NCV4949A 100 mA, 5.0 V, Low Dropout Voltage Regulator with Reset and Sense The NCV4949A is a monolithic integrated 5.0 V voltage regulator with a very low dropout and additional functions such as reset and an uncommitted voltage sense comparator. It is designed for supplying microcontroller/microprocessor controlled systems particularly in automotive applications. The NCV4949A has improved reset behavior for lower input and output voltage levels. http://onsemi.com MARKING DIAGRAMS 8 • • • • • • • • • • • SOIC−8 D SUFFIX CASE 751 8 Features 1 Operating DC Supply Voltage Range 5.0 V to 28 V Transient Supply Voltage Up to 40 V High Precision Output Voltage 5.0 V ±1% Output Current Capability Up to 100 mA Very Low Dropout Voltage Less Than 0.4 V Reset Circuit Sensing The Output Voltage Programmable Reset Pulse Delay Voltage Sense Comparator Thermal Shutdown and Short Circuit Protections AEC−Q100 Grade 1 Qualified and PPAP Capable These are Pb−Free Devices V4949A ALYWD G 1 8 SOIC−8 EP PD SUFFIX CASE 751AC 8 1 V4949A ALYWG G 1 20 SOIC−20 W DW SUFFIX CASE 751AC NCV4949A AWLYYWWG 1 Output Voltage (Vout) VZ 3 8 Supply Voltage (VCC) A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G or G = Pb−Free Device (Note: Microdot may be in either location) CT 4 Preregulator 6.0 V 1 2.0 mA Reset 6 + - Regulator Sense Input (Si) 2.0 V Sense Output (So) Reset Vs 7 2 + 1.23 Vref PIN CONNECTIONS 1.23 V VCC 1 8 Vout Si 2 7 So VZ 3 6 Reset CT 4 5 GND Sense (Top View) 5 GND ORDERING INFORMATION Figure 1. Representative Block Diagram © Semiconductor Components Industries, LLC, 2014 October, 2014 − Rev. 2 See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. 1 Publication Order Number: NCV4949A/D NCV4949A ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VCC 28 V VCC TR 40 V Output Current Iout Internally Limited − Output Voltage (Note 1) Vout 20 V Sense Input Current ISI ±1.0 mA Sense Input Voltage (Note 1) VSI VCC DC Operating Supply Voltage (Note 1) Transient Supply Voltage (t < 1.0 s) − Output Voltages (Note 1) V Reset Output VReset 20 Sense Output VSO 20 Output Currents mA Reset Output IReset 5.0 Sense Output ISO 5.0 Preregulator Output Voltage (Note 1) VZ 7.0 V Preregulator Output Current IZ 5.0 mA Reset Delay Voltage (Note 1) CT 7.0 V Reset Delay Current CT Internally Limited − ESD Protection at any pin V Human Body Model − 4000 Machine Model − 200 Charged Device Model (SOIC−20 W) − 1000 Thermal Resistance, Junction−to−Air °C/W RqJA SOIC−8 SOIC−8 EP SOIC−20 W 189.3 84.8 95.8 Operating Junction Temperature Range TJ −40 to +150 °C Storage Temperature Range Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Absolute negative voltage on these pins not to go below −0.3 V. LEAD TEMPERATURE SOLDERING REFLOW (Note 2) Rating Symbol Min Max Unit Reflow (SMD styles only) lead free 60 − 150 sec above 217, 40 sec max at peak Tsld − 260 °C Moisture Sensitivity Level (SOIC−8) MSL Level 1 Moisture Sensitivity Level (SOIC−8EP) MSL Level 2 Moisture Sensitivity Level (SOIC−20W) MSL Level 3 2. Per IPC / JEDEC J−STD−020C http://onsemi.com 2 NCV4949A ELECTRICAL CHARACTERISTICS (VCC = 14 V, −40°C < TA < 125°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Output Voltage (TA = 25°C, Iout = 1.0 mA) Vout 4.95 5.0 5.05 V Output Voltage (6.0 V < VCC < 28 V, 1.0 mA < Iout < 50 mA) Vout 4.9 5.0 5.1 V Output Voltage (VCC = 35 V, t < 1.0 s, 1.0 mA < Iout < 50 mA) Vout 4.9 5.0 5.1 V Dropout Voltage Vdrop V Iout = 10 mA − 0.1 0.25 Iout = 50 mA − 0.2 0.40 Iout = 100 mA − 0.3 0.50 VIO − 0.2 0.4 V Line Regulation (6.0 V < VCC < 28 V, Iout = 1.0 mA) Regline − 1.0 20 mV Load Regulation (1.0 mA < Iout < 100 mA) Regload − 