NVDD5894NL D

NVDD5894NL
Power MOSFET
40 V, 10 mW, 64 A, Dual N−Channel
DPAK−5L
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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RDS(on) Max
V(BR)DSS
40 V
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation RqJC
(Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2 & 3)
TC = 25°C
Steady
State
Pulsed Drain Current
Unit
VDSS
40
V
VGS
"20
V
ID
64
A
TC = 100°C
TC = 25°C
PD
Steady
State
ID
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, IL(pk) = 25 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
G2
W
75
PD
3.8
W
IDM
324
A
TJ, Tstg
−55 to
+175
°C
IS
75
A
EAS
94
mJ
TL
260
°C
1.9
DPAK 5−LEAD
CASE 175AA
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
S2
S1
A
14
10
TA = 100°C
TA = 25°C, tp = 10 ms
D
38
TA = 100°C
TA = 25°C
Dual N−Channel
G1
45
TC = 100°C
TA = 25°C
Power Dissipation RqJA
(Notes 1 & 2)
Value
YWW
58
94LG
Drain−to−Source Voltage
Symbol
64 A
14.5 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID Max
10 mW @ 10 V
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
RqJC
2.0
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
40
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
x
S1 G1 G2 S2
Y
WW
5894L
G
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
NVDD5894NLT4G
Package
Shipping†
DPAK−5 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 0
1
Publication Order Number:
NVDD5894NL/D
NVDD5894NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
VGS = 0 V
VDS = 40 V
V
TJ = 25°C
1
TJ = 125°C
100
mA
IGSS
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
2.5
V
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 50 A
8.3
10
mW
VGS = 4.5 V, ID = 20 A
11.2
14.5
VDS = 15 V, ID = 10 A
8.8
S
2103
pF
±100
nA
ON CHARACTERISTICS (Note 4)
Forward Transconductance
gFS
1.5
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
VGS = 0 V, f = 1 MHz
VDS = 25 V
259
QG(TOT)
VGS = 4.5 V, VDS = 32 V, ID = 20 A
21
QG(TOT)
VGS = 10 V, VDS = 32 V, ID = 20 A
41
Coss
Crss
183
nC
nC
Threshold Gate Charge
QG(TH)
1.7
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
3.5
V
td(on)
12.4
ns
VGS = 10 V, VDS = 32 V, ID = 20 A
6.9
11.3
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
tr
td(off)
Fall Time
VGS = 10 V, VDS = 32 V
ID = 20 A, RG = 2.5 W
tf
30.2
36
54
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.88
TJ = 125°C
0.76
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V
IS = 20 A
22.8
VGS = 0 V, dIs/dt = 100 A/ms
IS = 20A
QRR
1.0
V
ns
11.2
11.6
13.7
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
NVDD5894NL
120
10 to 5.2 V
110
100
VGS = 4.8 V
70
60
50
4.0 V
3.6 V
40
30
20
10
0
ID, DRAIN CURRENT (A)
4.4 V
90
80
3.2 V
0
1
2
3
4
5
90
80
70
60
50
30
20
1
TJ = −55°C
2
3
4
5
6
Figure 2. Transfer Characteristics
0.032
0.028
0.024
0.020
0.016
0.012
4.5
5.5
6.5
7.5
8.5
9.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.030
TJ = 25°C
0.025
0.020
VGS = 4.5 V
0.015
0.010
0.005
VGS = 10 V
0
10
20
30
40
50
60
70
80
90 100 110
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.00
100,000
VGS = 10 V
ID = 50 A
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
TJ = 150°C
Figure 1. On−Region Characteristics
0.036
1.75
TJ = 25°C
40
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 50 A
TJ = 25°C
3.5
VDS = 5 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.040
0.008
120
110
100
10
0
2.8 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1.50
10,000
1.25
1.00
TJ = 150°C
TJ = 125°C
1000
0.75
0.50
−50 −25
0
25
50
75
100
125
150
175
100
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NVDD5894NL
C, CAPACITANCE (pF)
2500
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
CISS
2000
1500
VGS = 0 V
TJ = 25°C
f = 1 MHz
1000
COSS
500
0
CRSS
0
10
20
30
40
QT
9
8
7
6
5
QGS
QGD
4
3
VDS = 32 V
TJ = 25°C
ID = 20 A
2
1
0
0
5
10
15
20
25
30
35
40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
45
20
1000
VGS = 10 V
VDD = 32 V
ID = 20 A
18
td(off)
tf
100
IS, SOURCE CURRENT (A)
t, TIME (ns)
10
tr
td(on)
10
VGS = 0 V
TJ = 25°C
16
14
12
10
8
6
4
2
1
1
10
0
100
0
0.1
0.2
0.3
0.7
0.8
0.9
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
IPEAK, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
0.01 ms
0.1 ms
VGS = 10 V
TC = 25°C
650 mm2
2 oz Cu pad
0.1
0.01
0.5
RG, GATE RESISTANCE (W)
100
1
0.4
1 ms
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
dc
10
TJ (initial) = 25°C
TJ (initial) = 125°C
10
1
100
1E−06
1E−05
1E−04
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TAV, TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Avalanche Characteristics
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4
1E−03
NVDD5894NL
TYPICAL CHARACTERISTICS
10
R(t) (°C/W)
RqJC = 2°C/W Steady State
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 13. Thermal Response
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5
0.1
1
10
NVDD5894NL
PACKAGE DIMENSIONS
DPAK−5, CENTER LEAD CROP
CASE 175AA
ISSUE A
−T−
SEATING
PLANE
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
R1
Z
A
S
DIM
A
B
C
D
E
F
G
H
J
K
L
R
R1
S
U
V
Z
1 2 3 4 5
U
K
F
J
L
H
D
G
5 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.020 0.028
0.018 0.023
0.024 0.032
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.045 BSC
0.170 0.190
0.185 0.210
0.025 0.040
0.020
−−−
0.035 0.050
0.155 0.170
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.51
0.71
0.46
0.58
0.61
0.81
4.56 BSC
0.87
1.01
0.46
0.58
2.60
2.89
1.14 BSC
4.32
4.83
4.70
5.33
0.63
1.01
0.51
−−−
0.89
1.27
3.93
4.32
T
SOLDERING FOOTPRINT
6.4
0.252
2.2
0.086
0.34 5.36
0.013 0.217
5.8
0.228
10.6
0.417
0.8
0.031
SCALE 4:1
mm Ǔ
ǒinches
5−LEAD DPAK CENTRAL LEAD CROP
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NVDD5894NL/D