1 nV/√Hz Low Noise 210°C Instrumentation Amplifier AD8229-KGD Known Good Die FUNCTIONAL BLOCK DIAGRAM Designed for 210°C operation Low noise 1 nV/√Hz input noise 45 nV/√Hz output noise High CMRR 126 dB CMRR (minimum), G = 100 80 dB CMRR (minimum) to 5 kHz, G = 1 Excellent ac specifications 15 MHz bandwidth (G = 1) 1.2 MHz bandwidth (G = 100) 22 V/µs slew rate THD: 130 dB (1 kHz, G = 1) Versatile ±4 V to ±17 V dual supply Gain set with single resistor (G = 1 to 1000) Temperature range: −40°C to +210°C Known good die (KGD): these die are fully guaranteed to data sheet specifications –IN +VS RG VOUT RG REF +IN –VS AD8229-KGD 10107-003 FEATURES Figure 1. APPLICATIONS Down-hole instrumentation Harsh environment data acquisition Exhaust gas measurements Vibration analysis The AD8229-KGD has been designed for high temperature operation. The process is dielectrically isolated to avoid leakage currents at high temperatures. The design architecture was chosen to compensate for the low VBE voltages at high temperatures. The AD8229-KGD excels at distinguishing tiny signals. It delivers industry leading 1 nV/√Hz input noise performance. The high CMRR of the AD8229-KGD prevents unwanted signals from corrupting the acquisition. The CMRR increases as the gain increases, offering high rejection when it is most needed. The AD8229-KGD is one of the fastest instrumentation amplifiers available. Its current feedback architecture provides bandwidth that is quite high, even at high gains, for example, 1.2 MHz at G = 100. With the high bandwidth comes excellent distortion performance, allowing use in demanding applications such as vibration analysis. Gain is set from 1 to 1000 with a single resistor. A reference pin allows the user to offset the output voltage. This feature is useful when interfacing with analog-to-digital converters. Additional application and technical information can be found in the AD8229 standard product data sheet. 100 80 60 40 20 0 –20 –40 –60 –80 –100 –55 –35 –15 5 25 45 65 85 105 125 145 165 185 205 225 TEMPERATURE (°C) 09412-016 The AD8229-KGD is an ultralow noise instrumentation amplifier designed for measuring small signals in the presence of large common-mode voltages and high temperatures. VOSI (µV) GENERAL DESCRIPTION Figure 2. Typical Input Offset vs. Temperature (G = 100) Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. www.analog.com Tel: 781.329.4700 Fax: 781.461.3113 ©2011 Analog Devices, Inc. All rights reserved. AD8229-KGD Known Good Die TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ........................................................6 Applications ....................................................................................... 1 ESD Caution...................................................................................6 General Description ......................................................................... 1 Pad Configuration and Function Descriptions .............................7 Functional Block Diagram .............................................................. 1 Outline Dimensions ..........................................................................8 Revision History ............................................................................... 2 Die Specifications and Assembly Recommendations ..............8 Specifications..................................................................................... 3 Ordering Guide .............................................................................8 REVISION HISTORY 8/11—Revision 0: Initial Version Rev. 0 | Page 2 of 8 Known Good Die AD8229-KGD SPECIFICATIONS +VS = 15 V, −VS = −15 V, VREF = 0 V, TA = 25°C, G = 1, RL = 10 kΩ, unless otherwise noted. Table 1. Parameter COMMON-MODE REJECTION RATIO (CMRR) CMRR DC to 60 Hz with 1 kΩ Source Imbalance G=1 Temperature Drift G = 10 Temperature Drift G = 100 Temperature Drift G = 1000 CMRR at 5 kHz G=1 G = 10 G = 100 G = 1000 VOLTAGE NOISE Spectral Density 1: 1 kHz Input Voltage Noise, eni Output Voltage Noise, eno Peak to Peak: 0.1 Hz to 10 Hz G=1 Test Conditions/Comments Min Typ Max Unit VCM = ±10 V 86 134 dB nV/V/°C dB nV/V/°C dB nV/V/°C dB 80 90 90 90 dB dB dB dB TA = −40°C to +210°C 300 106 TA = −40°C to +210°C 30 126 TA = −40°C to +210°C TA = −40°C to +210°C VCM = ±10 V 3 VIN+, VIN− = 0 V 1 45 1.1 50 nV/√Hz nV/√Hz 2 µV p-p 100 nV p-p Spectral Density: 1 kHz 1.5 pA/√Hz Peak to Peak: 0.1 Hz to 10 Hz 100 pA p-p G = 1000 CURRENT NOISE VOLTAGE OFFSET VOS = VOSI + VOSO/G Input Offset, VOSI Average TC Output Offset, VOSO Average TC Offset RTI vs. Supply (PSR) G=1 G = 10 G = 100 G = 1000 INPUT CURRENT Input Bias Current High Temperature Input Offset Current High Temperature 100 −40°C to +210°C −40°C to +210°C VS = ±5 V to ±15 V −40°C to +210°C −40°C to +210°C −40°C to +210°C −40°C to +210°C TA = 210°C TA = 210°C Rev. 0 | Page 3 of 8 µV 0.1 1 µV/°C 3 1000 10 µV µV/°C 86 106 126 130 dB dB dB dB 70 200 35 50 nA nA nA nA AD8229-KGD Parameter DYNAMIC RESPONSE Small Signal Bandwidth – 3 dB G=1 G = 10 G = 100 G = 1000 Settling Time 0.01% G=1 G = 10 G = 100 G = 1000 Settling Time 0.001% G=1 G = 10 G = 100 G = 1000 Slew Rate G = 1 to 100 GAIN2 Gain Range Gain Error G=1 G = 10 G = 100 G = 1000 Gain Nonlinearity G = 1 to 1000 Gain vs. Temperature G=1 G > 10 INPUT Impedance (Pin to Ground)3 Input Operating Voltage Range4 Over Temperature OUTPUT Output Swing High Temperature Output Swing High Temperature Short-Circuit Current REFERENCE INPUT RIN IIN Voltage Range Reference Gain to Output Reference Gain Error Known Good Die Test Conditions/Comments Min Typ Max Unit 15 4 1.2 0.15 MHz MHz MHz MHz 0.75 0.65 0.85 5 µs µs µs µs 0.9 0.9 1.2 7 µs µs µs µs 22 V/µs 10 V step 10 V step G = 1 + (6 kΩ/RG) 1 1000 V/V 0.03 0.3 0.3 0.3 % % % % VOUT = ±10 V 0.01 0.05 0.05 0.1 VOUT = −10 V to +10 V RL = 10 kΩ 2 −40°C to +210°C −40°C to +210°C 2 ppm 5 −100 ppm/°C ppm/°C VS = ±5 V to ±18 V for dual supplies −40°C to +210°C −VS + 2.8 1.5||3 +VS − 2.5 GΩ||pF V −VS + 2.8 +VS − 2.5 V RL = 2 kΩ −VS + 1.9 +Vs − 1.5 V TA = 210°C RL = 10 kΩ TA = 210°C −VS + 1.1 −VS + 1.8 −VS + 1.1 +Vs − 1.1 +Vs − 1.2 +Vs − 1.1 V V V mA 35 10 70 VIN+, VIN− = 0 V −VS +VS 1 0.01 Rev. 0 | Page 4 of 8 kΩ µA V V/V % Known Good Die Parameter POWER SUPPLY Operating Range Quiescent Current High Temperature TEMPERATURE RANGE For Specified Performance5 AD8229-KGD Test Conditions/Comments Min Typ Max Unit 6.7 ±17 7 12 V mA mA +210 °C ±4 TA = 210°C −40 Total Voltage Noise = √(eni2 + (eno/G)2)+ eRG2). These specifications do not include the tolerance of the external gain setting resistor, RG. For G>1, RG errors should be added to the specifications given in this table. 3 Differential and common-mode input impedance can be calculated from the pin impedance: ZDIFF = 2(ZPIN); ZCM = ZPIN/2. 4 Input voltage range of the AD8229-KGD input stage only. The input range can depend on the common-mode voltage, differential voltage, gain, and reference voltage. 5 Performance at 210°C is guaranteed for 1000 hours assuming that the maximum junction temperature listed in the Absolute Maximum Ratings, Table 2 is not exceeded. 1 2 Rev. 0 | Page 5 of 8 AD8229-KGD Known Good Die ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Supply Voltage Output Short-Circuit Current Duration Maximum Voltage at –IN, +IN1 Differential Input Voltage1 Gain ≤ 4 4 > Gain > 50 Gain ≥ 50 Maximum Voltage at REF Storage Temperature Range Specified Temperature Range Maximum Junction Temperature 1 Rating ±17 V Indefinite ±VS ±VS ±50 V/gain ±1 V ±VS −65°C to +150°C −40°C to +210°C 245°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD CAUTION For voltages beyond these limits, use input protection resistors. Rev. 0 | Page 6 of 8 Known Good Die AD8229-KGD PAD CONFIGURATION AND FUNCTION DESCRIPTIONS ADI Logo 10 1 2 9 3 4 5 6 7 10107-002 8 Figure 3. Pad Configuration Table 3. Pad Function Descriptions1 Pad No. 1 2 3 4 5 6 7 8 9 10 1 X-Axis (μm) −661 −661 −661 −661 −661 −661 +682 +538 +626 +717 Y-Axis (μm) +665 +525 +331 +83 −111 −251 −1231 −839 +337 +979 Mnemonic −IN RG RG RG RG +IN −VS REF VOUT +VS Pad Type Single Single Double Double Single Single Single Double Single Single Description Negative Input Pad. Gain Setting Pad. Gain Setting Pad. Gain Setting Pad. Gain Setting Pad. Positive Input Pad. Negative Power Supply Pad. Reference Voltage Pad. Output Pad. Positive Power Supply Pad. To minimize gain errors introduced by the bond wires, use Kelvin connections between the chip and the gain resistor, RG, by connecting Pad 2 and Pad 3 in parallel to one end of RG, and connecting Pad 4 and Pad 5 in parallel to the other end of RG. For unity-gain applications where RG is not required, Pad 2 and Pad 3 must be bonded together as do Pad 4 and Pad 5. Rev. 0 | Page 7 of 8 AD8229-KGD Known Good Die OUTLINE DIMENSIONS 0.493 0.483 0.473 1.755 10 1 2 9 3 2.890 4 5 6 8 SIDE VIEW TOP VIEW (CIRCUIT SIDE) 0.092 × 0.092 08-16-2011-A 7 Figure 4. AD8229-KGD Die 1.755 mm × 2.890 mm Die Size (Dimensions shown in millimeters) DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS Table 4. Die Specifications Parameter Chip Size Scribe Line Width Die Size Thickness Bond Pad Bond Pad Composition Backside Passivation 1 Unit1 μm μm mm (maximum) μm μm (minimum) % N/A N/A Value 1665 × 2800 90 × 90 1.755 × 2.890 483 ± 10 92 × 92 0.5 AlCu Bare Polymide N/A means not applicable. Table 5. Assembly Recommendations Assembly Component Die Attach Bonding Method Bonding Sequence Recommendation No special requirements Gold ball or aluminum wedge Any ORDERING GUIDE Model AD8229-KGD-CHIPS Temperature Range −40°C to +210°C ©2011 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D10107-0-8/11(0) Rev. 0 | Page 8 of 8 Package Option Die Only