VISHAY SI6862DQ

Si6862DQ
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET with Current Sense
VDS (V)
20
rDS(on) ()
ID (A)
0.026 @ VGS = 4.5 V
6.6
0.036 @ VGS = 2.5 V
5.6
D
KELVIN
TSSOP-8
S1
SENSE1
8
D
7
S2
3
6
SENSE2
4
5
KELVIN
D
1
S1
2
SENSE1
G
Si6862DQ
S2
SENSE2
Top View
G
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
12
Continuous Drain Current (TJ = 150C)a
TA = 25C
TA = 70C
Pulsed Drain Current (10 s Pulse Width)
IS
TA = 25C
TA = 70C
Operating Junction and Storage Temperature Range
PD
V
6.6
5.2
5.2
4.2
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
Unit
A
30
1.5
0.9
1.8
1.1
1.1
0.7
TJ, Tstg
W
C
–55 to 150
Parameter
Maximum Junction-to-Ambienta
Symbol
t 10 sec
Steady State
Maximum Junction-to-Foot
Steady State
RthJA
RthJF
Typical
Maximum
55
70
93
110
36
45
Unit
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71145
S-00717—Rev. B, 03-Apr-00
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Si6862DQ
New Product
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 A
0.6
IGSS
VDS = 0 V, VGS = "12 V
"100
VDS = 16 V, VGS = 0 V
1
VDS = 16 V, VGS = 0 V, TJ = 70C
5
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
VDS w 5 V, VGS = 4.5 V
V
nA
A
30
A
VGS = 4.5 V, ID = 5.2 A
0.022
0.026
VGS = 2.5 V, ID = 4.4 A
0.029
0.036
Forward Transconductancea
gfs
VDS = 10 V, ID = 5.2 A
23
Diode Forward Voltagea
VSD
IS = 0.9 A, VGS = 0 V
0.8
1.2
25
40
S
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V,
V VGS = 4
4.5
5V
V, ID = 5
5.2
2A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
8.1
Turn-On Delay Time
td(on)
25
Rise Time
tr
Turn-Off Delay Time
VDD = 10 V
V,, RL = 10 ID ^ 1 A,
A VGEN = 4
4.5
5V
V, RG = 6 td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
C
3.7
IF = 0.9 A, di/dt = 100 A/s
50
40
80
80
160
45
90
40
80
ns
Notes
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Output Characteristics
Transfer Characteristics
30
30
VGS = 5 thru 3 V
TC = –55C
2.5 V
24
I D – Drain Current (A)
I D – Drain Current (A)
24
18
2V
12
6
18
125C
12
6
1.5 V
1V
0
0
0
0.5
1.0
1.5
2.0
2.5
VDS – Drain-to-Source Voltage (V)
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2-2
25C
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS – Gate-to-Source Voltage (V)
Document Number: 71145
S-00717—Rev. B, 03-Apr-00
Si6862DQ
New Product
Vishay Siliconix
On-Resistance vs. Drain Current
Capacitance
2500
0.05
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
0.06
0.04
VGS = 2.5 V
0.03
VGS = 4.5 V
0.02
2000
Ciss
1500
1000
Coss
500
0.01
0
Crss
0
0
6
12
18
24
0
30
4
ID – Drain Current (A)
Gate Charge
16
20
On-Resistance vs. Junction Temperature
1.6
VDS = 10 V
ID = 5.2 A
r DS(on) – On-Resistance ()
(Normalized)
V GS – Gate-to-Source Voltage (V)
12
VDS – Drain-to-Source Voltage (V)
5
4
3
2
1
VGS = 4.5 V
ID = 5.2 A
1.4
1.2
1.0
0.8
0
0
5
10
15
20
0.6
–50
25
–25
0
Qg – Total Gate Charge (nC)
25
50
75
100
125
150
TJ – Junction Temperature (C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.06
r DS(on) – On-Resistance ( )
30
I S – Source Current (A)
8
TJ = 150C
10
TJ = 25C
0.05
ID = 5.2 A
0.04
0.03
0.02
0.01
0
1
0
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71145
S-00717—Rev. B, 03-Apr-00
1.2
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
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Si6862DQ
New Product
Vishay Siliconix
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.4
30
25
ID = 250 A
20
Power (W)
V GS(th) Variance (V)
0.2
–0.0
–0.2
15
10
–0.4
5
–0.6
–50
–25
0
25
50
75
100
125
150
0
10–2
10–1
1
TJ – Temperature (C)
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 93C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
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2-4
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71145
S-00717—Rev. B, 03-Apr-00
Si6862DQ
New Product
Vishay Siliconix
On-Resistance vs. Gate-to-Source Sense Voltage
On-Resistance vs. Sense Current
12
25
r DS(on) – On-Resistance ( )
r DS(on) – On-Resistance ( )
VGS = 2.5 V
9
6
VGS = 4.5 V
3
0
20
ISENSE = 10 mA
15
10
5
0
0
0.02
0.04
0.06
0.08
0.10
0
ISENSE – Sense Current (A)
2
3
4
5
VGSS – Gate-to-Source Sense Voltage (V)
Current Ratio (IMAIN/IS) vs. Gate Voltage
(Channel-1)
Current Ratio (IMAIN/IS) vs. Gate Voltage
(Channel-2)
1000
2500
RS = 17.97 RS = 14.96 14.96 800
2000
9.97 9.97 600
Ratio
Ratio
1
4.73 400
1500
4.73 1000
1.06 1.06 200
500
Kelvin and Source Pins Are Separated
0
0
0
3
6
VG (V)
Document Number: 71145
S-00717—Rev. B, 03-Apr-00
9
12
0
3
6
9
12
VG (V)
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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