HMC1024

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storage systems for secure long
term product support
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HMC1024
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HMC1024
v01.0712
Amplifiers - Linear & Power - Chip
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 27.5 - 33.5 GHz
Typical Applications
Features
The HMC1024 is ideal for:
Saturated Output Power: +31 dBm @ 29% PAE
• Point-to-Point Radios
High Output IP3: +40 dBm
• Point-to-Multi-Point Radios
High Gain: 24 dB
• VSAT & SATCOM
DC Supply: +5V @ 600 mA
• Military & Space
No External Matching Required
Die Size: 2.79 x 1.3 x 0.1 mm
Functional Diagram
General Description
The HMC1024 is a four stage GaAs pHEMT MMIC
1 Watt Power Amplifier which operates between 27.5
and 33.5 GHz. The HMC1024 provides 24 dB of gain,
+31 dBm of saturated output power, and 29% PAE
from a +5 V power supply. The HMC1024 exhibits
excellent linearity and is optimized for high capacity
point to point and point to multi-point radio systems.
The amplifier configuration and high gain make it an
excellent candidate for last stage signal amplification
before the antenna. All data is taken with the chip in a
50 Ohm test fixture connected via (2) 0.025 mm (1 mil)
diameter wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications, TA = +25° C, Vdd1, Vdd2, = +5V, Idd = 600 mA [1]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Units
27.5 - 30
20.5
Gain Variation Over Temperature
23.5
30 - 33.5
21.5
0.025
GHz
24.5
dB
0.025
dB/ °C
Input Return Loss
12
17
dB
Output Return Loss
12
18
dB
Output Power for 1 dB Compression (P1dB)
28.5
dBm
Saturated Output Power (Psat)
27
29
31
27
30.5
dBm
Output Third Order Intercept (IP3)[2]
40
40
dBm
Total Supply Current (Idd)
600
600
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 600 mA typical.
[2] Measurement taken at +5 V @ 600mA, Pout / Tone = +20 dBm
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1024
v01.0712
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 27.5 - 33.5 GHz
30
20
28
26
S21
S11
S22
10
0
-10
24
22
+25 C
+85 C
-55 C
20
-20
18
-30
16
25
27
29
31
33
35
27
28
29
FREQUENCY (GHz)
Input Return Loss vs. Temperature
32
33
34
0
+25 C
+85 C
-55 C
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
31
Output Return Loss vs. Temperature
0
-20
-30
-40
+25 C
+85 C
-55 C
-10
-20
-30
-40
27
28
29
30
31
32
33
34
27
28
29
FREQUENCY (GHz)
30
31
32
33
34
33
34
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB vs. Supply Voltage
34
34
+25C
+85C
-55C
5V
5.5V
6V
32
P1dB (dBm)
32
P1dB (dBm)
30
FREQUENCY (GHz)
Amplifiers - Linear & Power - Chip
Gain vs. Temperature
30
GAIN (dB)
RESPONSE (dB)
Broadband Gain &
Return Loss vs. Frequency
30
28
26
30
28
26
24
24
27
28
29
30
31
FREQUENCY (GHz)
32
33
34
27
28
29
30
31
32
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
HMC1024
v01.0712
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 27.5 - 33.5 GHz
34
32
32
Psat (dBm)
Psat (dBm)
Psat vs. Supply Voltage
34
30
28
+25 C
+85 C
-55 C
26
28
5V
5.5V
6V
24
27
28
29
30
31
32
33
34
27
28
29
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
31
32
33
34
Psat vs. Supply Current (Idd)
34
34
500 mA
600 mA
700 mA
32
Psat (dBm)
32
30
28
26
30
28
500 mA
600 mA
700 mA
26
24
24
27
28
29
30
31
32
33
34
28
29
30
FREQUENCY (GHz)
32
33
34
Output IP3 vs.
