RCJ160N20 Nch 200V 16A Power MOSFET Datasheet lOutline VDSS 200V RDS(on) (Max.) 180mW ID 16A PD 40W lFeatures (2) LPT(S) (SC-83) TO-263(D2PAK) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging lApplication Switching Power Supply Taping Reel size (mm) 330 Tape width (mm) 24 Type Automotive Motor Drive Basic ordering unit (pcs) Automotive Solenoid Drive Taping code 1,000 TL Marking RCJ160N20 lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 200 V Tc = 25°C ID *1 16 A Tc = 100°C ID *1 8.7 A 64 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 20.7 mJ Avalanche current IAR *3 8.0 A Tc = 25°C PD 40 W Ta = 25°C *4 PD 1.56 W Tj 150 °C Tstg -55 to +150 °C Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/12 2012.09 - Rev.A Data Sheet RCJ160N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 3.13 °C/W Thermal resistance, junction - ambient *4 RthJA - - 80 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics(Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions VGS = 0V, ID = 1mA Unit Min. Typ. Max. 200 - - - - 10 V VDS = 200V, VGS = 0V Zero gate voltage drain current IDSS Tj = 25°C mA VDS = 200V, VGS = 0V - - 100 Tj = 125°C Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 3.25 - 5.25 V VGS = 10V, ID = 8.0A - 135 180 - 295 410 4 8 - RDS(on) *5 VGS = 10V, ID = 8.0A mW Tj = 125°C Forward transfer admittance www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. gfs VDS = 10V, ID = 8.0A 2/12 S 2012.09 - Rev.A Data Sheet RCJ160N20 lElectrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 1370 - Output capacitance Coss VDS = 25V - 95 - Reverse transfer capacitance Crss f = 1MHz - 50 - VDD ⋍ 100V, VGS = 10V - 27 - ID = 8.0A - 47 - RL = 12.5W - 42 - RG = 10W - 17 - Turn - on delay time td(on) *5 tr *5 Rise time Turn - off delay time td(off) *5 tf *5 Fall time pF ns lGate Charge characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *5 VDD ⋍ 100V - 26 - Gate - Source charge Qgs *5 ID = 16A - 10 - Gate - Drain charge Qgd VGS = 10V - 11 - VDD ⋍ 100V, ID = 16A - 7.0 - Gate plateau voltage *5 V(plateau) nC V lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Continuous source current Symbol IS *1 Pulsed source current ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 Reverse recovery charge Qrr *5 Conditions Unit Min. Typ. Max. - - 16 A - - 64 A VGS = 0V, IS = 16A - - 1.5 V IS = 8.0A di/dt = 100A/ms - 85 - ns - 300 - nC Tc = 25°C *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 L ⋍ 500mH, VDD = 50V, Rg = 25W, starting Tj = 25°C *4 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm) *5 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/12 2012.09 - Rev.A Data Sheet RCJ160N20 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 120 100 PW = 1ms 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] PW = 100ms 80 60 40 1 Operation in this area is limited by RDS(on) 0.1 20 PW = 10ms Ta=25ºC Single Pulse 0.01 0 0 25 50 75 100 125 150 0.1 175 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta=25ºC Single Pulse Rth(j-c)(t) = r(t)×Rth(ch-c) Rth(j-c) = 80ºC/W 1 0.1 0.01 0.0001 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/12 2012.09 - Rev.A Data Sheet RCJ160N20 lElectrical characteristic curves Fig.5 Avalanche Energy Derating Curve vs Junction Temperature Fig.4 Avalanche Current vs Inductive Load 120 100 Avalanche Energy : EAS / EAS max. [%] Avalanche Current : IAS [A] VDD=50V,RG=25W VGF=10V,VGR=0V Starting Tch=25ºC 10 1 0.1 0.01 0.1 1 10 100 80 60 40 20 0 0 100 Coil Inductance : L [mH] 50 75 100 125 150 175 Junction Temperature : Tj [°C] Fig.7 Typical Output Characteristics(II) Fig.6 Typical Output Characteristics(I) 8 16 VGS=10.0V Ta=25ºC Pulsed 14 12 Drain Current : ID [A] VGS=8.0V VGS=7.0V 4 Ta=25ºC Pulsed VGS=8.0V VGS=10.0V 6 Drain Current : ID [A] 25 2 VGS=6.0V 10 8 VGS=7.0V 6 4 VGS=5.0V VGS=6.0V 2 VGS=5.0V 0 0 0 0.2 0.4 0.6 0.8 1 0 4 6 8 10 