Si7390DP_RC

Si7390DP_RC
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Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have been
derived using curve-fitting techniques. R-C values for the
electrical circuit in the Foster/tank and Cauer/filter
configurations are included. When implemented in PSpice,
these values have matching characteristic curves to the
single-pulse transient thermal impedance curves for the
MOSFET.
These RC values can be used in the PSpice simulation to
evaluate the thermal behavior of the MOSFET junction
temperature under a defined power profile. These
techniques are described in application note AN609,
“Thermal Simulation of Power MOSFETs on the PSpice
Platform”.
R-C THERMAL MODEL FOR TANK CONFIGURATION
T (Junction)
RT1
RT2
RT3
RT4
CT1
CT2
CT3
CT4
T (Ambient)
R-C VALUES FOR TANK CONFIGURATION
THERMAL RESISTANCE (°C/W)
Junction to
Ambient
Case
RT1
2.0964
18.1043u
Foot
n/a
RT2
9.0489
711.4848m
n/a
RT3
8.0177
1.3099
n/a
RT4
50.6167
1.1888
n/a
Junction to
Ambient
Case
CT1
24.2346m
81.2329u
n/a
CT2
558.4598m
674.3100u
n/a
CT3
70.7118m
14.2244m
n/a
CT4
1.4427
6.7181m
n/a
THERMAL CAPACITANCE (Joules/°C)
Foot
Note
• n/a indicates not applicable
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Revision: 26-May-15
1
Document Number: 73612
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7390DP_RC
www.vishay.com
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
T (Junction)
RF2
RF1
CF1
RF3
CF2
RF4
T (Ambient)
CF4
CF3
GND
R-C VALUES FOR FILTER CONFIGURATION
THERMAL RESISTANCE (°C/W)
Junction to
Ambient
Case
RF1
6.2277
64.6207m
Foot
n/a
RF2
7.9322
842.6365m
n/a
RF3
7.6428
1.2521
n/a
RF4
47.9015
1.0208
n/a
Junction to
Ambient
Case
Foot
CF1
16.9227m
211.8576u
n/a
CF2
156.4462m
396.2589u
n/a
CF3
2.8690m
4.9103m
n/a
CF4
1.2888
306.6355u
n/a
THERMAL CAPACITANCE (Joules/°C)
Note
• n/a indicates not applicable
Revision: 26-May-15
2
Document Number: 73612
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7390DP_RC
www.vishay.com
Revision: 26-May-15
Vishay Siliconix
3
Document Number: 73612
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000