R6008FNJ Datasheet Nch 600V 8A Power MOSFET Outline VDSS 600V RDS(on) (Max.) 0.95 ID 8A PD 119W LPTS (SC-83) (2) (1) (3) Features Inner circuit (2) 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source *1 (1) 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. (3) 6) Pb-free lead plating ; RoHS compliant Packaging specifications Packaging Application Taping Reel size (mm) 330 Tape width (mm) 24 Type Basic ordering unit (pcs) Switching Power Supply 1,000 TL Taping code R6008FNJ Marking Absolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 600 V Tc = 25°C ID *1 8 A Tc = 100°C ID *1 3.9 A ID,pulse *2 32 A Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 4.3 mJ Avalanche energy, repetitive EAR *4 3.4 mJ Avalanche current IAR *3 4 A Power dissipation (Tc = 25°C) PD 119 W Junction temperature Tj 150 °C Tstg 55 to 150 °C dv/dt *5 15 V/ns Drain - Source voltage Continuous drain current Pulsed drain current Range of storage temperature Reverse diode dv/dt www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/13 2016.02 - Rev.C Data Sheet R6008FNJ Absolute maximum ratings Symbol Parameter Conditions Values Unit 50 V/ns VDS = 480V, ID = 8A Drain - Source voltage slope dv/dt Tj = 125°C Thermal resistance Values Symbol Parameter Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 1.05 °C/W Thermal resistance, junction - ambient RthJA - - 80 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C Electrical characteristics(Ta = 25°C) Values Parameter Symbol Unit Conditions Min. Typ. Max. 600 - - V - 700 - V Tj = 25°C - 1 100 Tj = 125°C - - 10 mA IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 2.0 - 4.0 V Tj = 25°C - 0.73 0.95 Tj = 125°C - 1.62 - f = 1MHz, open drain - 8.0 - Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 8A VDS = 600V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS A VGS = 10V, ID = 4A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. RDS(on) RG *6 2/13 2016.02 - Rev.C Data Sheet R6008FNJ Electrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. 2.5 5.0 - Transconductance gfs *6 VDS = 10V, ID = 4.0A, Input capacitance Ciss VGS = 0V - 580 - Output capacitance Coss VDS = 25V - 450 - Reverse transfer capacitance Crss f = 1MHz - 25 - Effective output capacitance, energy related Co(er) - 31.5 - Effective output capacitance, time related Turn - on delay time VGS = 0V VDS = 0V to 480V Co(tr) td(on) *6 tr *6 Rise time Turn - off delay time Fall time *6 td(off) tf *6 S pF pF - 31.8 - VDD ⋍ 300V, VGS = 10V - 20 - ID = 4A - 25 - RL = 75 - 60 120 RG = 10 - 30 60 ns Gate Charge characteristics(Ta = 25°C) Values Parameter Symbol Total gate charge Qg *6 Gate - Source charge Qgs Gate - Drain charge Qgd *6 Gate plateau voltage V(plateau) *6 Conditions Unit Min. Typ. Max. VDD ⋍ 300V - 20 - ID = 8A - 5 - VGS = 10V - 10 - VDD ⋍ 300V, ID = 8A - 5.7 - nC V *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L ⋍ 500H, VDD = 50V, RG = 25, starting T j = 25°C *4 L ⋍ 500H, VDD = 50V, RG = 25, starting T j = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/13 2016.02 - Rev.C Data Sheet R6008FNJ Body diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Symbol Inverse diode continuous, forward current Conditions Unit IS *1 Min. Typ. Max. - - 8 A - - 32 A - - 1.5 V - 67 - ns - 0.17 - C - 4.9 - A - 610 - A/s Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *6 