SiE802DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Case Drain Top Junction to Ambient Case Source RT1 800.8191 m 1.8836 m 13.9369 m RT2 7.3171 225.2602 m 563.7347 m RT3 10.5922 1.3129 258.5365 m RT4 49.1350 1.1755 167.1992 m Thermal Capacitance (Joules/°C) Junction to Ambient Case Source Case Drain Top CT1 10.0497 m 49.6434 µ 347.5463 µ CT2 588.1963 m 1.6560 m 30.1854 m CT3 47.1217 m 48.9720 m 65.7388 m CT4 1.4789 54.9761 m 3.0297 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73659 Revision 29-Nov-05 www.vishay.com 1 SiE802DF_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Case Drain Top Junction to Ambient Case Source RF1 8.6804 2.7253 m 3.2505 m RF2 5.8765 244.8002 m 262.0894 m RF3 5.9897 1.7199 498.7416 m RF4 47.2176 757.7684 m 240.9187 m Thermal Capacitance (Joules/°C) Junction to Ambient Case Source Case Drain Top CF1 25.1275 m 441.7276 µ 236.4508 µ CF2 145.2098 m 1.4085 m 2.5538 m CF3 17.5646 m 22.4924 m 20.2395 m CF4 1.2744 24.3718 m 8.9116 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 73659 Revision 29-Nov-05 SiE802DF_RC Vishay Siliconix (A)j-f.opt, SiE802DF_j-c_S_M_txt 3.0 2.5 2.0 1.5 1.0 0.5 0 100us V(CT1:1) 1.0ms “j-c_S_M” 10ms 100ms 1.0s Time (A)j-f.opt, SiE802DF_j-cDT_M_txt 1.2 1.0 0.8 0.6 0.4 0.2 0 100us V(CT1:1) 1.0ms “j-c_DT” 10ms Time 100ms 1.0s (B)j-f.opt, SiE802DF_j-c_S_M_txt 3.0 2.5 1.0 2.0 0.8 1.5 0.6 1.0 0.4 0.5 0.2 0 100us V(CF1:1) (A)j-f.opt, SiE802DF_j-cDT_M_txt 1.2 1.0ms “j-c_S_M” Document Number: 73659 Revision 29-Nov-05 10ms Time 100ms 1.0s 0 100us V(CF1:1) 1.0ms “j-c_DT” 10ms Time 100ms 1.0s www.vishay.com 3