8.0 30 mV 105 200 400 − 100 − IQSE − 150 260 mA IQ − − 5.0 mA VResth − 4.5 − Input to Output Voltage Difference in Undervoltage Condition (VCC = 4.0 V, Iout = 35 mA) Current Limit ILim Vout = 4.5 V Vout = 0 V Quiescent Current (Iout = 0.3 mA, TA < 100°C) Quiescent Current (Iout = 100 mA) mA RESET Reset Threshold Voltage Reset Threshold Hysteresis VResth,hys V mV @ TA = 25°C 50 100 200 @ TA = −40 to +125°C 50 − 300 Reset Pulse Delay (CT = 100 nF, tR ≥ 100 ms) tResD 55 100 180 ms Reset Reaction Time (CT = 100 nF) tResR − 5.0 30 ms Reset Output Low Voltage (RReset = 10 kW to Vout, VCC ≥ 3.0 V) VResL − − 0.4 V Reset Output High Leakage Current (VReset = 5.0 V) IResH − − 1.0 mA Delay Comparator Threshold VCTth − 2.0 − V VCTth, hys − 100 − mV VSOth 1.16 1.23 1.35 V Delay Comparator Threshold Hysteresis SENSE Sense Low Threshold (VSI Decreasing = 1.5 V to 1.0 V) Sense Threshold Hysteresis VSOth,hys 20 100 200 mV Sense Output Low Voltage (VSI ≤ 1.16 V, VCC ≥ 3.0 V, RSO = 10 kW to Vout) VSOL − − 0.4 V Sense Output Leakage (VSO = 5.0 V, VSI ≥ 1.5 V) ISOH − − 1.0 mA ISI −1.0 0.1 1.0 mA VZ − 6.3 − V Sense Input Current PREREGULATOR Preregulator Output Voltage (IZ = 10 mA) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 3 NCV4949A PIN FUNCTION DESCRIPTION Pin SO−8, SO−8 EP Pin SO−20 W Symbol Description 1 19 VCC 2 20 SI Input of Sense Comparator. If not used, connect to Vout. 3 1 VZ Output of Preregulator 4 2 CT Reset Delay Capacitor 5 4−7, 14−17 GND Ground 6 10 Reset Output of Reset Comparator 7 11 SO Output of Sense Comparator 8 12 Vout Main Regulator Output − 3, 8, 9, 13, 18 NC No Connect Supply Voltage http://onsemi.com 4 NCV4949A TYPICAL CHARACTERIZATION CURVES 60.0 0.5 Unstable Region Vin = 13.5 V Cout = 10 mF Stable Region Vin = 13.5 V Cout = 10 mF 0.4 40.0 ESR (W) ESR (W) 50.0 30.0 0.3 0.2 20.0 0.1 10.0 Stable Region 0 0 10 20 30 40 50 60 70 80 Unstable Region 90 0 100 0 10 20 30 OUTPUT CURRENT (mA) 60 70 80 90 100 6 VCC = 14 V Iout = 1.0 mA TJ = 25°C Vout , OUTPUT VOLTAGE (V) Vout , OUTPUT VOLTAGE (V) 5.03 50 Figure 3. ESR Stability Border Vs. Output Current (Very Low ESR) Figure 2. ESR Stability Border Vs. Output Current (Full ESR Range) 5.04 40 OUTPUT CURRENT (mA) 5.02 5.01 5 4.99 4.98 5 4 3 RL = 5 kW 2 RL = 100 W 1 4.97 4.96 -40 -20 0 20 40 60 80 100 0 120 0 1 2 3 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Output Voltage versus Junction Temperature 6 7 8 9 10 0.40 TJ = 25°C Vdrop , DROPOUT VOLTAGE (mV) Vdrop , DROPOUT VOLTAGE (mV) 5 Figure 5. Output Voltage versus Supply Voltage 250 200 150 100 50 0 4 VCC, SUPPLY VOLTAGE (V) 0.1 1.0 10 Iout = 50 mA 0.20 Iout = 10 mA 0.10 0 -40 100 Iout = 100 mA 0.30 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) Iout, OUTPUT CURRENT (mA) Figure 6. Dropout Voltage versus Output Current Figure 7. Dropout Voltage versus Junction Temperature http://onsemi.com 5 120 NCV4949A TYPICAL CHARACTERIZATION CURVES (continued) 3.0 VCC = 14 V TJ = 25°C 2.5 IQ, QUIESCENT CURRENT (mA) IQ, QUIESCENT CURRENT (mA) 3.0 2.0 1.5 1.0 0.5 0 0.1 1.0 10 2.0 RL = 100 W 1.5 1.0 RL = 5.0 kW 0.5 0 100 TJ = 25°C 2.5 0 5.0 10 Iout, OUTPUT CURRENT (mA) VReset , RESET THRESHOLD VOLTAGE (V) 6.0 VReset , RESET OUTPUT (V) TJ = 25°C 5.0 Resistor 10 kW from Reset Output to 5.0 V 3.0 2.0 1.0 0 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 30 4.8 4.9 5.0 4.66 Upper Threshold 4.62 4.58 4.54 4.5 Lower Threshold 4.46 4.42 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 10. Reset Output versus Regulator Output Voltage Figure 11. Reset Thresholds versus Junction Temperature 1.4 5.0 TJ = 25°C 4.0 Resistor 10 k from Sense Output to 5.0 V VSI, SENSE INPUT