NTJD4105C D

NTJD4105C
Small Signal MOSFET
20 V / −8.0 V, Complementary,
+0.63 A / −0.775 A, SC−88
Features
•
•
•
•
•
Complementary N and P Channel Device
Leading −8.0 V Trench for Low RDS(on) Performance
ESD Protected Gate − ESD Rating: Class 1
SC−88 Package for Small Footprint (2 x 2 mm)
Pb−Free Packages are Available
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V(BR)DSS
RDS(on) TYP
0.29 W @ 4.5 V
N−Ch 20 V
0.63 A
0.36 W @ 2.5 V
Applications
•
•
•
•
ID Max
DC−DC Conversion
Load/Power Switching
Single or Dual Cell Li−Ion Battery Supplied Devices
Cell Phones, MP3s, Digital Cameras, PDAs
0.22 W @ −4.5 V
P−Ch −8.0 V
−0.775 A
0.32 W @ −2.5 V
0.51 W @ −1.8 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
N−Ch
Drain−to−Source Voltage
Symbol
Value
Unit
VDSS
20
V
P−Ch
N−Ch
Gate−to−Source Voltage
−8.0
VGS
P−Ch
Continuous Drain Current
− Steady State
(Based on RqJA)
N−Ch
Continuous Drain Current
− Steady State
(Based on RqJL)
N−Ch
P−Ch
P−Ch
TA = 25°C
±12
V
±8.0
ID
0.63
TA = 85°C
0.46
TA = 25°C
−0.775
TA = 85°C
−0.558
TA = 25°C
0.91
TA = 85°C
0.65
TA = 25°C
−1.1
TA = 85°C
−0.8
tp ≤ 10 ms
IDM
±1.2
A
TA = 25°C
PD
0.27
W
TA = 85°C
0.14
Power Dissipation − Steady State
(Based on RqJL)
TA = 25°C
0.55
TA = 85°C
0.29
Source Current (Body Diode)
N−Ch
IS
P−Ch
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction−to−Lead (Drain)
– Steady State
Typ
RqJA
Max
Typ
−55 to
150
°C
0.63
A
260
Max
400
°C/W
March, 2006 − Rev. 2
2
5
G2
D2
3
4
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
1
TC M G
G
SC−88/SOT−363
CASE 419B
STYLE 28
1
S1 G1 D2
TC
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
194
ORDERING INFORMATION
226
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
© Semiconductor Components Industries, LLC, 2006
G1
°C
460
RqJL
D1
D1 G2 S2
THERMAL RESISTANCE RATINGS (Note 1)
Junction−to−Ambient
– Steady State
6
6
−0.775
TL
1
Top View
Power Dissipation − Steady State
(Based on RqJA)
TJ,
TSTG
S1
A
Pulsed Drain Current
Operating Junction and Storage Temperature
SOT−363
SC−88 (6−LEADS)
1
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
NTJD4105C/D
NTJD4105C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
N/P
Drain−to−Source
Breakdown Voltage
V(BR)DSS
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS
/ TJ
N
P
N
Parameter
Test Condition
Min
Typ
20
−8.0
27
−10.5
22
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source
Leakage Current
IGSS
VGS = 0 V
ID = 250 mA
ID = −250 mA
P
N
P
N
P
V
mV/ °C
−6.0
VGS = 0 V, VDS = 16 V
VGS = 0 V, VDS = −6.4 V
TJ = 25 °C
VDS = 0 V
VGS = ±12 V
VGS = ±8.0
VGS = VDS
ID = 250 mA
ID = −250 mA
1.0
1.0
10
10
mA
1.5
−1.0
V
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
Gate Threshold
Temperature Coefficient
VGS(TH) /
TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
N
P
N
P
N
P
N
P
P
N
P
0.6
−0.45
VGS = 4.5 V ID = 0.63 A
VGS = −4.5 V, ID = −0.57 A
VGS = 2.5 V, ID = 0.40 A
VGS = −2.5 V, ID = −0.48 A
VGS = −1.8 V, ID = −0.20 A
VDS = 4.0 V ID = 0.63 A
VDS = −4.0 V, ID = −0.57 A
0.92
−0.83
−2.1
2.2
0.29
0.22
0.36
0.32
0.51
2.0
2.0
VDS = 20 V
VDS = −8.0V
VDS = 20 V
f = 1 MHz, VGS = 0 V
VDS = −8.0 V
VDS = 20 V
VDS = −8.0 V
VGS = 4.5 V, VDS = 10 V, ID = 0.7 A
VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A
VGS = 4.5 V, VDS = 10 V, ID = 0.7 A
VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A
VGS = 4.5 V, VDS = 10 V, ID = 0.7 A
VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A
VGS = 4.5 V, VDS = 10 V, ID = 0.7 A
VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A
33
160
13
38
2.8
28
1.3
2.2
0.1
0.1
0.2
0.5
0.4
0.5
−mV/ °C
0.375
0.30
0.445
0.46
0.90
W
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
N
P
N
P
N
P
N
P
N
P
N
P
N
P
46
225
22
55
5.0
40
3.0
4.0
pF
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
td(ON)
tr
td(OFF)
tf
N
VGS = 4.5 V, VDD = 10 V,
ID = 0.5 A, RG = 20 W
P
VGS = −4.5 V, VDD = −4.0 V,
ID = −0.5 A, RG = 8.0 W
ms
0.083
0.227
0.786
0.506
0.013
0.023
0.050
0.036
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
N
P
N
P
N
P
VGS = 0 V, TJ = 25°C
VGS = 0 V, TJ = 125°C
VGS = 0 V,
dIS/dt = 90 A/ms
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
IS = 0.23 A
IS = −0.23 A
IS = 0.23 A
IS = −0.23 A
IS = 0.23 A