VGS = 0V, IS = 8A trr *6 Reverse recovery time *6 Reverse recovery charge Qrr Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt IS = 8A di/dt = 100A/us Tj = 25°C Typical Transient Thermal Characteristics Symbol Value Rth1 0.118 Rth2 0.472 Rth3 0.583 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Unit Cth1 0.0014 Cth2 0.00402 Cth3 0.174 Ws/K 2016.02 - Rev.C Data Sheet R6008FNJ Electrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 100 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 20 Operation in this area is limited by RDS(ON) PW = 100us 1 PW = 1ms 0.1 PW = 10ms Ta = 25ºC Single Pulse 0.01 0 0 50 100 150 0.1 200 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 10 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 80ºC/W 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.001 0.0001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/13 2016.02 - Rev.C Data Sheet R6008FNJ Electrical characteristic curves Fig.4 Avalanche Current vs Inductive Load Fig.5 Avalanche Power Losses 6 5000 Ta = 25ºC VDD = 50V , RG = 25 VGF = 10V , VGR = 0V 4500 Avalanche Power Losses : PAR [W] Avalanche Current : IAR [A] 5 4 3 2 1 0 0.01 0.1 1 10 100 Coil Inductance : L [mH] Ta = 25ºC 4000 3500 3000 2500 2000 1500 1000 500 0 1.0E+04 1.0E+05 1.0E+06 Frequency : f [Hz] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 6/13 2016.02 - Rev.C Data Sheet R6008FNJ Electrical characteristic curves Fig.8 Typical Output Characteristics(II) Fig.7 Typical Output Characteristics(I) 8.0 8 7.0 VGS=10.0V VGS=10.0V Drain Current : ID [A] 6 VGS=6.0V 5.0 Ta=25℃ pulsed 7 VGS=7.0V 6.0 Drain Current : ID [A] Ta=25℃ pulsed VGS=5.0V 4.0 3.0 2.0 VGS=4.5V 1.0 VGS=7.0V 5 VGS=6.0V 4 VGS=5.0V 3 2 VGS=4.5V 1 0.0 0 0 10 20 30 40 50 0 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.10 Tj = 150°C Typical Output Characteristics(II) Fig.9 Tj = 150°C Typical Output Characteristics(I) 4 8 VGS = 10V Ta = 150ºC Pulsed 7 VGS = 7.0V 6 VGS = 5.5V VGS = 10V VGS = 6.0V Drain Current : ID [A] Drain Current : ID [A] 1 5 VGS = 5.0V 4 3 2 VGS = 4.5V 1 Ta = 150ºC Pulsed 0 VGS = 7.0V VGS = 6.0V 2 VGS = 5.0V VGS = 4.5V 0 0 10 20 30 40 50 0 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 7/13 2016.02 - Rev.C Data Sheet R6008FNJ Electrical characteristic curves Fig.12 Typical Transfer Characteristics 900 100 VDS = 10V Pulsed 850 10 Drain Current : ID [A] 800 750 700 650 600 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 1 0.1 0.01 550 500 0.001 -50 0 50 100 150 0.0 1.5 Junction Temperature : Tj [°C] 3.0 4.5 6.0 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 6 10 5 VDS = 10V ID = 1mA VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] Drain - Source Breakdown Voltage : V(BR)DSS [V] Fig.11 Breakdown Voltage vs. Junction Temperature 4 3 2 1 0 -50 0 50 100 Junction Temperature : Tj [°C] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 0.1 0.01 0.01 150 Ta = 25ºC Ta = 25ºC Ta = 75ºC Ta = 125ºC 0.1 1 10 100 Drain Current : ID [A] 8/13 2016.02 - Rev.C Data Sheet R6008FNJ Electrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 3 Ta = 25ºC Pulsed 1.5 ID= 8.0A 1 ID= 4.0A 0.5 0 0 5 10 15 Static Drain - Source On-State Resistance : RDS(on) [] Static Drain - Source On-State Resistance : RDS(on) [] 2 Gate - Source Voltage : VGS [V] 2.5 VGS = 10V Pulsed 2 1.5 ID= 8.0A 1 ID= 