NTJD4105C Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88 Features • • • • • Complementary N and P Channel Device Leading −8.0 V Trench for Low RDS(on) Performance ESD Protected Gate − ESD Rating: Class 1 SC−88 Package for Small Footprint (2 x 2 mm) Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish http://onsemi.com 0.22 @ −4.5 V 0.32 @ −2.5 V P−Ch −8.0 V N−Ch SOT−363 SC−88 (6−LEADS) Symbol Value Unit VDSS 20 V P−Ch N−Ch Gate−to−Source Ga e o Sou ce Voltage o age N−Ch C Co Continuous uous Drain a Current Cu e − Steady St d State St t (Based on RJL) N−Ch C P−Ch C P−Ch C TA=25°C VGS ±12 V ±8.0 ID 0.63 TA=85°C 0.46 TA=25°C −0.775 TA=85°C −0.558 TA=25°C 0.91 TA=85°C 0.65 TA=25°C −1.1 TA=85°C −0.8 A Power o e Dissipation ss a o − S Steady eady S State ae (B (Based d on RJA) TA=25°C PD 0.27 W TA=85°C 0.14 Power o e Dissipation ss a o − S Steady eady S State ae (B (Based d on RJL) TA=25°C 0.55 TA=85°C 0.29 Ju c o o ead (Drain) Junction−to−Lead ( a ) – Steady St d State St t °C IS 0.63 A Max G2 D2 3 4 S2 SC−88 (SOT−363) CASE 419B Style 26 1 Gate−1 °C 260 TC D RJA Drain−1 Gate−2 Source−2 Top View = Specific Device Code = Date Code °C/W C/ 400 460 RJL 6 Source−1 Drain−2 −0.775 TL Max Typ 5 TCD −55 to 150 THERMAL RESISTANCE RATINGS (Note 1) Typ 2 MARKING DIAGRAM & PIN ASSIGNMENT TJ, TSTG P−Ch Junction−to−Ambient Ju c o o be – Steady St d State St t G1 1 ±1.2 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) D1 6 IDM N−Ch 6 Top View tp≤10 s Source Sou ce Cu Current e ((Body ody Diode) ode) 1 A Pulsed Drain Current Operating Junction and Storage Temperature S1 −8.0 P−Ch Continuous Co uous Drain a Current Cu e St d State St t − Steady (Based on RJA) −0.775 A 0.51 @ −1.8 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter 0.63 A 0.36 @ 2.5 V DC−DC Conversion Load/Power Switching Single or Dual Cell Li−Ion Battery Supplied Devices Cell Phones, MP3s, Digital Cameras, PDAs Drain−to−Source a o Sou ce Voltage o age ID MAX 0.29 @ 4.5 V N−Ch 20 V Applications • • • • RDS(on) TYP V(BR)DSS ORDERING INFORMATION 194 See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 226 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 1 1 Publication Order Number: NTJD4105C/D NTJD4105C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol N/P Drain−to−Source a o Sou ce Breakdown Voltage V(BR)DSS Drain−to−Source a o Sou ce Breakdown ea do Voltage Temperature Coefficient V(BR)DSS / TJ N P N P N P N P Parameter Test Condition Min Typ 20 −8.0 27 −10.5 22 −6.0 Max Units OFF CHARACTERISTICS Zero e o Gate Ga e Voltage o age Drain a Current Cu e IDSS Ga e o Sou ce Gate−to−Source Leakage Current IGSS VGS=0 V ID=250 A ID=−250 A VGS=0 V, VDS=16 V VGS=0 V, VDS=−6.4 V TJ=25 °C VDS=0 V VGS=±12 V VGS=±8.0 VGS=VDS ID=250 A ID=−250 A V mV// °C C 1.0 1.0 10 10 A 1.5 −1.0 V A ON CHARACTERISTICS (Note 2) Gate Ga e Threshold es o d Voltage o age VGS(TH) Ga e Threshold Gate es o d Temperature Coefficient VGS(TH) / TJ Drain−to−Source a o Sou ce O On Resistance es s a ce Forward o a d Transconductance a sco duc a ce RDS(on) gFS N P N P N P N P P N P 0.6 −0.45 VGS=4.5 V ID=0.63 A VGS=−4.5 V, ID=−0.57 A VGS=2.5 V, ID=0.40 A VGS=−2.5 V, ID=−0.48 A VGS=−1.8 V, ID=−0.20 A VDS=4.0 V ID=0.63 A VDS=−4.0 V, ID=−0.57 A 0.92 −0.83 −2.1 2.2 0.29 0.22 0.36 0.32 0.51 2.0 2.0 N P N P N P N P N P N P N P VDS=20 V VDS=−8.0V VDS=20 V f=1 MHz, MHz VGS=0 V VDS=−8.0 V VDS=20 V VDS=−8.0 V VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A 33 160 13 38 2.8 28 1.3 2.2 0.1 0.1 0.2 0.5 0.4 0.5 −mV// °C C 0.375 0.30 0.445 0.46 0.90 S CHARGES AND CAPACITANCES Input u Capacitance Ca ac a ce CISS Output Ou u Capacitance Ca ac a ce COSS Reverse e e se Transfer a s e Ca Capacitance ac a ce CRSS Total o a Gate Ga e Charge C a ge QG(TOT) Threshold es o d Gate Ga e Charge C a ge QG(TH) Gate−to−Source Ga e o Sou ce Charge C a ge QGS Gate−to−Drain Ga e o a Charge C a ge QGD 46 225 22 55 5.0 40 3.0 4.0 pF nC C SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf N VGS=4.5 4.5 V, VDD=10 10 V, ID=0.5 A,, RG=20 P VGS=−4.5 4.5 V, VDD=−4.0 4.0 V, ID=−0.5 A,, RG=8.0 s 0.083 0.227 0.786 0.506 0.013 0.023 0.050 0.036 DRAIN−SOURCE DIODE CHARACTERISTICS Forward o a d Diode ode