ONSEMI MBRS360BT3G

MBRS360T3G,
MBRS360BT3G,
NRVBS360T3G,
NRVBS360BT3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 60 VOLTS
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
NRVBS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 217 mg (Approximately), SMC
95 mg (Approximately), SMB
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
Device Meets MSL 1 Requirements
ESD Ratings:
♦ Machine Model, C
♦ Human Body Model, 3B
SMC
CASE 403
SMB
CASE 403A
MARKING DIAGRAMS
AYWW
B36G
G
AYWW
B36G
G
B36
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBRS360T3G
SMC
(Pb−Free)
2,500 /
Tape & Reel
NRVBS360T3G
SMC
(Pb−Free)
2,500 /
Tape & Reel
MBRS360BT3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
NRVBS360BT3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 8
1
Publication Order Number:
MBRS360T3/D
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
IF(AV)
3.0 @ TL = 137°C
4.0 @ TL = 127°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
Storage Temperature Range
Tstg
− 65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
− 65 to +175
°C
A
125
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Lead (Note 2)
SMC Package
SMB Package
RqJL
Thermal Resistance, Junction−to−Ambient (Note 2)
SMC Package
SMB Package
RqJA
Thermal Resistance, Junction−to−Ambient (Note 3)
SMC Package
SMB Package (Note 4)
RqJA
Value
Unit
°C/W
11
15
°C/W
136
145
°C/W
71
73
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 5)
(iF = 3.0 A, TJ = 25°C)
VF
Maximum Instantaneous Reverse Current (Note 5)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR
2.
3.
4.
5.
V
0.740
mA
0.15
10
Mounted with minimum recommended pad size, PC Board FR4.
1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Typical Value; 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
10
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10
TJ = 150°C
TJ = 175°C
1
TJ = 100°C
TJ = 25°C
0.1
0.01
TJ = 175°C
1
0.1
TJ = −40°C
0.0
0.2
0.4
0.6
0.01
0.8
TJ = 150°C
TJ = 25°C
TJ = 100°C
TJ = −40°C
0.0
0.2
0.4
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G
IR, INSTANTANEOUS REVERSE
CURRENT (A)
1.0E+00
1.0E−01
TJ = 175°C
1.0E−02
TJ = 150°C
1.0E−03
TJ = 100°C
1.0E−04
1.0E−05
TJ = 25°C
1.0E−06
1.0E−07
0
10
20
30
40
50
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
60
Figure 3. Typical Reverse Current
IR, INSTANTANEOUS REVERSE
CURRENT (A)
1.0E+00
1.0E−01
TJ = 175°C
TJ = 150°C
1.0E−02
TJ = 100°C
1.0E−03
1.0E−04
TJ = 25°C
1.0E−05
1.0E−06
0
10
20
30
40
50
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
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3
60
PFO, AVERAGE POWER DISSIPATION (W)
5
dc
4
SQUARE WAVE
3
2
1
0
RqJL = 15°C/W
0
20
40
60
80
100 120 140
TL, LEAD TEMPERATURE (°C)
160
180
4
TJ = 175°C
3.5
SQUARE
WAVE
3
dc
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
2
TJ = 25°C
100
0
10
3
3.5
4
4.5
Figure 6. Forward Power Dissipation
1000
10
2.5
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
C, CAPACITANCE (pF)
IF(AV), AVERAGE FORWARD CURRENT (A)
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G
20
30
40
50
VR, REVERSE VOLTAGE (V)
Figure 7. Typical Capacitance
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4
60
70
5
r(t), TRANSIENT THERMAL RESPONSE
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G
100
D = 0.5
0.2
10
0.1
P(pk)
0.05
1
0.01
0.1
0.00001
Test Type > min pad 1 oz
RqJC = min pad 1 oz C/W
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient, SMC Package
100
50% Duty Cycle
R(t) (°C/W)
10
20%
10%
5%
2%
P(pk)
1
1%
Test Type > min pad 1 oz
RqJC = min pad 1 oz C/W
t1
0.1
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
1
10
Figure 9. Typical Thermal Response, Junction−to−Ambient, SMB Package
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5
100
1000
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G
PACKAGE DIMENSIONS
SMC
PLASTIC PACKAGE
CASE 403−03
ISSUE E
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
MIN
1.90
0.05
2.92
0.15
5.59
6.60
7.75
0.76
MILLIMETERS
NOM
MAX
2.13
2.41
0.10
0.15
3.00
3.07
0.23
0.30
5.84
6.10
6.86
7.11
7.94
8.13
1.02
1.27
0.51 REF
A
L
L1
c
A1
SOLDERING FOOTPRINT*
4.343
0.171
3.810
0.150
2.794
0.110
SCALE 4:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MIN
0.075
0.002
0.115
0.006
0.220
0.260
0.305
0.030
INCHES
NOM
0.084
0.004
0.118
0.009
0.230
0.270
0.313
0.040
0.020 REF
MAX
0.095
0.006
0.121
0.012
0.240
0.280
0.320
0.050
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE H
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.20
2.28
0.10
0.19
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.087
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.090
0.007
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MBRS360T3/D