4.0A 0.5 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [] 10 VGS = 10V Pulsed 1 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 0.1 0.1 1 10 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/13 2016.02 - Rev.C Data Sheet R6008FNJ Electrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy 10000 6 Ciss 1000 Capacitance : C [pF] Coss Stored Energy : EOSS [uJ] Ta = 25ºC Coss 100 Crss 10 Ta= 25℃ f= 1MHz VGS= 0V 1 4 2 0 0.01 0.1 1 10 100 1000 0 Drain - Source Voltage : VDS [V] 400 600 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics Fig.20 Switching Characteristics 15 10000 tf Gate - Source Voltage : VGS [V] Ta= 25℃ VDD= 300V VGS= 10V RG= 10 1000 Switching Time : t [ns] 200 100 td(off) 10 td(on) tr 1 10 5 Ta= 25℃ VDD= 300V ID= 8.0A Pulsed 0 0.1 1 10 0 100 20 30 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10 10/13 2016.02 - Rev.C Data Sheet R6008FNJ Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 100 1000 VGS= 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] Electrical characteristic curves 10 1 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 0.1 Ta= 25℃ di / dt= 100A / s VGS= 0V Pulsed 100 10 0.01 0 0.5 1 1.5 0.1 2 Source - Drain Voltage : VSD [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 10 100 Inverse Diode Forward Current : IS [A] 11/13 2016.02 - Rev.C Data Sheet R6008FNJ Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2 Switching Waveforms Pulse width ID VDS RL D.U.T. 50% 10% VDD RG 90% 50% 10% VGS VDS 10% 90% td(on) 90% td(off) tr ton Fig.2-1 Gate Charge Measurement Circuit VGS toff Fig.2-2 Gate Charge Waveform VG ID VDS Qg RL VGS D.U.T. IG(Const.) tf Qgs VDD Qgd Charge Fig.3-1 Avalanche Measurement Circuit VGS IAS Fig.3-2 Avalanche Waveform VDS L D.U.T. V(BR)DSS IAS RG VDD VDD EAS = Fig.4-1 dv/dt Measurement Circuit VGS IAS 1 2 V(BR)DSS V(BR)DSS - VDD 2 L IAS Fig.4-2 dv/dt Waveform VDS L D.U.T. V(BR)DSS RG IAS VDD VDD Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform IF D.U.T. IF L trr 0 VDD RG Irr 10% DRIVER MOSFET Irr drr / dt Irr 90% Irr 100% www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 12/13 2016.02 - Rev.C Data Sheet R6008FNJ Dimensions (Unit : mm) D A2 A B L2 c1 E L3 LPTS H A1 L4 Lp b2 e b L1 L b3 x c A3 B A l3 l1 e b6 b5 l2 Patterm of terminal position areas DIM A1 A2 A3 b b2 b3 c c1 D E e HE L L1 L2 L3 L4 Lp x DIM b5 b6 l1 l2 l3 MILIMETERS MIN MAX 0.00 0.30 4.30 4.70 0.25 0.68 0.98 8.90 1.14 1.44 0.30 0.60 1.10 1.50 9.80 10.40 8.80 9.20 2.54 12.80 13.40 2.70 3.30 0.90 1.50 1.10 7.25 1.00 0.90 1.50 0.25 MILIMETERS MIN MAX 1.23 10.40 2.10 7.55 13.40 INCHES MIN 0 0.169 MAX 0.012 0.185 0.01 0.027 0.039 0.35 0.045 0.012 0.043 0.386 0.346 0.057 0.024 0.059 0.409 0.362 0.10 0.504 0.106 0.035 0.528 0.13 0.059 0.043 0.285 0.039 0.035 - 0.059 0.01 INCHES MIN - MAX 0.049 0.409 0.083 0.297 0.528 Dimension in mm/inches www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 13/13 2016.02 - Rev.C Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you (Note 1) intend to use our Products in devices requiring extremely high reliability (such as medical equipment , transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PGA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.003 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice-PGA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.003