IS = −0.23 A
0.76
0.76
0.63
0.63
0.410
0.078
1.1
1.1
V
ms
NTJD4105C
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 4.5 V to 2.2 V
1.2
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)
VGS = 2 V
1.8 V
1
0.8
1.6 V
0.6
0.4
1.4 V
0.2
0.7
1
0.8
0.6
0.4
TJ = 125°C
0.2
25°C
1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1.2
TJ = 25°C
2
4
6
8
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
0.4
0.8
1.2
2
1.6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = 4.5 V
0.6
0.5
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
TJ = −55°C
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
1.4
0.4
1
0.8
0.6
ID, DRAIN CURRENT (AMPS)
0.2
1.2
1.4
0.7
TJ = 125°C
0.5
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.2
0.6
0.4
1
0.8
ID, DRAIN CURRENT (AMPS)
1.4
80
ID = 0.63 A
VGS = 4.5 V
and 2.5 V
TJ = 25°C
C, CAPACITANCE (pF)
VGS = 0 V
1.6
1.4
1.2
1
60
40
Ciss
20
Coss
0.8
0.6
−50
1.2
Figure 4. On−Resistance vs. Drain Current and
Temperature
2
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = 2.5 V
0.6
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
2.4
Crss
−25
0
25
50
75
100
125
150
0
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
20
NTJD4105C
5
0.7
QG(TOT)
4
IS, SOURCE CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS
3
QGS
2
1
0
QGD
ID = 0.63 A
TJ = 25°C
0
0.2
0.4
0.6
0.8
1
Qg, TOTAL GATE CHARGE (nC)
1.2
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
1.4
0
0.2
0.4
0.6
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
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4
1
NTJD4105C
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = −4.5 V to −2.6 V
VGS = −2.2 V
−2 V
−1.8 V
1
0.8
−1.6 V
0.6
0.4
−1.4 V
0.2
−1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
TJ = 25°C
0.5
2
4
6
VDS ≥ −10 V
1.2
1
0.8
0.6
TJ = 125°C
0.4
25°C
0.2
TJ = −55°C
0
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.6
0.4
0.8
1.2
2
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 9. On−Region Characteristics
Figure 10. Transfer Characteristics
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
1.4
VGS = −4.5 V
0.4
0.3
TJ = 125°C
TJ = 25°C
0.2
TJ = −55°C
0.1
0
0.2
0
0.6
0.8
0.4
1
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
0.5
VGS = −2.5 V
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.6
0.4
0.8
1
−ID, DRAIN CURRENT (AMPS)
300
ID = −0.7 A
VGS = −4.5 V
and −2.5 V
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.2
1
0.8
0.6
−50
0.2
−25
0
25
50
75
100
125
1.2
1.4
Figure 12. On−Resistance vs. Drain Current
and Temperature
Figure 11. On−Resistance vs. Drain Current
and Temperature
1.4
2.4
150
TJ = 25°C
VGS = 0 V
240
Ciss
180
120
Coss
60
0
−8
Crss
−6
−4
−2
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. On−Resistance Variation with
Temperature
Figure 14. Capacitance Variation
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5
0
NTJD4105C
5
0.7
QG(TOT)
4
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS
3
QGS
2
1
0
QGD
ID = −0.6 A
TJ = 25°C
0
0.4
0.8
1.2
1.6
2
Qg, TOTAL GATE CHARGE (nC)
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
2.4
0
0.2
0.4
0.6
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 15. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 16. Diode Forward Voltage vs. Current
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1
NTJD4105C
ORDERING INFORMATION
Package
Shipping†
NTJD4105CT1
SOT−363
3000 / Tape & Reel
NTJD4105CT1G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD4105CT2
SOT−363
3000 / Tape & Reel
NTJD4105CT2G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD4105CT4
SOT−363
10,000 / Tape & Reel
NTJD4105CT4G
SOT−363
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
NTJD4105C
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.95
1.10
A1 0.00
0.05
0.10
A3
0.20 REF
b
0.10
0.21
0.30
C
0.10
0.14
0.25
D
1.80
2.00
2.20
E
1.15
1.25
1.35
e
0.65 BSC
L
0.10
0.20
0.30
HE
2.00
2.10
2.20
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
A3
6
5
4
HE
C
−E−
1
2
3
L
b 6 PL
0.2 (0.008)
M
E
M
A
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
SOLDERING FOOTPRINT*
A1
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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NTJD4105C/D