Voltage o age Reverse e e se Recovery eco e y Time e VSD tRR N P N P N P V TJ=25°C VGS=0 V, VGS=0 V, V TJ=125°C VGS=0 0 V, dIS/dt=90 A/s 2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 IS=0.23 A IS=−0.23 A IS=0.23 A IS=−0.23 A IS=0.23 A IS=−0.23 A 0.76 0.76 0.63 0.63 0.410 0.078 1.1 1.1 V s NTJD4105C TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.2 VGS = 4.5 V to 2.2 V 1.2 TJ = 25°C VDS ≥ 10 V VGS = 2 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.4 1.8 V 1 0.8 1.6 V 0.6 0.4 1.4 V 0.2 1 0.8 0.6 0.4 TJ = 125°C 0.2 25°C 1.2 V 0.7 TJ = −55°C 0 2 4 6 8 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.6 0.4 0.8 1.2 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0 0 VGS = 4.5 V 0.6 0.5 TJ = 125°C 0.4 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 0.4 1 0.8 0.6 ID, DRAIN CURRENT (AMPS) 0.2 1.2 1.4 0.7 TJ = 125°C 0.5 0.4 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 0.2 0.4 1 0.6 0.8 ID, DRAIN CURRENT (AMPS) 1.4 80 ID = 0.63 A VGS = 4.5 V and 2.5 V TJ = 25°C C, CAPACITANCE (pF) VGS = 0 V 1.6 1.4 1.2 1 60 40 Ciss 20 Coss 0.8 0.6 −50 1.2 Figure 4. On−Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = 2.5 V 0.6 Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 2.4 Crss 0 −25 0 25 50 75 100 125 150 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTJD4105C 0.7 5 QG(TOT) IS, SOURCE CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 4 VGS 3 QGS 2 QGD 1 ID = 0.63 A TJ = 25°C 0 0 0.2 0.4 0.6 0.8 1 Qg, TOTAL GATE CHARGE (nC) 1.2 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 TJ = 150°C 0.1 TJ = 25°C 0 1.4 0 0.2 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTJD4105C TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = −4.5 V to −2.6 V VGS = −2.2 V −2 V −1.8 V 1 0.8 −1.6 V 0.6 0.4 −1.4 V 0.2 −1.2 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () −ID, DRAIN CURRENT (AMPS) 1.2 1.4 TJ = 25°C 0.5 VDS ≥ −10 V 1.2 1 0.8 0.6 TJ = 125°C 0.4 25°C 0.2 TJ = −55°C 0 2 4 6 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 0.4 0.8 1.2 2 1.6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 9. On−Region Characteristics Figure 10. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE () −ID, DRAIN CURRENT (AMPS) 1.4 VGS = −4.5 V 0.4 0.3 TJ = 125°C TJ = 25°C 0.2 TJ = −55°C 0.1 0 0 0.2 0.8 0.6 0.4 1 −ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.5 VGS = −2.5 V TJ = 125°C 0.4 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 1.6 0.4 1 0.8 0.6 −ID, DRAIN CURRENT (AMPS) 1.2 1.4 300 TJ = 25°C ID = −0.7 A VGS = −4.5 V and −2.5 V C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.2 Figure 12. On−Resistance vs. Drain Current and Temperature Figure 11. On−Resistance vs. Drain Current and Temperature 1.4 2.4 1.2 1 0.8 VGS = 0 V 240 Ciss 180 120 Coss 60 Crss 0.6 −50 −25 0 25 50 75 100 125 150 0 −8 −6 −4 −2 TJ, JUNCTION TEMPERATURE (°C) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 13. On−Resistance Variation with Temperature Figure 14. Capacitance Variation http://onsemi.com 5 0 NTJD4105C 0.7 5 QG(TOT) −IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 4 VGS 3 QGS 2 QGD 1 ID = −0.6 A TJ = 25°C 0 0 0.4 0.8 1.2 1.6 2 Qg, TOTAL GATE CHARGE (nC) VGS = 0 V 0.6 0.5 0.4 0.3 0.2 TJ = 150°C 0.1 TJ = 25°C 0 2.4 0 0.2 0.4 0.6 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 15. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 16. Diode Forward Voltage vs. Current http://onsemi.com 6 1 NTJD4105C ORDERING INFORMATION1 Package Shipping† NTJD4105CT1 SOT−363 3000 / Tape & Reel NTJD4105CT1G SOT−363 (Pb−Free) 3000 / Tape & Reel NTJD4105CT2 SOT−363 3000 / Tape & Reel NTJD4105CT2G SOT−363 (Pb−Free) 3000 / Tape & Reel NTJD4105CT4 SOT−363 10,000 / Tape & Reel NTJD4105CT4G SOT−363 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 NTJD4105C PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE T A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. G 6 5 DIM A B C D G H J K N S 4 −B− S 1 2 3 D 6 PL 0.2 (0.008) M B INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 M N J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC−88/SC70−6 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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