TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC1022 v00.0811 Features The HMC1022 is ideal for: High P1dB Output Power: 22 dBm • Test Instrumentation High Psat Output Power: 24 dBm • Microwave Radio & VSAT High Gain: 12 dB • Military & Space High Output IP3: 32 dBm • Telecom Infrastructure Supply Voltage: +10 V @ 150 mA • Fiber Optics 50 Ohm Matched Input/Output TE Typical Applications Die Size: 2.82 x 1.50 x 0.1 mm Functional Diagram General Description LE The HMC1022 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 48 GHz. The amplifier provides 12 dB of gain, 32 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 150 mA from a +10 V supply. The HMC1022 exhibits a slightly positive gain slope from 10 to 35 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC1022 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). B SO Amplifiers - Linear & Power - Chip GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz O Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +4.5 V, Idd = 150 mA [1] Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 16 9.5 11.5 Typ. Max. Min. 16 - 36 9.5 12 9.5 Typ. Max. Units 36 - 48 GHz 11.5 dB Gain Flatness ±0.5 ±0.3 ±1.1 dB Gain Variation Over Temperature 0.012 0.018 0.041 dB/ °C Input Return Loss 18 16 15 dB Output Return Loss 28 22 18 dB Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 20 22 24.5 19.5 19 dBm 23.5 21.5 16 21 dBm Output Third Order Intercept (IP3) 35 32 29 dBm Noise Figure 4 5.5 8 dB 150 150 150 mA Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) [1] Adjust Vgg1 between -2 to 0 V to achieve Idd = 150 mA typical. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz 18 10 16 S21 S11 S22 -10 12 10 TE -20 -30 8 -40 6 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 20 25 30 35 40 45 50 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25C +85C -55C -20 -30 0 B SO -10 -40 5 10 15 20 25 30 35 40 45 -10 -30 -40 50 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Low Frequency Gain & Return Loss O Gain vs. Vdd [1] +25C +85C -55C -20 FREQUENCY (GHz) 18 20 10 16 +8V +10V +11V 0 RESPONSE (dB) 14 GAIN (dB) 15 LE FREQUENCY (GHz) RETURN LOSS (dB) +25C +85C -55C 14 GAIN (dB) 0 Amplifiers - Linear & Power - Chip Gain vs. Temperature 20 RETURN LOSS (dB) RESPONSE (dB) Gain & Return Loss 12 10 S21 S11 S22 -10 -20 -30 -40 8 -50 6 0 5 10 15 20 25 30 35 40 45 50 -60 0.0001 FREQUENCY (GHz) 0.001 0.01 0.1 1 10 FREQUENCY (GHz) [1] For Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; for Vdd= 11V, Vgg2= +5.5V. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz P1dB vs. Supply Voltage [1] 24 24 22 22 P1dB (dBm) 26 20 20 +8V +10V +11V TE 18 +25C +85C -55C 16 16 14 14 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 Psat vs. Temperature 25 30 35 40 45 50 35 40 45 50 35 40 45 50 Psat vs. Supply Voltage [1] 28 28 26 26 22 B SO 24 20 16 0 5 10 15 20 25 30 35 40 45 24 22 +8V +10V +11V 20 +25C +85C -55C 18 18 16 50 0 5 10 15 FREQUENCY (GHz) 20 26 28 24 26 Psat (dBm) 22 20 18 30 24 22 100 mA 150 mA 20 16 100 mA 150 mA 14 25 FREQUENCY (GHz) Psat vs. Supply Current [2] O P1dB vs. Supply Current [2] P1dB (dBm) 20 FREQUENCY (GHz) LE FREQUENCY (GHz) Psat (dBm) P1dB (dBm) 26 18 Psat (dBm) Amplifiers - Linear & Power - Chip P1dB vs. Temperature 18 16 12 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) 0 5 10 15 20 25 30 FREQUENCY (GHz) [1] For Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; forVdd= 11V Vgg2= +5.5V. [2] Vdd= +10V, Vgg2=+3.5V. 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz 38 36 36 34 34 32 32 IP3 (dBm) 38 30 28 +8V +10V +11V 26 24 24 22 22 0 4 8 12 16 20 24 28 32 36 40 44 48 0 4 8 12 16 24 28 32 36 40 44 48 Output IM3 @ Vdd = +10V [1] Output IM3 @ Vdd = +8V [1] 60 60 50 50 40 30 20 B SO 40 4 GHz 10 GHz 16 GHz 22 GHz 10 0 0 2 4 6 20 28 GHz 34 GHz 40 GHz 44 GHz 8 10 12 14 16 18 30 4 GHz 10 GHz 16 GHz 22 GHz 10 0 2 4 6 8 12 50 10 NOISE FIGURE(dB) 60 40 30 20 4 GHz 10 GHz 16 GHz 22 GHz 10 10 12 14 16 18 20 Pout/TONE (dBm) Noise Figure vs. Temperature O Output IM3 @ Vdd = +11V [1] 28 GHz 34 GHz 40 GHz 44 GHz 0 20 Pout/TONE (dBm) IM3 (dBc) 20 FREQUENCY (GHz) LE FREQUENCY (GHz) IM3 (dBc) 28 TE +25C +85C -55C 26 30 Amplifiers - Linear & Power - Chip Output IP3 vs. Supply Voltage @ Pout = 14 dBm / Tone [1] IM3 (dBc) IP3 (dBm) Output IP3 vs. Temperature @ Pout = 14 dBm / Tone 28 GHz 34 GHz 40 GHz 44 GHz +25C +85C -55C 8 6 4 2 0 0 0 2 4 6 8 10 12 14 16 18 20 Pout/TONE (dBm) 0 4 8 12 16 20 24 28 32 36 40 44 48 FREQUENCY (GHz) [1] For Vdd= +8V, Vgg2=+3.5V; for Vdd= +10V, Vgg2= +4.5V; for Vdd= 11V Vgg2= +5.5V. