CXM3593UR High Power DPDT Switch CXM3593UR Description The CXM3593UR is a high power DPDT switch for wireless communication systems. This IC has a 1.8 V CMOS compatible decoder. The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and high linearity. (Application: LTE/CDMA/GSM/UMTS Handsets ) Features ◆ Low Insertion loss: 0.26dB (Typ.) (Cellular Band ) 0.45 dB (Typ.) (IMT2000 ) ◆ Low voltage operation: VDD = 2.5 V ◆ No DC blocking capacitors required on RF ports ◆ 2 Control input ◆ Small package size: UQFN-12 pin (2.0 mm × 2.0 mm) ◆ Lead-Free and RoHS compliant Structure GaAs JPHEMT MMIC switch, CMOS decoder Moisture Sensitivity Moisture Sensitivity Level for this part is MSL= 2 (Tentative) Absolute Maximum Ratings ♦ Bias voltage VDD 4 V (Ta = 25 ˚C) ♦ Control voltage Vctl 4 V (Ta = 25 ˚C) 36 dBm ♦ Operating temperature Topr –35 to +90 ˚C ♦ Storage temperature Tstg –65 to +150 ˚C ♦ Maximum input power (Duty cycle = 12.5 to 50 %, Ta = 25 ˚C) This IC is ESD sensitive device. Special handling precautions are required. 1 CXM3593UR Block Diagram DPDT Antenna Switch RF3 RF1 RF2 Decoder Logic RF4 VDD CTL 1/2 MMIC Switch F4 RF1 RF3 F1 F3 RF4 RF2 F2 Truth Table CTL 1 CTL 2 Active path F1,F3 F2,F4 L H RF1-RF4 RF2-RF3 ON OFF H L RF1-RF3 RF2-RF4 OFF ON 2 CXM3593UR Pin Configuration CTL2 2 CTL1 3 RF3 GND 11 10 UQFN-12P PKG 2.0m x 2.0mm GND 4 5 6 GND 1 12 RF2 VDD GND (Top View) DC Bias Condition Parameter Min. Typ. Max. VDD 2.5 2.85 3.3 Vctl (H) 1.35 1.8 3.3 Vctl (L) 0 — 0.45 Unit V 3 9 RF4 8 GND 7 RF1 CXM3593UR Target Electrical Characteristics (Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V) Item Symbol Path RF1-RF4 RF2-RF3 Insertion Loss IL RF1-RF3 RF2-RF4 RF1-RF4 RF2-RF3 Isolation ISO RF1-RF3 RF2-RF4 Condition Min. Typ. Max. *1, *2, *6, *8 ― 0.26 0.36 *3, *4, *7, *9 ― 0.45 0.55 *5 ― 0.55 0.70 *1, *2, *6, *8 ― 0.26 0.36 *3, *4, *7, *9 ― 0.45 0.55 *5 ― 0.55 0.70 *1, *2, *6, *8 22 25 ― *3, *4, *7, *9 16 18 ― *5 14 16 ― *1, *2, *6, *8 22 26 ― *3, *4, *7, *9 16 19 ― *5 15 17 ― 1.5 Unit dB dB VSWR VSWR All ports in active paths 700 to 2700 MHz ― ― P0.1dB Compression Point P0.1 RF1-RF4, RF3 RF2-RF3, RF4 800 to 2200 MHz 35 38 ― -50 –41 ― -49 –41 ― -60 –45 ― -56 –45 ― -70 –50 ― -68 –50 *10, *11, *12, *15, *16, *19, *20, *23, *24 ― ― –108 *10, *13, *14, *17, *18, *21, *22, *25, *26 ― ― –108 3 5 µs 20 µs 2fo *6 3fo Harmonics 2fo 3fo RF1-RF4, RF3 RF2-RF3, RF4 2fo *7 *2, *3, *5 3fo ― dBm dBm Inter modulation distortion in Rx Band IMD2 Switching speed Ts 50 % Ctl to 90 % RF ― Wakeup time Twu VDD = 2.5 V to 90 % RF, Pin = 0 dBm ― Control current Ictl Vctl = 1.8 V ― 1 5 µA Supply current Idd VDD = 2.85 V ― 0.15 0.25 mA IMD3 RF1-RF4, RF3 RF2-RF3, RF4 Electrical characteristics are measured with all RF ports terminated in 50 Ω. *1 *2 *3 *4 *5 *6 *7 *8 *9 *10 Pin = 25 dBm, 704 to 787 MHz (Band 13, Band 17) Pin = 26 dBm, 824 to 960 MHz (Band 5, Band 8) Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx) Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx) Pin = 26 dBm, 2500 to 2690 MHz (Band 7) Pin = 35 dBm, 824 to 915 MHz (GSM850/900 Tx) Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx) Pin = 10 dBm, 869 to 960 MHz (GSM850/900 Rx) Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx) Measured with the recommended circuit. 4 dBm CXM3593UR IMD Condition Band Band 1 Band 2 Band 5 Band 7 fRx on RF [MHz] 2140 1960 880 2655 fTx +20 dBm on RF [MHz] fBlocker –15 dBm on ANT [MHz] 1950 1880 835 2535 5 IMD condition IMD2 (fRx – fTx) 190 *11 IMD2 (fRx + fTx) 4090 *12 IMD3 (2fTx – fRx) 1760 *13 IMD3 (2fTx + fRx) 6040 *14 IMD2 (fRx – fTx) 80 *15 IMD2 (fRx + fTx) 3840 *16 IMD3 (2fTx – fRx) 1800 *17 IMD3 (2fTx + fRx) 5720 *18 IMD2 (fRx – fTx) 45 *19 IMD2 (fRx + fTx) 1715 *20 IMD3 (2fTx – fRx) 790 *21 IMD3 (2fTx + fRx) 2550 *22 IMD2 (fRx – fTx) 120 *23 IMD2 (fRx + fTx) 5190 *24 IMD3 (2fTx – fRx) 2415 *25 IMD3 (2fTx + fRx) 7725 *26 CXM3593UR Recommended Circuit RF3 11 12 VDD 10 1 9 CTL2 2 8 CTL1 3 7 RF4 C2 C1 RF1 L1 5 4 6 L1 C1 RF2 *1 No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias) *2 The DC levels of all RF ports are GND. *3 L1 (27nH) and C1(12pF) are recommended on Ant port for ESD protection. *4 C2(100pF) is recommended on VDD pin for Decoupling Capacitor. 6 CXM3593UR Recommended Land Pattern 7 CXM3593UR Package Outline (Unit: mm) 8 CXM3593UR Marking 9 CXM3593UR Tape and Reel Size CXM3593UR-T9 10 CXM3593UR Note Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. 11