Ultra-High Linearity SPDT Switch CXM3592AUR Description The CXM3592AUR is a high power and ultra-high linearity SPDT switch for wireless communication systems. The CXM3592AUR can be used for SVLTE and carrier aggregation requiring very high linearity. This IC has a 1.8 V CMOS compatible decoder. The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and ultra-high linearity. (Application: LTE/CDMA/GSM/UMTS Handsets and mini base-stations) Features ◆ Insertion loss: 0.22 dB (Typ.) (Cellular Band / GSM Low Band) 0.43 dB (Typ.) (IMT2000 / GSM High Band) ◆ Ultra-high linearity: IMD3 = –104 dBm (Max.), IIP3 = 82 dBm (Min.) at LTE Band 13, PTx = +23 dBm, PBlocker = +14 dBm ◆ Low voltage operation: VDD = 2.5 V ◆ No DC blocking capacitors required on RF ports ◆ 1 control input ◆ Small package size: UQFN-12 pin (2.0 mm × 2.0 mm) ◆ Lead-Free and RoHS compliant Structure GaAs JPHEMT MMIC switch, CMOS decoder Moisture Sensitivity Moisture Sensitivity Level for this part is MSL = 2. Absolute Maximum Ratings ♦ Bias voltage VDD ♦ Control voltage Vctl ♦ Maximum input power 4 V (Ta = 25 ˚C) (Ta = 25 ˚C) 4 V 36 dBm ♦ Operating temperature Topr –35 to +90 ˚C ♦ Storage temperature Tstg –65 to +150 ˚C (Duty cycle = 12.5 to 50 %, Ta = 25 ˚C) This IC is ESD sensitive device. Special handling precautions are required. 1 Block Diagram SPDT Antenna Switch RF2 RF1 RF3 MMIC Switch CTL CMOS Decoder VDD MMIC Switch F1 RF2 RF1 F2 RF3 Truth Table CTL Active path F1 F2 L RF1-RF2 ON OFF H RF1-RF3 OFF ON 2 Pin Configuration GND RF1 GND (Top View) 6 5 4 GND 7 3 GND UQFN-12P PKG RF2 8 2 RF3 2.0 mm × 2.0 mm VDD 10 11 12 CTL 1 GND GND GND 9 DC Bias Condition Parameter Min. Typ. Max. VDD 2.5 2.7 3.3 Vctl (H) 1.35 1.8 3.3 Vctl (L) 0 — 0.45 Unit V 3 Electrical Characteristics (Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V) Item Symbol Path RF1-RF2 Insertion loss IL RF1-RF3 RF1-RF2 Isolation ISO. RF1-RF3 VSWR VSWR All ports in active paths 2fo Condition Min. Typ. Max. *1, *2, *6, *8 ― 0.22 0.37 *3, *4, *7, *9 ― 0.43 0.58 *5 ― 0.57 0.77 *1, *2, *6, *8 ― 0.22 0.37 *3, *4, *7, *9 ― 0.43 0.58 *5 ― 0.57 0.77 *1, *2, *6, *8 18 21 ― *3, *4, *7, *9 11 14 ― *5 9 12 ― *1, *2, *6, *8 18 21 ― *3, *4, *7, *9 11 14 ― *5 9 12 ― 700 to 2700 MHz ― ― 1.5 ― –60 –41 ― –68 –41 ― –66 –45 ― –72 –45 ― –80 –50 ― –90 –50 *6 3fo 2fo Harmonics 3fo RF1-RF2, RF3 *7 2fo *2, *3, *5 3fo Inter modulation distortion in Rx Band Unit dB dB ― dBm 2fo *1 ― –82 –78 IMD2 *10, *11, *12, *15, *16, *19, *20, *23, *24 ― ― –110 *10, *13, *14, *17, *18, *21, *22, *25, *26 ― ― –110 *10, *27 ― ― –104 dBm *10, *28 ― ― –110 dBm IMD3 RF1-RF2, RF3 dBm Switching speed Ts 50 % Ctl to 90 % RF ― 9 13 µs Wakeup time Twu VDD = 2.5 V to 90 % RF, Pin = 0 dBm ― 9 20 µs Control current Ictl Vctl = 1.8 V ― 1 5 µA Supply current Idd VDD = 2.7 V ― 0.14 0.35 mA Electrical characteristics are measured with all RF ports terminated in 50 Ω. *1 *2 *3 *4 *5 *6 *7 *8 *9 *10 Pin = 25 