VOLTAGE (V) 6.0 VSO , SENSE OUTPUT VOLTAGE (V) 25 4.7 Vout, OUTPUT VOLTAGE (V) 3.0 20 Figure 9. Quiescent Current versus Supply Voltage Figure 8. Quiescent Current versus Output Current 4.0 15 VCC, SUPPLY VOLTAGE (V) 2.0 1.0 1.38 1.36 1.34 Upper Threshold 1.32 1.3 1.28 1.26 Lower Threshold 1.24 1.22 0 1.0 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.2 -40 1.5 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) VSI, SENSE INPUT VOLTAGE (V) Figure 12. Sense Output versus Sense Input Voltage Figure 13. Sense Thresholds versus Junction Temperature http://onsemi.com 6 120 NCV4949A APPLICATION INFORMATION Supply Voltage Transient less than 8.0 V supply transients of more than 0.4 V/ms can cause a reset signal perturbation. To improve the transient behavior for supply voltages less than 8.0 V a capacitor at Pin 3 can be used. A capacitor at Pin 3 (C3 ≤ 1.0 mF) also reduces the output noise. High supply voltage transients can cause a reset output signal perturbation. For supply voltages greater than 8.0 V the circuit shows a high immunity of the reset output against supply transients of more than 100 V/ms. For supply voltages Vout C3 VZ (optional) Vbat VCC 3 CO CCT 8 CT 4 Preregulator 6.0 V 1 Cs 2.0 mA Reset 6 RSI1 + - RReset 10 kW Vout 2.0 V Regulator Reset VCC RSO 10 kW So Si 7 2 RSI2 CSI + 1.23 Vref Sense 5 GND NOTE: 1. For stability: Cs ≥ 1.0 mF, CO ≥ 4.7 mF, ESR < 10 W at 10 kHz 2. Recommended for application: Cs = 10 mF, CO = 10 mF to 74 mF @ TA = 125°C By using higher Cs it is possible to use higher CO. Figure 14. Application Schematic http://onsemi.com 7 1.23 V NCV4949A OPERATING DESCRIPTION The NCV4949A is a monolithic integrated low dropout voltage regulator. Several outstanding features and auxiliary functions are implemented to meet the requirements of supplying microprocessor systems in automotive applications. It is also suitable in other applications where the included functions are required. The modular approach of this device allows the use of other features and functions independently when required. Vout Vout 5.0 V Voltage Regulator The voltage regulator uses an isolated collector vertical PNP transistor as a regulating element. With this structure, very low dropout voltage at currents up to 100 mA is obtained. The dropout operation of the standby regulator is maintained down to 3.0 V input supply voltage. The output voltage is regulated up to a transient input supply voltage of 35 V. A typical curve showing the standby output voltage as a function of the input supply voltage is shown in Figure 16. The current consumption of the device (quiescent current) is less than 200 mA. To reduce the quiescent current peak in the undervoltage region and to improve the transient response in this region, the dropout voltage is controlled. The quiescent current as a function of the supply input voltage is shown in Figure 17. 0V 2.0 V 5.0 V 35 V VCC Figure 16. Output Voltage versus Supply Voltage IQ, QUIESCENT CURRENT (mA) 3.0 Short Circuit Protection: The maximum output current is internally limited. In case of short circuit, the output current is foldback current limited as described in Figure 15. TJ = 25°C 2.5 2.0 RL = 100 W 1.5 1.0 RL = 5.0 kW 0.5 0 0 5.0 10 15 20 25 30 VCC, SUPPLY VOLTAGE (V) 6.00 Figure 17. Quiescent Current versus Supply Voltage 5.00 Preregulator To improve transient immunity a preregulator stabilizes the internal supply voltage to 6.0 V. This internal voltage is present at Pin 3 (VZ). This voltage should not be used as an output because the output capability is very small (≤ 100 mA). This output may be used to improve transient behavior for