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Power Compression @ 24 GHz Reverse Isolation vs. Temperature +25C +85C -55C -30 -40 28 Pout Gain PAE 24 20 16 12 TE -50 -60 -70 -80 8 4 0 0 5 10 15 20 25 30 35 40 45 50 -4 30 20 0 100 8 11 14 17 Gain & Power vs. Supply Voltage @ 24 GHz Gain P1dB Psat B SO 5 5 30 25 10 2 INPUT POWER (dBm) Gain & Power vs. Supply Current @ 24 GHz 15 -1 LE FREQUENCY (GHz) 110 120 130 140 Gain (dB), P1dB (dBm), Psat (dBm) ISOLATION (dB) Pout (dBm), GAIN (dB), PAE (%) 32 -20 Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - Chip 0 -10 25 20 Gain P1dB Psat 15 10 5 0 150 8 9 Idd (mA) 10 11 Vdd (V) 2 POWER DISSIPATION (W) O Power Dissipation 1.5 1 4 GHz 10 GHz 20 GHz 30 GHz 40 GHz 46 GHz 0.5 0 0 3 6 9 12 15 INPUT POWER (dBm) 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Second Harmonics vs. Temperature @ Pout = 10 dBm, Vdd = 10V & Vgg = 4.5V, 150 mA Second Harmonics vs. Vdd @ Pout = 10 dBm, Idd = 150 mA [1] 60 +25C +85C -55C 50 40 30 +8V +10V +11V 50 40 30 20 TE 20 60 10 10 0 0 0 4 8 12 16 20 24 0 FREQUENCY(GHz) 4 8 12 16 20 24 FREQUENCY(GHz) LE Second Harmonics vs. Pout Vdd = 10V & Vgg = 4.5V & Idd = 150 mA 60 50 40 B SO SECOND HARMONIC (dBc) 70 +4 dBm +6 dBm +8 dBm +10 dBm +12 dBm +14 dBm +16 dBm +18 dBm 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) Amplifiers - Linear & Power - Chip 70 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 70 Absolute Maximum Ratings O Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) 12V Output Power into VSWR >7:1 24 dBm -3 to 0 Vdc Storage Temperature -65 to 150 °C For Vdd = 12V, Vgg2 = 5.5V Idd >125mA Operating Temperature -55 to 85 °C For Vdd between 8.5V to 11V, Vgg2 = (Vdd - 6.5V) to 5.5V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For Vdd < 8.5V, Vgg2 must remain > 2V RF Input Power (RFIN) 20 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 27 mW/°C above 85 °C) 1.76 W Thermal Resistance (channel to die bottom) 37 °C/W Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +8 150 +10 150 +11 150 [1] For Vdd= +8V, Vgg=+3.5V; for Vdd= +10V, Vgg= +4.5V; for Vdd= 11V Vgg= +5.5V. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz TE LE B SO Amplifiers - Linear & Power - Chip Outline Drawing O Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 7 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Pad Descriptions Description Interface Schematic 1 RFIN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +4.5V should be applied to Vgg2. 4, 7 ACG2, ACG4 Low frequency termination. Attach bypass capacitor per application circuit herein. 3 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 5 RFOUT & VDD RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 6 ACG3 Low frequency termination. Attach bypass capacitor per application circuit herein. 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. GND Die bottom must be connected to RF/DC ground. LE B SO O Die Bottom Amplifiers - Linear & Power - Chip Function TE Pad Number For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz TE LE B SO Application Circuit O Amplifiers - Linear & Power - Chip Assembly Diagram NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1022 v00.0811 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Wire Bond 0.076mm (0.003”) TE 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. B SO Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Figure 1. LE Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Amplifiers - Linear & Power - Chip Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Mounting O The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10