Si7530DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Foot Case Nch RT1 2.7032 2.7032 N/A 2.1126 Case Pch 1.8456 RT2 56.3711 56.3711 N/A 289.1000 m 228.6000 m RT3 10.0561 10.0561 N/A 1.1557 1.0046 RT4 15.8696 15.8696 N/A 1.6426 1.2212 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Foot Case Nch Case Pch CT1 1.6400 m 1.6400 m N/A 774.3999 u 740.1442 u CT2 1.2524 1.2524 N/A 1.7140 m 19.4319 m CT3 16.8152 m 16.8152 m N/A 177.1961 m 198.9611 m CT4 185.9933 m 185.9933 m N/A 7.2563 m 9.0791 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 69241 Revision: 26-Jul-07 www.vishay.com 1 Si7530DP_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Foot Case Nch RF1 3.6621 3.6621 N/A 2.3331 Case Pch 2.1656 RF2 11.7854 11.7854 N/A 1.7307 1.2361 RF3 19.2138 19.2138 N/A 1.0257 872.9618 m RF4 50.3387 50.3387 N/A 110.5000 m 25.3382 m Foot Case Nch Case Pch 646.4018 u Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch CF1 1.7443 m 1.7443 m N/A 498.1549 u CF2 15.6266 m 15.6266 m N/A 3.6677 m 7.2903 m CF3 174.0794 m 174.0794 m N/A 156.6513 m 191.3531 m CF4 1.2073 1.2073 N/A 980.1945 m 1.9190 Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 69241 Revision: 26-Jul-07 Si7530DP_RC Vishay Siliconix Document Number: 69241 Revision: 26-Jul-07 www.vishay.com 3 Si7530DP_RC Vishay Siliconix www.vishay.com 4 Document Number: 69241 Revision: 26-Jul-07