MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS Features • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 217 mg (Approximately), SMC 95 mg (Approximately), SMB • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead Device Meets MSL 1 Requirements ESD Ratings: ♦ Machine Model, C ♦ Human Body Model, 3B SMC CASE 403 SMB CASE 403A MARKING DIAGRAMS AYWW B36G G AYWW B36G G B36 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRS360T3G SMC (Pb−Free) 2,500 / Tape & Reel NRVBS360T3G SMC (Pb−Free) 2,500 / Tape & Reel MBRS360BT3G SMB (Pb−Free) 2,500 / Tape & Reel NRVBS360BT3G SMB (Pb−Free) 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 February, 2014 − Rev. 9 1 Publication Order Number: MBRS360T3/D MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 60 V Average Rectified Forward Current IF(AV) 3.0 @ TL = 137°C 4.0 @ TL = 127°C A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Storage Temperature Range Tstg − 65 to +175 °C Operating Junction Temperature (Note 1) TJ − 65 to +175 °C A 125 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Lead (Note 2) SMC Package SMB Package RqJL Thermal Resistance, Junction−to−Ambient (Note 2) SMC Package SMB Package RqJA Thermal Resistance, Junction−to−Ambient (Note 3) SMC Package SMB Package (Note 4) RqJA Value Unit °C/W 11 15 °C/W 136 145 °C/W 71 73 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 5) (iF = 3.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 5) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR V 0.63 mA 0.03 3.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with minimum recommended pad size, PC Board FR4. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 4. Typical Value; 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 5. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 TJ = 150°C TJ = 175°C 1 TJ = 100°C TJ = 25°C 0.1 0.01 TJ = 175°C 1 0.1 TJ = −40°C 0.0 0.2 0.4 0.6 0.01 0.8 TJ = 150°C TJ = 25°C TJ = 100°C TJ = −40°C 0.0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G IR, INSTANTANEOUS REVERSE CURRENT (A) 1.0E+00 1.0E−01 TJ = 175°C 1.0E−02 TJ = 150°C 1.0E−03 TJ = 100°C 1.0E−04 1.0E−05 TJ = 25°C 1.0E−06 1.0E−07 0 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 60 Figure 3. Typical Reverse Current IR, INSTANTANEOUS REVERSE CURRENT (A) 1.0E+00 1.0E−01 TJ = 175°C TJ = 150°C 1.0E−02 TJ = 100°C 1.0E−03 1.0E−04 TJ = 25°C 1.0E−05 1.0E−06 0 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current http://onsemi.com 3 60 PFO, AVERAGE POWER DISSIPATION (W) 5 dc 4 SQUARE WAVE 3 2 1 0 RqJL = 15°C/W 0 20 40 60 80 100 120 140 TL, LEAD TEMPERATURE (°C) 160 180 4 TJ = 175°C 3.5 SQUARE WAVE 3 dc 2.5 2 1.5 1 0.5 0 0 0.5 1.5 1 2 TJ = 25°C 100 0 3 3.5 4 4.5 Figure 6. Forward Power Dissipation 1000 10 2.5 IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating C, CAPACITANCE (pF) IF(AV), AVERAGE FORWARD CURRENT (A) MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance http://onsemi.com 4 60 70 5 r(t), TRANSIENT THERMAL RESPONSE MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G 100 D = 0.5 0.2 10 0.1 P(pk) 0.05 1 0.01 0.1 0.00001 Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.0001 0.001 0.1 0.01 10 1 100 1000 t, TIME (s) Figure 8. Thermal Response, Junction−to−Ambient, SMC Package 100 50% Duty Cycle R(t) (°C/W) 10 20% 10% 5% 2% P(pk) 1 1% Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 0.1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (s) 1 10 Figure 9. Typical Thermal Response, Junction−to−Ambient, SMB Package http://onsemi.com 5 100 1000 MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.20 2.28 0.10 0.19 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.087 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.090 0.007 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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