SiE802DF-RC

SiE802DF_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Case Drain Top
Junction to
Ambient
Case Source
RT1
800.8191 m
1.8836 m
13.9369 m
RT2
7.3171
225.2602 m
563.7347 m
RT3
10.5922
1.3129
258.5365 m
RT4
49.1350
1.1755
167.1992 m
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case Source
Case Drain Top
CT1
10.0497 m
49.6434 µ
347.5463 µ
CT2
588.1963 m
1.6560 m
30.1854 m
CT3
47.1217 m
48.9720 m
65.7388 m
CT4
1.4789
54.9761 m
3.0297 m
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73659
Revision 29-Nov-05
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SiE802DF_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Case Drain Top
Junction to
Ambient
Case Source
RF1
8.6804
2.7253 m
3.2505 m
RF2
5.8765
244.8002 m
262.0894 m
RF3
5.9897
1.7199
498.7416 m
RF4
47.2176
757.7684 m
240.9187 m
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case Source
Case Drain Top
CF1
25.1275 m
441.7276 µ
236.4508 µ
CF2
145.2098 m
1.4085 m
2.5538 m
CF3
17.5646 m
22.4924 m
20.2395 m
CF4
1.2744
24.3718 m
8.9116 m
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 73659
Revision 29-Nov-05
SiE802DF_RC
Vishay Siliconix
(A)j-f.opt, SiE802DF_j-c_S_M_txt
3.0
2.5
2.0
1.5
1.0
0.5
0
100us
V(CT1:1)
1.0ms
“j-c_S_M”
10ms
100ms
1.0s
Time
(A)j-f.opt, SiE802DF_j-cDT_M_txt
1.2
1.0
0.8
0.6
0.4
0.2
0
100us
V(CT1:1)
1.0ms
“j-c_DT”
10ms
Time
100ms
1.0s
(B)j-f.opt, SiE802DF_j-c_S_M_txt
3.0
2.5
1.0
2.0
0.8
1.5
0.6
1.0
0.4
0.5
0.2
0
100us
V(CF1:1)
(A)j-f.opt, SiE802DF_j-cDT_M_txt
1.2
1.0ms
“j-c_S_M”
Document Number: 73659
Revision 29-Nov-05
10ms
Time
100ms
1.0s
0
100us
V(CF1:1)
1.0ms
“j-c_DT”
10ms
Time
100ms
1.0s
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