ONSEMI NTJD4105CT2

NTJD4105C
Small Signal MOSFET
20 V / −8.0 V, Complementary,
+0.63 A / −0.775 A, SC−88
Features
•
•
•
•
•
Complementary N and P Channel Device
Leading −8.0 V Trench for Low RDS(on) Performance
ESD Protected Gate − ESD Rating: Class 1
SC−88 Package for Small Footprint (2 x 2 mm)
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
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0.22 @ −4.5 V
0.32 @ −2.5 V
P−Ch −8.0 V
N−Ch
SOT−363
SC−88 (6−LEADS)
Symbol
Value
Unit
VDSS
20
V
P−Ch
N−Ch
Gate−to−Source
Ga
e o Sou ce Voltage
o age
N−Ch
C
Co
Continuous
uous Drain
a Current
Cu e
− Steady
St d State
St t
(Based on RJL)
N−Ch
C
P−Ch
C
P−Ch
C
TA=25°C
VGS
±12
V
±8.0
ID
0.63
TA=85°C
0.46
TA=25°C
−0.775
TA=85°C
−0.558
TA=25°C
0.91
TA=85°C
0.65
TA=25°C
−1.1
TA=85°C
−0.8
A
Power
o e Dissipation
ss a o − S
Steady
eady S
State
ae
(B
(Based
d on RJA)
TA=25°C
PD
0.27
W
TA=85°C
0.14
Power
o e Dissipation
ss a o − S
Steady
eady S
State
ae
(B
(Based
d on RJL)
TA=25°C
0.55
TA=85°C
0.29
Ju c o o ead (Drain)
Junction−to−Lead
( a )
– Steady
St d State
St t
°C
IS
0.63
A
Max
G2
D2
3
4
S2
SC−88 (SOT−363)
CASE 419B
Style 26
1
Gate−1
°C
260
TC
D
RJA
Drain−1
Gate−2
Source−2
Top View
= Specific Device Code
= Date Code
°C/W
C/
400
460
RJL
6
Source−1
Drain−2
−0.775
TL
Max
Typ
5
TCD
−55 to
150
THERMAL RESISTANCE RATINGS (Note 1)
Typ
2
MARKING DIAGRAM
& PIN ASSIGNMENT
TJ,
TSTG
P−Ch
Junction−to−Ambient
Ju c o o
be
– Steady
St d State
St t
G1
1
±1.2
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
D1
6
IDM
N−Ch
6
Top View
tp≤10 s
Source
Sou
ce Cu
Current
e ((Body
ody Diode)
ode)
1
A
Pulsed Drain Current
Operating Junction and Storage Temperature
S1
−8.0
P−Ch
Continuous
Co
uous Drain
a Current
Cu e
St d State
St t
− Steady
(Based on RJA)
−0.775 A
0.51 @ −1.8 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
0.63 A
0.36 @ 2.5 V
DC−DC Conversion
Load/Power Switching
Single or Dual Cell Li−Ion Battery Supplied Devices
Cell Phones, MP3s, Digital Cameras, PDAs
Drain−to−Source
a
o Sou ce Voltage
o age
ID MAX
0.29 @ 4.5 V
N−Ch 20 V
Applications
•
•
•
•
RDS(on) TYP
V(BR)DSS
ORDERING INFORMATION
194
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
226
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
 Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 1
1
Publication Order Number:
NTJD4105C/D
NTJD4105C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
N/P
Drain−to−Source
a
o Sou ce
Breakdown Voltage
V(BR)DSS
Drain−to−Source
a
o Sou ce Breakdown
ea do
Voltage Temperature Coefficient
V(BR)DSS
/ TJ
N
P
N
P
N
P
N
P
Parameter
Test Condition
Min
Typ
20
−8.0
27
−10.5
22
−6.0
Max
Units
OFF CHARACTERISTICS
Zero
e o Gate
Ga e Voltage
o age Drain
a Current
Cu e
IDSS
Ga e o Sou ce
Gate−to−Source
Leakage Current
IGSS
VGS=0 V
ID=250 A
ID=−250 A
VGS=0 V, VDS=16 V
VGS=0 V, VDS=−6.4 V
TJ=25 °C
VDS=0 V
VGS=±12 V
VGS=±8.0
VGS=VDS
ID=250 A
ID=−250 A
V
mV// °C
C
1.0
1.0
10
10
A
1.5
−1.0
V
A
ON CHARACTERISTICS (Note 2)
Gate
Ga
e Threshold
es o d Voltage
