TEA1993TS
GreenChip synchronous rectifier controller
Rev. 1 — 31 May 2016
Product data sheet
1. General description
The TEA1993TS is a member of a new generation of Synchronous Rectifier (SR)
controller ICs for switched mode power supplies with adaptive gate drive for maximum
efficiency at any load.
The TEA1993TS is a dedicated controller IC for synchronous rectification on the
secondary side of flyback converters. It incorporates the sensing stage and driver stage
for driving the SR MOSFET, which is rectifying the output of the secondary transformer
winding.
The TEA1993TS can generate its own supply voltage for battery charging applications
with low output voltage or for applications with high-side rectification.
The TEA1993TS is fabricated in a Silicon-On-Insulator (SOI) process.
2. Features and benefits
2.1 Efficiency features
Adaptive gate drive for maximum efficiency at any load
Typical supply current in no-load operation below 200 A
2.2 Application features
Operates in a wide output voltage range down to 0 V
Drain sense pin capable of handling input voltages up to 120 V
Self-supplying for operation with low output voltage
Self-supplying for high-side rectification without the use of an auxiliary winding
Operates with standard and logic level SR MOSFETs
Supports USB BC, USB PD, and Quick charge applications
TSOP6 package
2.3 Control features
Adaptive gate drive for fast turn-off at the end of conduction
UnderVoltage LockOut (UVLO) with active gate pull-down
TEA1993TS
NXP Semiconductors
GreenChip synchronous rectifier controller
3. Applications
The TEA1993TS is intended for flyback power supplies. In such applications, it can drive
the external synchronous rectifier MOSFET, which replaces the diode for the rectification
of the voltage on the secondary winding of the transformer.
It can be used in all power supplies needing high efficiency, like:
Chargers
Adapters
Flyback power supplies with very low and/or variable output voltage
4. Ordering information
Table 1.
Ordering information
Type number
TEA1993TS/N1
Package
Name
Description
Version
TSOP6
plastic surface-mounted package; 6 leads
SOT457
5. Block diagram
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Fig 1.
TEA1993TS
Product data sheet
Block diagram
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TEA1993TS
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GreenChip synchronous rectifier controller
6. Pinning information
6.1 Pinning
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Fig 2.
TEA1993TS pin configuration (SOT457)
6.2 Pin description
Table 2.
TEA1993TS
Product data sheet
Pin description
Symbol
Pin
Description
CAP
1
capacitor input for internal supply voltage
GND
2
ground
XV
3
external supply input
GATE
4
gate driver output for SR MOSFET
SOURCE
5
source sense input of SR MOSFET
DRAIN
6
drain sense input of SR MOSFET
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Rev. 1 — 31 May 2016
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TEA1993TS
NXP Semiconductors
GreenChip synchronous rectifier controller
7. Functional description
7.1 Introduction
The TEA1993TS is a controller IC for Synchronous Rectification (SR) in flyback
applications. It can drive the external synchronous rectifier MOSFET for the rectification of
the voltage on the secondary winding of the transformer. Figure 3 shows a typical
configuration.
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Fig 3.
TEA1993TS configuration with low-side rectification
7.2 Start-up and UnderVoltage LockOut (UVLO; CAP and XV pins)
The capacitor on the CAP pin supplies the TEA1993TS. It is charged via the DRAIN pin
when the XV voltage is < 4.7 V. The charge current (Ich(CAP)) charges the capacitor to 4 V.
It stops charging when this voltage is reached. If the external voltage exceeds 4.7 V, the
XV pin increases the capacitor voltage via an integrated diode. The increase of the
capacitor voltage gives a higher gate driver voltage (VG(max)).
When the voltage on the CAP pin exceeds Vstart(CAP) (3.7 V typical), the IC leaves the
UVLO state and activates the synchronous rectifier circuitry. When the voltage drops
below 3.6 V (typical), the UVLO state is reentered and the SR MOSFET gate driver output
is actively kept low.
7.3 Drain sense (DRAIN pin)
The drain sense pin is an input pin capable of handling input voltages up to 120 V. At
positive drain sense voltage, the gate driver is in off-mode with the gate driver pulled down
(pin GATE). At negative drain sense voltage, the IC enables the Synchronous
Rectification (SR) by sensing the drain source differential voltage.