Supply Current, Pout/Tone = +20 dBm
45
45
40
40
35
+25 C
+85 C
-55 C
30
31
FREQUENCY (GHz)
IP3 (dBm)
IP3 (dBm)
30
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +20 dBm
35
500 mA
600 mA
700 mA
30
25
25
27
28
29
30
31
FREQUENCY (GHz)
3
30
26
24
P1dB (dBm)
Amplifiers - Linear & Power - Chip
Psat vs. Temperature
32
33
34
27
28
29
30
31
32
33
34
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1024
v01.0712
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 27.5 - 33.5 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +20 dBm
Output IM3 @ Vdd = +5V
45
60
50
IM3 (dBc)
IP3 (dBm)
40
5V
5.5V
6V
35
40
30
27 GHz
29 GHz
30 GHz
31 GHz
33 GHz
20
30
10
25
0
27
28
29
30
31
32
33
34
10
12
14
FREQUENCY (GHz)
70
60
60
50
50
40
27 GHz
29 GHz
30 GHz
31 GHz
33 GHz
20
20
22
24
20
22
24
40
30
27 GHz
29 GHz
30 GHz
31 GHz
33 GHz
20
10
10
0
0
10
12
14
16
18
20
22
10
24
12
14
16
18
Pout/TONE (dBm)
Pout/TONE (dBm)
Gain & Power vs.
Supply Current @ 30 GHz
Power Compression @ 30 GHz
40
35
Gain (dB), P1dB (dBm), Psat (dBm)
40
Pout (dBm), GAIN (dB), PAE (%)
18
Output IM3 @ Vdd = +6V
70
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd = +5.5V
30
16
Pout/TONE (dBm)
Amplifiers - Linear & Power - Chip
70
Pout
Gain
PAE
30
25
20
15
10
5
GAIN (dB)
P1dB (dBm)
Psat (dBm)
35
30
25
20
15
0
-9
-6
-3
0
3
INPUT POWER (dBm)
6
9
12
500
550
600
650
700
Idd (mA)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
HMC1024
v01.0712
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 27.5 - 33.5 GHz
Gain & Power vs.
Supply Voltage @ 30 GHz
Reverse Isolation vs. Temperature
0
-10
GAIN (dB)
P1dB (dBm)
Psat (dBm)
35
+25C
+85C
-55C
-20
ISOLATION (dB)
Gain (dB), P1dB (dBm), Psat (dBm)
30
25
-30
-40
-50
-60
20
-70
15
-80
5
5.2
5.5
5.7
6
27
28
Vdd (V)
29
30
31
32
33
34
FREQUENCY (GHz)
Power Dissipation
5
POWER DISSIPATION (W)
Amplifiers - Linear & Power - Chip
40
4
3
2
27 GHz
29 GHz
30 GHz
31 GHz
33 GHz
1
0
-9
-5
-1
3
7
11
INPUT POWER (dBm)
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+7V
Vdd (V)
Idd (mA)
RF Input Power (RFIN)
+18 dBm
+5.0
600
Channel Temperature
150 °C
+5.5
600
+6.0
600
Continuous Pdiss (T= 85 °C)
(derate 66.6 mW/°C above 85 °C)
4.34 W
Thermal Resistance
(channel to die bottom)
15.0 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Note: Amplifier will operate over full voltage ranges shown
above, Vgg adjusted to achieve Idd = 600 mA at +5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1024
v01.0712
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 27.5 - 33.5 GHz
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
Die Packaging Information
Amplifiers - Linear & Power - Chip
Outline Drawing
[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
6
HMC1024
v01.0712
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 27.5 - 33.5 GHz
Amplifiers - Linear & Power - Chip
Pad Descriptions
7
Pad Number
Function
Description
1
RFIN
This pad is DC coupled and matched to 50 Ohms.
2,
Vgg
Gate control for amplifier. Adjust Vgg to achieve recommended bias current. External bypass capacitors 100 pF,
10 nF, and 4.7 uF are required.
3
RFOUT
This pad is AC coupled and matched to 50 Ohms.
4, 5
Vdd2, Vdd1
Drain bias voltage. External bypass capacitors of 100 pF
are required for each pad., followed by common 10 nF and
4.7 uF capacitors.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1024
v01.0712
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 27.5 - 33.5 GHz
Amplifiers - Linear & Power - Chip
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8
HMC1024
v01.0712
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 27.5 - 33.5 GHz
Amplifiers - Linear & Power - Chip
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1024
v01.0712
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 27.5 - 33.5 GHz
Amplifiers - Linear & Power - Chip
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
10