o age
VGS(TH)
Ga e Threshold
Gate
es o d
Temperature Coefficient
VGS(TH) /
TJ
Drain−to−Source
a
o Sou ce O
On Resistance
es s a ce
Forward
o a d Transconductance
a sco duc a ce
RDS(on)
gFS
N
P
N
P
N
P
N
P
P
N
P
0.6
−0.45
VGS=4.5 V ID=0.63 A
VGS=−4.5 V, ID=−0.57 A
VGS=2.5 V, ID=0.40 A
VGS=−2.5 V, ID=−0.48 A
VGS=−1.8 V, ID=−0.20 A
VDS=4.0 V ID=0.63 A
VDS=−4.0 V, ID=−0.57 A
0.92
−0.83
−2.1
2.2
0.29
0.22
0.36
0.32
0.51
2.0
2.0
N
P
N
P
N
P
N
P
N
P
N
P
N
P
VDS=20 V
VDS=−8.0V
VDS=20 V
f=1 MHz,
MHz VGS=0 V
VDS=−8.0 V
VDS=20 V
VDS=−8.0 V
VGS=4.5 V, VDS=10 V, ID=0.7 A
VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A
VGS=4.5 V, VDS=10 V, ID=0.7 A
VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A
VGS=4.5 V, VDS=10 V, ID=0.7 A
VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A
VGS=4.5 V, VDS=10 V, ID=0.7 A
VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A
33
160
13
38
2.8
28
1.3
2.2
0.1
0.1
0.2
0.5
0.4
0.5
−mV// °C
C
0.375
0.30
0.445
0.46
0.90
S
CHARGES AND CAPACITANCES
Input
u Capacitance
Ca ac a ce
CISS
Output
Ou
u Capacitance
Ca ac a ce
COSS
Reverse
e e se Transfer
a s e Ca
Capacitance
ac a ce
CRSS
Total
o a Gate
Ga e Charge
C a ge
QG(TOT)
Threshold
es o d Gate
Ga e Charge
C a ge
QG(TH)
Gate−to−Source
Ga
e o Sou ce Charge
C a ge
QGS
Gate−to−Drain
Ga
e o
a Charge
C a ge
QGD
46
225
22
55
5.0
40
3.0
4.0
pF
nC
C
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
td(ON)
tr
td(OFF)
tf
N
VGS=4.5
4.5 V, VDD=10
10 V,
ID=0.5 A,, RG=20 P
VGS=−4.5
4.5 V, VDD=−4.0
4.0 V,
ID=−0.5 A,, RG=8.0 s
0.083
0.227
0.786
0.506
0.013
0.023
0.050
0.036
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward
o a d Diode
ode Voltage
o age
Reverse
e e se Recovery
eco e y Time
e
VSD
tRR
N
P
N
P
N
P
V TJ=25°C
VGS=0 V,
VGS=0 V,
V TJ=125°C
VGS=0
0 V,
dIS/dt=90 A/s
2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
IS=0.23 A
IS=−0.23 A
IS=0.23 A
IS=−0.23 A
IS=0.23 A
IS=−0.23 A
0.76
0.76
0.63
0.63
0.410
0.078
1.1
1.1
V
s
NTJD4105C
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.2
VGS = 4.5 V to 2.2 V
1.2
TJ = 25°C
VDS ≥ 10 V
VGS = 2 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
1.4
1.8 V
1
0.8
1.6 V
0.6
0.4
1.4 V
0.2
1
0.8
0.6
0.4
TJ = 125°C
0.2
25°C
1.2 V
0.7
TJ = −55°C
0
2
4
6
8
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.6
0.4
0.8
1.2
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0
0
VGS = 4.5 V
0.6
0.5
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.4
1
0.8
0.6
ID, DRAIN CURRENT (AMPS)
0.2
1.2
1.4
0.7
TJ = 125°C
0.5
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
0.2
0.4
1
0.6
0.8
ID, DRAIN CURRENT (AMPS)
1.4
80
ID = 0.63 A
VGS = 4.5 V
and 2.5 V
TJ = 25°C
C, CAPACITANCE (pF)
VGS = 0 V
1.6
1.4
1.2
1
60
40
Ciss
20
Coss
0.8
0.6
−50
1.2
Figure 4. On−Resistance vs. Drain Current and
Temperature
2
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = 2.5 V
0.6
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
2.4
Crss
0
−25
0
25
50
75
100
125
150
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