TEA1993TS
Product data sheet
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TEA1993TS
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GreenChip synchronous rectifier controller
7.4 Synchronous rectification (DRAIN and SOURCE pins)
The IC senses the voltage difference between the drain sense (DRAIN pin) and the
source sense (SOURCE pin) connections. This drain source differential voltage of the SR
MOSFET is used to drive the gate of the SR MOSFET.
In the regulation phase, the IC regulates the difference between the drain and the source
sense inputs to an absolute level of 37 mV. When the absolute difference exceeds 37 mV
(Vreg(drv)), the gate driver output increases the gate voltage of the external SR MOSFET
until the 37 mV level has been reached. The SR MOSFET does not switch off at low
current. To avoid that the device switches off because of ringing, a minimum on-time of
1.5 s (ttact(sr)(min)) has been integrated.
When the absolute difference is < 30 mV, the gate driver output decreases the gate
voltage of the external SR MOSFET. The voltage waveform on the gate of the SR
MOSFET follows the waveform of the current through the SR MOSFET. When the current
through the SR MOSFET reaches zero, the SR MOSFET is switched off quickly.
After SR MOSFET switch-off, the drain voltage increases. When the drain voltage
exceeds 300 mV, a low ohmic gate pull-down of 7 keeps the gate of the SR MOSFET
switched off.
7.5 Gate driver (GATE pin)
The gate driver circuit charges the gate of the external SR MOSFET during the rising part
of the current. The driver circuit discharges the gate during the falling part of the current.
The gate driver has a source capability of typically 0.50 A and a sink capability of typically
0.65 A, allowing fast turn-on and fast turn-off of the external SR MOSFET.
The maximum output voltage of the driver is limited to 12 V. This high output voltage
drives all MOSFET brands to the minimum on-state resistance. In applications where the
IC is supplied with 5 V the maximum output voltage of the driver is 4.2 V and logic level
SR MOSFETs can be used (see Figure 4).
The IC is self-supplying in applications with high-side rectification or in battery charging
applications with an output voltage below 4.7 V. When the XV pin is connected to ground
for driving standard SR MOSFETs, the driver is regulated to 9 V. When the XV pin is
connected to the converter output for driving logic-level SR MOSFETs, the driver is
regulated to 4 V if the output voltage is below 4.7 V.
TEA1993TS
Product data sheet
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Rev. 1 — 31 May 2016
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TEA1993TS
NXP Semiconductors
GreenChip synchronous rectifier controller
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Fig 4.
Maximum gate voltage VG(max)
During start-up conditions (VCAP < Vstart(CAP)) and UVLO, the driver output voltage is
actively pulled low.
7.6 Source sense (SOURCE pin)
The IC is equipped with an additional source sense pin (SOURCE). This pin is used for
measuring the drain-to-source voltage of the external SR MOSFET. The source sense
input must be connected as close as possible to the SOURCE pin of the external SR
MOSFET. It minimizes errors, caused by voltage differences on PCB tracks due to
parasitic inductance in combination with large dI/dt values.
TEA1993TS
Product data sheet
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Rev. 1 — 31 May 2016
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TEA1993TS
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GreenChip synchronous rectifier controller
8. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are measured
with respect to ground (pin 2); positive currents flow into the chip. Voltage ratings are valid provided
other ratings are not violated; current ratings are valid provided the other ratings are not violated.
Symbol
Parameter
Conditions
Min
Max
Unit
Voltages
VXV
voltage on pin XV
0.4
+38
V
Vsense(DRAIN)
sense voltage on pin DRAIN
0.8
+120
V
Vsense(SOURCE)
sense voltage on pin
SOURCE
0.4
+0.4
V
Ptot
total power dissipation
-
0.2
W
Tstg
storage temperature
55
+150
C
Tj
junction temperature
40
+150
C
-
2000
V
-
500
V
General
ElectroStatic Discharge (ESD)
VESD
electrostatic discharge
voltage
class 2
human body model
charged device
model
[1]
[1]
Equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor.
9. Thermal characteristics
Table 4.
TEA1993TS
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction
to ambient
JEDEC test board
200
K/W
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TEA1993TS
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GreenChip synchronous rectifier controller
10. Characteristics
Table 5.
Characteristics
25 C < Tj < +125 C; Vxv = 12 V; CCAP = 1 F; CGATE = 10 nF (capacitor between the GATE and the GND pins); all voltages
are measured with respect to ground (pin 2); currents are positive when flowing into the IC; unless otherwise specified.
