS, IDS = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 60 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C 50 VDS = 60 V, VGS = 0 V, TJ = 175_C 500 ID(on) VDS = 5 V, VGS = 10 V 120 rDS(on) VGS = 10 V, ID = 25 A, TJ = 125_C 0.010 VGS = 10 V, ID = 25 A, TJ = 175_C 0.013 VGS = 10 V, ID = 25 A Drain-Source On-State Resistancea Sense Forward Voltage Sense Diode Forward Voltage Increase Forward Transconductancea 4 V nA mA m A 0.0054 0.007 VFD1 IF = 50 mA 710 770 VFD2 IF = 25 mA 640 700 DVF From IF = 25 mA to IF = 50 mA 40 100 gfs VDS = 15 V, ID = 20 A 100 W mV S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 6500 VGS = 0 V, VDS = 25 V, f = 1 MHz 920 pF 400 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 15 20 tr VDD = 35 V, RL = 0.6 W 130 200 td(off) ID ] 60 A, VGEN = 10 V, RG = 2.5 W 75 115 120 180 Rise Timec Turn-Off Delay Timec Fall Timec 110 VDS = 35 V, VGS = 10 V, ID = 60 A 150 30 nC 30 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 60 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 60 A, VGS = 0 V trr IRM(REC) Qrr IF = 60 A, di/dt = 100 A/ms m 1.0 1.5 V 75 115 ns 3.5 5 A 0.13 0.29 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71833 S-20174—Rev. A, 18-Mar-02 SUM60N08-07T New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 200 VGS = 10 thru 6 V 160 I D – Drain Current (A) I D – Drain Current (A) 200 150 5V 100 50 120 80 TC = 125_C 40 25_C –55_C 4V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 250 0.020 TC = –55_C r DS(on) – On-Resistance ( W ) g fs – Transconductance (S) 200 25_C 150 125_C 100 50 0 0.015 0.010 VGS = 10 V 0.005 0.000 0 15 30 45 60 75 0 90 20 40 VGS – Gate-to-Source Voltage (V) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 10000 20 V GS – Gate-to-Source Voltage (V) Ciss 8000 C – Capacitance (pF) 60 6000 4000 Coss 2000 Crss 0 VGS = 35 V ID = 60 A 16 12 8 4 0 0 15 30 45 60 VDS – Drain-to-Source Voltage (V) Document Number: 71833 S-20174—Rev. A, 18-Mar-02 75 0 50 100 150 200 Qg – Total Gate Charge (nC) www.vishay.com 3 SUM60N08-07T New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150_C 10 TJ = 25_C 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.2 TJ – Junction Temperature (_C) 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Sense Diode Forward Voltage vs. Temperature 100 1.0 ID = 10 mA 0.8 ID = 50 mA 88 0.6 VF (V) V (BR)DSS (V) 94 ID = 25 mA 82 0.4 76 0.2 70 –50 0.0 –25 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) TJ – Junction Temperature (_C) Sense Diode Forward Voltage 0.01 0.001 I F (A) TJ = 150_C 0.0001 TJ = 25_C 0.00001 0.000001 0 0.3 0.6 0.9 1.2 1.5 VF (V) www.vishay.com 4 Document Number: 71833 S-20174—Rev. A, 18-Mar-02 SUM60N08-07T New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 75 I D – Drain Current (A) I D – Drain Current (A) 60 45 30 15 100 100 ms 1 ms 10 ms 100 ms dc 10 TC = 25_C Single Pulse 1 0 10 ms Limited by rDS(on) 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) Document Number: 71833 S-20174—Rev. A, 18-Mar-02 www.vishay.com 5