20
NTJD4105C
0.7
5
QG(TOT)
IS, SOURCE CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
VGS
3
QGS
2
QGD
1
ID = 0.63 A
TJ = 25°C
0
0
0.2
0.4
0.6
0.8
1
Qg, TOTAL GATE CHARGE (nC)
1.2
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
1.4
0
0.2
0.4
0.6
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
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4
1
NTJD4105C
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = −4.5 V to −2.6 V
VGS = −2.2 V
−2 V
−1.8 V
1
0.8
−1.6 V
0.6
0.4
−1.4 V
0.2
−1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
TJ = 25°C
0.5
VDS ≥ −10 V
1.2
1
0.8
0.6
TJ = 125°C
0.4
25°C
0.2
TJ = −55°C
0
2
4
6
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
0.4
0.8
1.2
2
1.6
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 9. On−Region Characteristics
Figure 10. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
−ID, DRAIN CURRENT (AMPS)
1.4
VGS = −4.5 V
0.4
0.3
TJ = 125°C
TJ = 25°C
0.2
TJ = −55°C
0.1
0
0
0.2
0.8
0.6
0.4
1
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
0.5
VGS = −2.5 V
TJ = 125°C
0.4
TJ = 25°C
0.3
TJ = −55°C
0.2
0.1
0
0
1.6
0.4
1
0.8
0.6
−ID, DRAIN CURRENT (AMPS)
1.2
1.4
300
TJ = 25°C
ID = −0.7 A
VGS = −4.5 V
and −2.5 V
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.2
Figure 12. On−Resistance vs. Drain Current
and Temperature
Figure 11. On−Resistance vs. Drain Current
and Temperature
1.4
2.4
1.2
1
0.8
VGS = 0 V
240
Ciss
180
120
Coss
60
Crss
0.6
−50
−25
0
25
50
75
100
125
150
0
−8
−6
−4
−2
TJ, JUNCTION TEMPERATURE (°C)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 13. On−Resistance Variation with
Temperature
Figure 14. Capacitance Variation
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5
0
NTJD4105C
0.7
5
QG(TOT)
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
VGS
3
QGS
2
QGD
1
ID = −0.6 A
TJ = 25°C
0
0
0.4
0.8
1.2
1.6
2
Qg, TOTAL GATE CHARGE (nC)
VGS = 0 V
0.6
0.5
0.4
0.3
0.2
TJ = 150°C
0.1
TJ = 25°C
0
2.4
0
0.2
0.4
0.6
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 15. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 16. Diode Forward Voltage vs. Current
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6
1
NTJD4105C
ORDERING INFORMATION1
Package
Shipping†
NTJD4105CT1
SOT−363
3000 / Tape & Reel
NTJD4105CT1G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD4105CT2
SOT−363
3000 / Tape & Reel
NTJD4105CT2G
SOT−363
(Pb−Free)
3000 / Tape & Reel
NTJD4105CT4
SOT−363
10,000 / Tape & Reel
NTJD4105CT4G
SOT−363
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
NTJD4105C
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
G
6
5
DIM
A
B
C
D
G
H
J
K
N
S
4
−B−
S
1
2
3
D 6 PL
0.2 (0.008)
M
B
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
M
N
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
SC−88/SC70−6
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5773−3850
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8
For additional information, please contact your
local Sales Representative.
NTJD4105C/D