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2 5/12 2012.09 - Rev.A Data Sheet RCJ160N20 lElectrical characteristic curves Fig.9 Typical Transfer Characteristics 280 100 VDS= 10V VGS = 0V ID = 1mA 270 260 10 250 Drain Current : ID [A] Normarize Drain - Source Breakdown Voltage : V(BR)DSS [V] Fig.8 Breakdown Voltage vs. Junction Temperature 240 230 220 210 200 1 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.1 0.01 190 180 0.001 -50 0 50 100 150 0 Junction Temperature : Tj [°C] 6 8 10 Fig.11 Transconductance vs. Drain Current 100 5.5 VDS= 10V VDS = 10V ID = 1mA Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature 5.0 2 4.5 4.0 3.5 3.0 0 25 50 75 100 125 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 0.01 0.01 2.5 -50 -25 10 0.1 1 10 100 Drain Current : ID [A] 6/12 2012.09 - Rev.A Data Sheet RCJ160N20 lElectrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 1000 Ta=25ºC 350 300 ID = 8.0A ID = 16A 250 200 150 100 50 0 0 5 10 15 20 Static Drain - Source On-State Resistance : RDS(on) [mW] 400 Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Gate - Source Voltage : VGS [V] Ta=25ºC VGS = 10V 100 10 0.01 0.1 1 10 100 Drain Current : ID [A] Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [mW] 350 300 VGS = 10V ID = 8.0A 250 200 150 100 50 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 7/12 2012.09 - Rev.A Data Sheet RCJ160N20 lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Drain Current Derating Curve 120 VGS= 10V 100 Drain Current Dissipation : ID/ID max. (%) Static Drain - Source On-State Resistance : RDS(on) [mW] 1000 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 80 60 40 20 0 10 0.01 0.1 1 10 0 100 Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 8/12 2012.09 - Rev.A Data Sheet RCJ160N20 lElectrical characteristic curves Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.18 Switching Characteristics 10000 10000 Ta = 25ºC f = 1MHz VGS = 0V tf Ciss 1000 Switching Time : t [ns] Capacitance : C [pF] Ta=25ºC VDD= 100V VGS= 10V RG=10W 1000 100 Coss td(off) 100 td(on) 10 tr Crss 10 1 0.01 0.1 1 10 100 1000 0.01 Drain - Source Voltage : VDS [V] 0.1 1 10 100 Drain Current : ID [A] Fig.19 Dynamic Input Characteristics 20 Ta=25ºC VDD= 100V ID= 16A RG=10W Gate - Source Voltage : VGS [V] 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Total Gate Charge : Qg [nC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 9/12 2012.09 - Rev.A Data Sheet RCJ160N20 lElectrical characteristic curves Fig21 Reverse Recovery Time vs.Source Current Fig.20 Source Current vs. Source - Drain Voltage 1000 100 Ta=25ºC di / dt = 100A / ms VGS = 0V Reverse Recovery Time : trr [ns] VGS=0V Source Current : IS [A] 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0.1 0.01 100 10 0.0 0.5 1.0 1.5 0.1 10 100 Source Current : IS [A] Source-Drain Voltage : VSD [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 10/12 2012.09 - Rev.A Data Sheet RCJ160N20 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 11/12 2012.09 - Rev.A Data Sheet RCJ160N20 lDimensions (Unit : mm) D A2 A B L2 c1 E L3 LPTS H A1 L4 Lp b2 e b L1 L b3 x c A3 B A l3 l1 e b6 b5 l2 Patterm of terminal position areas DIM A1 A2 A3 b b2 b3 c c1 D E e HE L L1 L2 L3 L4 Lp x DIM b5 b6 l1 l2 l3 MILIMETERS MIN MAX 0.00 0.30 4.30 4.70 0.25 0.68 0.98 8.90 1.14 1.44 0.30 0.60 1.10 1.50 9.80 10.40 8.80 9.20 2.54 12.80 13.40 2.70 3.30 0.90 1.50 1.10 7.25 1.00 0.90 1.50 0.25 MILIMETERS MIN MAX 1.23 10.40 2.10 7.55 13.40 INCHES MIN 0 0.169 MAX 0.012 0.185 0.01 0.027 0.039 0.35 0.045 0.012 0.043 0.386 0.346 0.057 0.024 0.059 0.409 0.362 0.10 0.504 0.106 0.035 0.528 0.13 0.059 0.043 0.285 0.039 0.035 - 0.059 0.01 INCHES MIN - MAX 0.049 0.409 0.083 0.297 0.528 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 12/12 2012.09 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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