Ultra-High Linearity DPDT Switch CXM3645ER Description The CXM3645ER is a high power and ultra-high linearity DPDT switch for wireless communication systems. The CXM3645ER can be used for SVLTE and carrier aggregation requiring very high linearity. This IC has a 1.8 V CMOS compatible decoder. The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and high linearity. (Application: LTE/CDMA/GSM/UMTS Handsets and mini base-stations ) Features ◆ Very Low Insertion loss: 0.23dB (Typ.) (Cellular Band ) 0.35 dB (Typ.) (IMT2000 ) ◆ Ultra-high linearity: IIP3 = 82dBm (Min.) for SVLTE 2f0 = -78dBm(Max) at Band13, Pin=25dBm 3f0 = -95dBm (Typ.) at Band17, Pin=25dBm ◆ Low voltage operation: VDD = 2.5 V ◆ No DC blocking capacitors required on RF ports ◆ 2 Control input ◆ Small package size: VQFN-18 pin (2.4 mm × 2.0 mm) ◆ Lead-Free and RoHS compliant Structure GaAs JPHEMT MMIC switch, CMOS decoder Moisture Sensitivity Moisture Sensitivity Level for this part is MSL= 2 Absolute Maximum Ratings ♦ Bias voltage VDD 4 V (Ta = 25 ˚C) ♦ Control voltage Vctl 4 V (Ta = 25 ˚C) 36 dBm ♦ Maximum input power ♦ Operating temperature Topr –35 to +90 ˚C ♦ Storage temperature Tstg –65 to +150 ˚C (Duty cycle = 12.5 to 50 %, Ta = 25 ˚C) This IC is ESD sensitive device. Special handling precautions are required. 1 CXM3645ER Block Diagram DPDT Antenna Switch RF3 RF1 RF2 Decoder Logic RF4 MMIC Switch VDD CTL A/B F1 RF1 RF3 F2 RF4 F3 RF2 F4 Truth Table CTL A CTL B Active path F1 F2 F3 F4 L L RF1-RF4 RF2-RF3 OFF ON OFF ON L H RF1-RF3 RF2-RF4 ON OFF ON OFF H L RF1-RF4 RF2,RF3 Off OFF ON OFF OFF H H RF1-RF3 RF2,RF4 Off ON OFF OFF OFF 2 CXM3645ER Pin Configuration VQFN-18P PKG (2.4mm x 2.0mm) 18 GND 1 GND CTLA 12 11 GND 2 3 DC Bias Condition Parameter Min. Typ. Max. VDD 2.5 2.7 3.3 Vctl (H) 1.35 1.8 3.3 Vctl (L) 0 — 0.45 Unit V 3 4 5 GND 17 RF4 CTLB 13 RF3 16 GND GND 14 GND 15 GND VDD GND (Top View) 10 GND 9 RF1 8 GND 7 RF2 6 GND CXM3645ER Target Electrical Characteristics (Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V) Item Symbol Path RF1-RF4 RF2-RF3 RF1-RF3 RF2-RF4 Insertion loss IL RF1-RF4 (RF2,RF3 Off) RF1-RF3 (RF2,RF4 Off) RF1-RF4 RF2-RF3 RF1-RF3 RF2-RF4 Isolation ISO RF2-RF3 (RF1-RF4 Active) RF2-RF4 (RF1-RF3 Active) VSWR VSWR All ports in active paths 2fo Condition Min. Typ. Max. *1, *2, *3, *7, *9 ― 0.23 0.33 *4, *5, *8, *10 ― 0.35 0.45 *6 ― 0.47 0.62 *1, *2, *3, *7, *9 ― 0.23 0.33 *4, *5, *8, *10 ― 0.35 0.45 *6 ― 0.47 0.62 *1, *2, *3, *7, *9 ― 0.23 0.33 *4, *5, *8, *10 ― 0.35 0.45 *6 ― 0.47 0.62 *1, *2, *3, *7, *9 ― 0.23 0.33 *4, *5, *8, *10 ― 0.35 0.45 *6 ― 0.47 0.62 *1, *2, *3, *7, *9 20 23 ― *4, *5, *8, *10 14 16.5 ― *6 12 14.5 ― *1, *2, *3, *7, *9 20 25 ― *4, *5, *8, *10 14 18.5 ― *6 12 16.5 ― *1, *2, *3, *7, *9 16 19 ― *4, *5, *8, *10 10 12.5 ― *6 8 10.5 ― *1, *2, *3, *7, *9 16 19 ― *4, *5, *8, *10 10 12.5 ― *6 8 10.5 ― 700 to 2700 MHz ― ― 1.5 ― -60 -45 ― -61 -45 ― -58 -50 ― -68 -55 ― ― -60 ― ― -65 ― -81 -78 -95 -85 *7 3fo 2fo 3fo Harmonics 2fo 3fo *8 RF1-RF4, RF3 RF2-RF3, RF4 *3, *4, *6 2f0 *2 3f0 *1 4 Unit dB dB dB dB ― dBm CXM3645ER Item Symbol Path IMD2 Inter modulation distortion in Rx Band IMD3 RF1-RF4, RF3 RF2-RF3, RF4 Condition Min. Typ. Max. Unit *11, *12, *13, *16, *17, *20, *21, *24, *25 ― ― -110 *11, *14, *15, *18, *19, *22, *23, *26, *27 ― ― -110 *11, *28 ― ― -104 *11, *29 ― ― -110 *11, *30 ― ― -104 6.5 9.5 µs 20 µs dBm Switching speed Ts 50 % Ctl to 90 % RF ― Wakeup time Twu VDD = 2.5 V to 90 % RF, Pin = 0 dBm ― Control current Ictl Vctl = 1.8 V ― 1 5 µA Supply current Idd VDD = 2.7 V ― 0.15 0.35 mA Electrical characteristics are measured with all RF ports terminated in 50 Ω. *1 *2 *3 *4 *5 *6 *7 *8 *9 *10 *11 Pin = 25 dBm, 704 to 716 MHz (Band 17) Pin = 25 dBm, 777 to 787 MHz (Band 13) Pin = 26 dBm, 824 to 960 MHz (Band 5, Band 8) Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx) Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx) Pin = 26 dBm, 2500 to 2690 MHz (Band 7) Pin = 35 dBm, 824 to 915 MHz (GSM850/900 Tx) Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx) Pin = 10 dBm, 869 to 960 MHz (GSM850/900 Rx) Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx) Measured with the recommended circuit. 5 CXM3645ER IMD Condition (1) Band Band 1 Band 2 Band 5 Band 7 fRx on RF [MHz] 2140 1960 880 2655 fTx +20 dBm on RF3/RF4 [MHz] fBlocker –15 dBm on RF1/RF2 [MHz] 1950 1880 835 2535 IMD condition IMD2 (fRx – fTx) 190 *12 IMD2 (fRx + fTx) 4090 *13 IMD3 (2fTx – fRx) 1760 *14 IMD3 (2fTx + fRx) 6040 *15 IMD2 (fRx – fTx) 80 *16 IMD2 (fRx + fTx) 3840 *17 IMD3 (2fTx – fRx) 1800 *18 IMD3 (2fTx + fRx) 5720 *19 IMD2 (fRx – fTx) 45 *20 IMD2 (fRx + fTx) 1715 *21 IMD3 (2fTx – fRx) 790 *22 IMD3 (2fTx + fRx) 2550 *23 IMD2 (fRx – fTx) 120 *24 IMD2 (fRx + fTx) 5190 *25 IMD3 (2fTx – fRx) 2415 *26 IMD3 (2fTx + fRx) 7725 *27 IMD Condition (2) Band fRx on RF [MHz] fTx PTx = +23 dBm on RF3/RF4 [MHz] Band 13 747 786 IMD3 (2fTx – fRx) 825 *28 872 782 IMD3 (fTx + fRx)/2 827 *29 872 827 IMD3 (2fTx – fRx) 782 *30 BC0 fBlocker PBlocker = +14 dBm on RF1/RF2 [MHz] 6 IMD condition CXM3645ER Triple Beat Ratio (VDD = 2.5 V, Ta = 25 °C) Condition Item Triple beat ratio Symbol TBR Path RF1-RF4, RF3 RF2-RF3, RF4 Input power at RF3/ RF4 [dBm] Tx1 at RF3/ RF4 [MHz] Tx2 at RF3/ RF4 [MHz] Jammer at RF1/RF2 –30 dBm [MHz] Triple beat product at RF [MHz] 21.5 835.5 836.5 881.5 21.5 1880 1881 13.5 1732 1733 Min. Typ. Max. 881.5 ± 1 88 ― ― 1960 1960 ± 1 88 ― ― 2132 2132 ± 1 88 ― ― Unit dBc * Electrical characteristics are measured with all RF ports terminated in 50 Ω. Measured with the recommended circuit. IIP2 (VDD = 2.5 V, Ta = 25 °C) Condition Item Input IP2 Symbol IIP2 Path RF1-RF4, RF3 RF2-RF3, RF4 Tx at RF3/RF4 24 dBm [MHz] Jammer at RF1/RF2 –20 dBm [MHz] IM2 product at RF [MHz] Min. Typ. Max. 836.61 1718.22 881.61 113.5 ― ― 836.61 45 881.61 95.5 ― ― 1885 3850 1965 95.5 ― ― 1885 80 1965 95.5 ― ― 1732.5 3865 2132.5 95.5 ― ― 1732.5 400 2132.5 95.5 ― ― * Electrical characteristics are measured with all RF ports terminated in 50 Ω. Measured with the recommended circuit. 7 Unit dBm CXM3645ER Recommended Circuit (Top View) RF4 VDD 15 14 13 12 11 10 C2 16 C1 RF1 (ANT) 9 L1 CTLB 17 8 C1 CTLA RF2 (ANT) 7 18 L1 1 2 3 4 5 6 RF3 *1 No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias) *2 The DC levels of all RF ports are GND. *3 L1 (27nH) and C1(12pF) are recommended on Ant port for ESD protection. *4 C2(100pF) is recommended on VDD pin for Decoupling Capacitor. 8 CXM3645ER Recommended Land Pattern 9 CXM3645ER Package Outline (Unit: mm) 10 CXM3645ER Tape and Reel Size CXM3645ER-T9 11 CXM3645ER Note Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. 12