Preliminary 03.02.03 Features F0100613B • Low voltage of +5.0V single power supply • 1.5kΩ high transimpedance • Typical 7.5GHz broad bandwidth • 29dB high gain • Over 20dB wide dynamic range • Differential output 10Gb/s Receiver Transimpedance Amplifier Applications • Preamplifier of an optical receiver circuit for OC-192/STM-64(10Gb/s) Functional Description The F0100613B is a stable GaAs integrated transimpedance amplifier capable of 29dB gain at a typical 7.5GHz 3dB-cutoff-frequency, making it ideally suited for a 10Gb/s optical receiver circuit, for example, OC-192/STM-64, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100613B typically specifies a high transimpedance of 1.5kΩ (RL=50Ω) with a wide dynamic range of over 20dB. Furthermore, it can operate with a supply voltage of single +5.0V. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier cannot operate with the maximum performance owing to parasitic capacitance of the package. The F0100613B and F0100614B are various in pad assignment. F0100613B 10Gb/s Transimpedance Amplifier Absolute Maximum Ratings Ta=25°C, unless specified Parameter Symbol Value Units Supply Voltage VDD -0.5 to +7.0V V Supply Current IDD 100 mA Ambient Operating Temperature Ta -40 to +90 °C Storage Temperature Tstg -55 to +125 °C Recommended Operating Conditions Ta=25°C, VDD=+5.0V unless specified Parameter Value Symbol Unit MIN. TYP. MAX. VDD 4.75 5.00 5.25 V Ta 0 25 85 °C Photodiode Capacitance CPD 0.20 0.225 0.25 pF Input bond wire inductance LIN 0.2 0.4 0.6 nH Supply Voltage Ambient Operating Temperature Electrical Characteristics Ta=25°C, VDD=+5.0V unless specified Parameters Symbol Value Test Conditions Units MIN. TYP. MAX Supply Current IDD DC - 65 - mA Gain S21 PIN=-30dBm f=1GHz, RL=50Ω - 29 - dB -3dB High Frequency Cut-off FCh PIN=-30dBm RL=50Ω - 7.5 - GHz Input Impedance RI f =1GHz - 55 - Ω Transimpedance ZT f =1GHz - 1.5 - kΩ Output Voltage VO DC - 3.4 - V Input Voltage VI DC - 1.0 - V -3dB Low Frequency Cut-off FCl Cout=1000pF 60 kHz F0100613B 10Gb/s Transimpedance Amplifier Block Diagram VDD OUTP Level Shift Buffer OUTN IN GND CAP Cout Die Pad Description VDD Supply Voltage GND Ground IN Input OUTP Output (positive) OUTN Output (negative) CAP Connect outer Capacitance F0100613B 10Gb/s Transimpedance Amplifier Die Pad Assignment A 11 10 9 12 8 13 7 920um 6 1 2 3 5 4 O 1050um No. Symbol Center Coordinates (um) No. Symbol Center Coordinates (um) 1 GND (70,177.5) 10 OUTP (685,780) 2 VDD (220,70) 11 CAP (70,780) 3 VDD (430,70) 12 GND (70,602.5) 4 OUTN (685,70) 13 IN (70,425) 5 GND (910,92.5) 6 OUTN (910,265) 7 GND (910,425) 8 OUTP (910,585) O (0,0) 9 GND (910,757.5) A (980,850) F0100613B 10Gb/s Transimpedance Amplifier Test Circuits 1) AC Characteristics Network Analyzer 50Ω 50Ω VDD Pin=-20dBm f=130MHz∼20GHz OUTP IN DUT OUTN 50Ω Prober 2) Sensitivity Characteristics VPD 5V 0.022uF E/O Optical Converter Attenuator VDD PD Pulse Pattern CLK DUT 0.022uF Generator Post Amp. Bit Error Rate Tester 5V 0.022uF F0100613B 10Gb/s Transimpedance Amplifier General Description A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration. Recommendation Noise Performance The F0100613B based on GaAs FET’s shows excellent low-noise characteristics compared with IC’s based on the silicon bipolar process. Many transmission systems often demand superior signal-to-noise ratio, that is, high sensitivity; F0100613B is the best choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available. F0100613B 10Gb/s Transimpedance Amplifier Die-Chip Description The F0100613B is shipped like the die-chip described above. The die thickness is typically 280um ± 20um with the available pad size uncovered by a passivation film of 75um square.The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au. Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wire-pull and die-share strength. The heating time of one minute at the temperature of 310°C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150°C by a ball-bonding machine is effective. Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owning to die-shipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI’s authorized rules. A microscope inspection is conducted in conformance with the MIL-STD-883C Method 2010.7. Precautions Owing to their small dimensions, the GaAs FET’s from which the F0100613B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment.