SiE800DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Source Case Drain Top RT1 958.6109 m 2.6158 m 185.6655 µ RT2 7.7501 381.2663 m 71.7125 m RT3 11.4717 1.7221 950.3954 m RT4 47.6099 1.3104 177.2356 m Thermal Capacitance (Joules/°C) Junction to Ambient Case Source Case Drain Top CT1 386.8027 µ 67.2036 µ 559.6050 µ CT2 356.7597 m 1.0300 m 5.1184 m CT3 33.6036 m 34.7285 m 19.4889 m CT4 1.3814 29.3605 m 4.5448 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73658 Revision 01-Dec-05 www.vishay.com 1 SiE800DF_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Case Drain Top Junction to Ambient Case Source RF1 7.4187 2.6490 m 2.3337 m RF2 7.0989 399.1700 m 302.9896 m RF3 7.2919 1.8800 555.8412 m RF4 46.0266 1.1338 337.9321 m Thermal Capacitance (Joules/°C) Junction to Ambient Case Source Case Drain Top CF1 13.3779 m 110.1303 µ 616.1092 µ CF2 77.0586 m 753.0523 µ 1.6215 m CF3 9.7954 m 14.8148 m 1.6159 m CF4 1.3066 5.6227 m 5.5801 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 73658 Revision 01-Dec-05 SiE800DF_RC Vishay Siliconix 4.0 (A) j-f.opt.dat, SiE800DF_j-c_S_M_txt.dat 3.0 2.0 1.0 0 100us Time V(CT1:1) 1.0ms “j-c_S” 10ms 100ms 1.0s Time (A)j-f.opt, SiE800DF_j-c_S_M_txt 4.0 3.0 2.0 1.0 0 100us V(CF1:1) “j-c_S” 1.0ms Document Number: 73658 Revision 01-Dec-05 10ms Time 100ms 1.0s Time www.vishay.com 3