supply voltages less than 8.0 V. In this case a capacitor (100 nF − 1.0 mF) must be connected between Pin 3 and GND. If this feature is not used Pin 3 must be left open. Vout (V) 4.00 3.00 2.00 1.00 0.00 0 50 100 150 200 Iout (mA) 250 300 350 Figure 15. Foldback Characteristic of Vout http://onsemi.com 8 NCV4949A Reset Circuit Output voltage drops below the reset threshold only marginally longer than the reaction time results in a shorter reset delay time. The nominal reset delay time will be generated for output voltage drops longer than approximately 50 ms. The typical reset output waveforms are shown in Figure 19. The block circuit diagram of the reset circuit is shown in Figure 18. The reset circuit supervises the output voltage. The reset threshold of 4.5 V is defined by the internal reference voltage and standby output divider. The reset pulse delay time tRD, is defined by the charge time of an external capacitor CT: t RD + Vout C x 2.0 V T 2.0 mA Vout1 5.0 V VRT + 0.1 V VRT The reaction time of the reset circuit originates from the discharge time limitation of the reset capacitor CT and is proportional to the value of CT. The reaction time of the reset circuit increases the noise immunity. 3.0 V t tR Reset tRD 1.23 V Vref 22 k 40 V Vin tRD tRR 2.0 mA Switch On Reset Input Drop Dump Output Overload Switch Off Figure 19. Typical Reset Output Waveforms CT Out + - Sense Comparator The sense comparator compares an input signal with an internal voltage reference of typical 1.23 V. The use of an external voltage divider makes this comparator very flexible in the application. It can be used to supervise the input voltage either before or after a protection diode and to provide additional information to the microprocessor such as low voltage warnings. 2.0 V Reg Figure 18. Reset Circuit ORDERING INFORMATION Package Shipping† SOIC−8 (Pb−Free) 2500 / Tape & Reel NCV4949APDR2G SOIC−8 EP (Pb−Free) 2500 / Tape & Reel NCV4949ADWR2G SOIC−20 WB (Pb−Free) 1000 / Tape & Reel Device NCV4949ADR2G †For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 NCV4949A PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 0.25 (0.010) M Y M 1 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 10 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 NCV4949A PACKAGE DIMENSIONS SOIC−8 EP CASE 751AC ISSUE B 2X NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS IN MILLIMETERS (ANGLES IN DEGREES). 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 MM TOTAL IN EXCESS OF THE “b” DIMENSION AT MAXIMUM MATERIAL CONDITION. 4. DATUMS A AND B TO BE DETERMINED AT DATUM PLANE H. 0.10 C A-B D 8 E1 2X 0.10 C D PIN ONE LOCATION DETAIL A D A 5 ÉÉÉ ÉÉÉ ÉÉÉ 1 F EXPOSED PAD 5 8 G E h 2X 4 4 0.20 C e 8X b 0.25 C A-B D B 1 BOTTOM VIEW A END VIEW TOP VIEW A 0.10 C A2 b1 GAUGE PLANE 0.10 C L SEATING PLANE C SIDE VIEW ÇÇ ÉÉ ÉÉ ÇÇ ÉÉ ÇÇ c H 8X A A1 0.25 (L1) DETAIL A q c1 (b) SECTION A−A SOLDERING FOOTPRINT* 2.72 0.107 1.52 0.060 7.0 0.275 Exposed Pad 4.0 0.155 2.03 0.08 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 DIM A A1 A2 b b1 c c1 D E E1 e L L1 F G h q MILLIMETERS MIN MAX 1.35 1.75 0.00 0.10 1.35 1.65 0.31 0.51 0.28 0.48 0.17 0.25 0.17 0.23 4.90 BSC 6.00 BSC 3.90 BSC 1.27 BSC 0.40 1.27 1.04 REF 2.24 3.20 1.55 2.51 0.25 0.50 0_ 8_ NCV4949A PACKAGE DIMENSIONS SOIC−20 WB CASE 751D−05 ISSUE G q A 20 X 45 _ h H M E 0.25 10X NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. 11 B M D 1 10 20X B B 0.25 M T A S B S L A 18X e A1 SEATING PLANE C T DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_ ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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