dBm, 704 to 787 MHz (Band 13, Band 17) Pin = 26 dBm, 824 to 960 MHz (Band 5, Band 8) Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx) Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx) Pin = 26 dBm, 2500 to 2690 MHz (Band 7) Pin = 35 dBm, 824 to 915 MHz (GSM850/900 Tx) Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx) Pin = 10 dBm, 869 to 960 MHz (GSM850/900 Rx) Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx) Measured with the recommended circuit. 4 IMD Condition (1) Band Band 1 Band 2 Band 5 Band 7 fRx on RF [MHz] 2140 1960 880 2655 fTx +20 dBm on RF [MHz] fBlocker –15 dBm on RF1 [MHz] 1950 1880 835 2535 IMD condition IMD2 (fRx – fTx) 190 *11 IMD2 (fRx + fTx) 4090 *12 IMD3 (2fTx – fRx) 1760 *13 IMD3 (2fTx + fRx) 6040 *14 IMD2 (fRx – fTx) 80 *15 IMD2 (fRx + fTx) 3840 *16 IMD3 (2fTx – fRx) 1800 *17 IMD3 (2fTx + fRx) 5720 *18 IMD2 (fRx – fTx) 45 *19 IMD2 (fRx + fTx) 1715 *20 IMD3 (2fTx – fRx) 790 *21 IMD3 (2fTx + fRx) 2550 *22 IMD2 (fRx – fTx) 120 *23 IMD2 (fRx + fTx) 5190 *24 IMD3 (2fTx – fRx) 2415 *25 IMD3 (2fTx + fRx) 7725 *26 IMD Condition (2) Band fRx on RF [MHz] fTx PTx = +23 dBm on RF [MHz] Band 13 747 786 IMD3 (2fTx – fRx) 825 *27 BC0 872 782 IMD3 (fTx + fRx)/2 827 *28 fBlocker PBlocker = +14 dBm on RF1 [MHz] 5 IMD condition Triple Beat Ratio (VDD = 2.5 V, Ta = 25 °C) Condition Item Triple beat ratio Symbol TBR Path RF1 - RF2, RF3 Input power at RF [dBm] Tx1 at RF* [MHz] Tx2 at RF* [MHz] Jammer at RF1 –30 dBm [MHz] Triple beat product at RF* [MHz] 21.5 835.5 836.5 881.5 21.5 1880 1881 13.5 1732 1733 Min. Typ. Max. 881.5 ± 1 88 ― ― 1960 1960 ± 1 88 ― ― 2132 2132 ± 1 88 ― ― Unit dBc * Electrical characteristics are measured with all RF ports terminated in 50 Ω. Measured with the recommended circuit. IIP2 (VDD = 2.5 V, Ta = 25 °C) Condition Item Input IP2 Symbol IIP2 Path RF1 - RF2, RF3 Tx at RF* 24 dBm [MHz] Jammer at RF1 –20 dBm [MHz] IM2 product at RF* [MHz] Min. Typ. Max. 836.61 1718.61 881.61 113.5 ― ― 836.61 45 881.61 95.5 ― ― 1885 3850 1965 95.5 ― ― 1885 80 1965 95.5 ― ― 1732.5 3865 2132.5 95.5 ― ― 1732.5 400 2132.5 95.5 ― ― * Electrical characteristics are measured with all RF ports terminated in 50 Ω. Measured with the recommended circuit. 6 Unit dBm Recommended Circuit RF1 C1 L1 6 RF2 5 4 7 3 8 2 9 1 10 11 12 C2 VDD CTL ∗1 No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias) ∗2 The DC levels of all RF ports are GND. ∗3 L1 (27 nH) and C1 (12 pF) are recommended on RF1 port for ESD protection. ∗4 C2 (100 pF) is recommended on VDD pin for Decoupling Capacitor. 7 RF3 Recommended Land Pattern 8 Package Outline Product Code ： 875340755 (Unit: mm) 9 Package Outline Product Code ： 875342695 (Unit: mm) 10 Marking Product Code ： 875340755 11 Marking Product Code ： 875342695 12 Tape and Reel Size CXM3592AUR-T9 Product Code：875340755 13 Tape and Reel Size CXM3592AUR-T9 Product Code：875342695 14 Note Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. 15