Si6862DQ New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET with Current Sense VDS (V) 20 rDS(on) () ID (A) 0.026 @ VGS = 4.5 V 6.6 0.036 @ VGS = 2.5 V 5.6 D KELVIN TSSOP-8 S1 SENSE1 8 D 7 S2 3 6 SENSE2 4 5 KELVIN D 1 S1 2 SENSE1 G Si6862DQ S2 SENSE2 Top View G Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current (10 s Pulse Width) IS TA = 25C TA = 70C Operating Junction and Storage Temperature Range PD V 6.6 5.2 5.2 4.2 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID Unit A 30 1.5 0.9 1.8 1.1 1.1 0.7 TJ, Tstg W C –55 to 150 Parameter Maximum Junction-to-Ambienta Symbol t 10 sec Steady State Maximum Junction-to-Foot Steady State RthJA RthJF Typical Maximum 55 70 93 110 36 45 Unit C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71145 S-00717—Rev. B, 03-Apr-00 www.vishay.com FaxBack 408-970-5600 2-1 Si6862DQ New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 A 0.6 IGSS VDS = 0 V, VGS = "12 V "100 VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 70C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) VDS w 5 V, VGS = 4.5 V V nA A 30 A VGS = 4.5 V, ID = 5.2 A 0.022 0.026 VGS = 2.5 V, ID = 4.4 A 0.029 0.036 Forward Transconductancea gfs VDS = 10 V, ID = 5.2 A 23 Diode Forward Voltagea VSD IS = 0.9 A, VGS = 0 V 0.8 1.2 25 40 S V Dynamicb Total Gate Charge Qg VDS = 10 V, V VGS = 4 4.5 5V V, ID = 5 5.2 2A Gate-Source Charge Qgs Gate-Drain Charge Qgd 8.1 Turn-On Delay Time td(on) 25 Rise Time tr Turn-Off Delay Time VDD = 10 V V,, RL = 10 ID ^ 1 A, A VGEN = 4 4.5 5V V, RG = 6 td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC C 3.7 IF = 0.9 A, di/dt = 100 A/s 50 40 80 80 160 45 90 40 80 ns Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Output Characteristics Transfer Characteristics 30 30 VGS = 5 thru 3 V TC = –55C 2.5 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 2V 12 6 18 125C 12 6 1.5 V 1V 0 0 0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-2 25C 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) Document Number: 71145 S-00717—Rev. B, 03-Apr-00 Si6862DQ New Product Vishay Siliconix On-Resistance vs. Drain Current Capacitance 2500 0.05 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 0.06 0.04 VGS = 2.5 V 0.03 VGS = 4.5 V 0.02 2000 Ciss 1500 1000 Coss 500 0.01 0 Crss 0 0 6 12 18 24 0 30 4 ID – Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 5.2 A r DS(on) – On-Resistance () (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) 5 4 3 2 1 VGS = 4.5 V ID = 5.2 A 1.4 1.2 1.0 0.8 0 0 5 10 15 20 0.6 –50 25 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 r DS(on) – On-Resistance ( ) 30 I S – Source Current (A) 8 TJ = 150C 10 TJ = 25C 0.05 ID = 5.2 A 0.04 0.03 0.02 0.01 0 1 0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71145 S-00717—Rev. B, 03-Apr-00 1.2 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-3 Si6862DQ New Product Vishay Siliconix Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 30 25 ID = 250 A 20 Power (W) V GS(th) Variance (V) 0.2 –0.0 –0.2 15 10 –0.4 5 –0.6 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 1 TJ – Temperature (C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 93C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 www.vishay.com FaxBack 408-970-5600 2-4 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71145 S-00717—Rev. B, 03-Apr-00 Si6862DQ New Product Vishay Siliconix On-Resistance vs. Gate-to-Source Sense Voltage On-Resistance vs. Sense Current 12 25 r DS(on) – On-Resistance ( ) r DS(on) – On-Resistance ( ) VGS = 2.5 V 9 6 VGS = 4.5 V 3 0 20 ISENSE = 10 mA 15 10 5 0 0 0.02 0.04 0.06 0.08 0.10 0 ISENSE – Sense Current (A) 2 3 4 5 VGSS – Gate-to-Source Sense Voltage (V) Current Ratio (IMAIN/IS) vs. Gate Voltage (Channel-1) Current Ratio (IMAIN/IS) vs. Gate Voltage (Channel-2) 1000 2500 RS = 17.97 RS = 14.96 14.96 800 2000 9.97 9.97 600 Ratio Ratio 1 4.73 400 1500 4.73 1000 1.06 1.06 200 500 Kelvin and Source Pins Are Separated 0 0 0 3 6 VG (V) Document Number: 71145 S-00717—Rev. B, 03-Apr-00 9 12 0 3 6 9 12 VG (V) www.vishay.com FaxBack 408-970-5600 2-5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1