Limits are production tested at 25 C. Statistical characterization in the temperature operating range ensure these limits.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Supply voltage management (XV and CAP pins)
Vstart(CAP)
start voltage on pin CAP
VXV = 0 V
3.55
3.7
3.9
V
Vstop(CAP)
stop voltage on pin CAP
VXV = 0 V
3.45
3.6
3.8
V
Ich(CAP)
charge current on pin CAP
VXV = 0 V; VCAP = 7 V;
VDRAIN = 12 V;
Tj = 25 C
95
70
50
mA
VXV = 2 V;
VCAP = 3.65 V;
VDRAIN = 12 V;
Tj = 25 C
95
70
50
mA
VXV = 0 V;
VDRAIN = 12 V
8.70
9.20
9.60
V
VXV = 2 V;
VDRAIN = 12 V
3.80
4.00
4.15
V
VXV = 5 V
4.15
4.30
4.75
V
VI(CAP)
II(XV)
input voltage on pin CAP
input current on pin XV
VXV = 12 V
11.0
11.30
11.70
V
power save operation;
VXV = 5 V
90
160
250
A
normal operation;
without gate charge;
VXV = 5 V; Tj = 25 C
1.35
1.60
1.85
mA
70
100
140
s
tact(pwrsave) power-save activation time
Synchronous rectification sense input (DRAIN and SOURCE pins)
Vreg(drv)
driver regulation voltage
VSOURCE = 0 V;
Tj = 25 C
40
37
35
mV
Vswoff
switch-off voltage
VSOURCE = 0 V;
Tj = 25 °C
200
300
400
mV
td(act)(drv)
driver activation delay time
VSOURCE = 0 V;
normal operation;
time for step-on
VDRAIN (2 V to 0.5 V)
to rising of VGATE at
10 % of end value
-
65
-
ns
VSOURCE = 0 V;
normal operation;
time for step-on
VDRAIN (0.5 V to 2 V)
to falling of VGATE at
90 % of begin value
-
40
-
ns
VXV = VCAP = 5 V;
Tj = 25 C
1.20
1.5
1.80
s
td(deact)(drv) driver deactivation delay time
tact(sr)(min)
minimum synchronous
rectification active time
TEA1993TS
Product data sheet
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TEA1993TS
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GreenChip synchronous rectifier controller
Table 5.
Characteristics …continued
25 C < Tj < +125 C; Vxv = 12 V; CCAP = 1 F; CGATE = 10 nF (capacitor between the GATE and the GND pins); all voltages
are measured with respect to ground (pin 2); currents are positive when flowing into the IC; unless otherwise specified.
Limits are production tested at 25 C. Statistical characterization in the temperature operating range ensure these limits.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VXV = 5 V;
Vds = 0.5 V; Vg = 0 V
-
0.13
-
A
VXV = 12 V;
Vds = 0.5 V; Vg = 0 V
-
0.50
-
A
VXV = 5 V;
Vds = 0 V; Vg = 4 V
-
150
-
mA
VXV = 12 V;
Vds = 0 V; Vg = 10 V
-
210
-
mA
VXV = 5 V;
Vds = 4 V; Vg = 4 V
-
0.35
-
A
VXV = 12 V;
Vds = 4 V; Vg = 4 V
-
0.65
-
A
Gate driver (GATE pin)
Isource
Isink
source current
sink current
peak current
regulation current
peak current
Rpd(G)
gate pull-down resistance
VDRAIN = 4 V;
IGATE = 30 mA;
VXV = 12 V; Tj = 25 C
6.00
6.80
7.60
VG(max)
maximum gate voltage
VXV = 0 V
7.80
8.90
9.60
V
VXV = 2 V
3.75
3.95
4.15
V
VXV = 5 V
4.00
4.20
4.40
V
VXV = VCAP = 5 V
4.90
4.95
5.00
V
VXV = 12 V
9.40
9.80
10.70
V
VXV = 18 V to 38 V
11.80
12.30
12.70
V
TEA1993TS
Product data sheet
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TEA1993TS
NXP Semiconductors
GreenChip synchronous rectifier controller
10.1 Temperature curves
10.1.1 Charge current (pin CAP)
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(2) Ich(CAP) at VCAP = 3.65 V
Fig 5.
Ich(CAP) as a function of temperature
10.1.2 Operating current (pin XV)
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(2) II(XV) - normal operation
Fig 6.
TEA1993TS
Product data sheet
II(XV) as a function of temperature
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TEA1993TS
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GreenChip synchronous rectifier controller
10.1.3 Driver regulation voltage
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DDD
Vreg(drv) as a function of temperature
10.1.4 Gate pull-down resistance
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Fig 8.
TEA1993TS
Product data sheet
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Rpd(G) as a function of temperature
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TEA1993TS
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GreenChip synchronous rectifier controller
10.1.5 Switch-off voltage
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Vswoff as a function of temperature
10.1.6 Minimum synchronous rectification active time
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Fig 10. tact(sr)min as a function of temperature
TEA1993TS
Product data sheet
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Rev. 1 — 31 May 2016
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TEA1993TS
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GreenChip synchronous rectifier controller
11. Application information
A flyback switched mode power supply with the TEA1993TS consists of a primary side
controller with a primary switch, a transformer, and an output stage. To obtain low
conduction loss rectification, an SR MOSFET is used in the output stage. The SR
MOSFET can be placed low-side (see Figure 3) or can be placed high-side
(see Figure 11). In the high-side application, the TEA1993TS is self-supplying. The
capacitor on the CAP pin supplies the TEA1993TS. When the drain voltage is positive, it is
charged via the DRAIN pin.
The gate drive voltage for the synchronous rectifier switch is derived from the voltage
difference between the corresponding drain sense and source sense pins.
Special attention must be paid to the connection of the drain sense and source sense
pins. The voltages measured on these pins are used for the gate drive voltage. Wrong
measurement results in a less efficient gate drive because a gate voltage that is either too
low or too high. The connections to these pins must not interfere with the power wiring.
The power wiring conducts currents with high dI/dt values. It can easily cause
measurement errors resulting from induced voltages due to parasitic inductances. The
separate source sense pins make it possible to sense the source voltage of the external
MOSFETs directly. So, the current carrying power ground tracks are not required.
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Fig 11. TEA1993TS configuration with high-side rectification
TEA1993TS
Product data sheet
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Rev. 1 — 31 May 2016
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TEA1993TS
NXP Semiconductors
GreenChip synchronous rectifier controller
12. Package outline
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TEA1993TS
Product data sheet
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Rev. 1 — 31 May 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
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GreenChip synchronous rectifier controller
13. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
TEA1993TS v.1
20160531
Product data sheet
-
-
TEA1993TS
Product data sheet
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TEA1993TS
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GreenChip synchronous rectifier controller
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
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deemed to offer functions and qualities beyond those described in the
Product data sheet.
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
TEA1993TS
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
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malfunction of an NXP Semiconductors product can reasonably be expected
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Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
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Customers are responsible for the design and operation of their applications
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
GreenChip — is a trademark of NXP B.V.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
TEA1993TS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 May 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
17 of 18
TEA1993TS
NXP Semiconductors
GreenChip synchronous rectifier controller
16. Contents
1
2
2.1
2.2
2.3
3
4
5
6
6.1
6.2
7
7.1
7.2
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Efficiency features . . . . . . . . . . . . . . . . . . . . . . 1
Application features . . . . . . . . . . . . . . . . . . . . . 1
Control features . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 4
Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Start-up and UnderVoltage LockOut
(UVLO; CAP and XV pins) . . . . . . . . . . . . . . . . 4
7.3
Drain sense (DRAIN pin) . . . . . . . . . . . . . . . . . 4
7.4
Synchronous rectification
(DRAIN and SOURCE pins) . . . . . . . . . . . . . . . 5
7.5
Gate driver (GATE pin) . . . . . . . . . . . . . . . . . . . 5
7.6
Source sense (SOURCE pin) . . . . . . . . . . . . . . 6
8
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 7
9
Thermal characteristics . . . . . . . . . . . . . . . . . . 7
10
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8
10.1
Temperature curves . . . . . . . . . . . . . . . . . . . . 10
10.1.1
Charge current (pin CAP) . . . . . . . . . . . . . . . . 10
10.1.2
Operating current (pin XV) . . . . . . . . . . . . . . . 10
10.1.3
Driver regulation voltage. . . . . . . . . . . . . . . . . 11
10.1.4
Gate pull-down resistance . . . . . . . . . . . . . . . 11
10.1.5
Switch-off voltage . . . . . . . . . . . . . . . . . . . . . . 12
10.1.6
Minimum synchronous rectification
active time . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11
Application information. . . . . . . . . . . . . . . . . . 13
12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
14.1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
14.2
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14.3
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14.4
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
15
Contact information. . . . . . . . . . . . . . . . . . . . . 17
16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2016.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 31 May 2016
Document identifier: TEA1993TS