Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Amplifiers - Driver & Gain Block - SMT 8 Typical Applications Features The HMC478SC70(E) is an ideal for: P1dB Output Power: +17 dBm • Cellular / PCS / 3G Gain: 23 dB • WiBro / WiMAX / 4G Output IP3: +31 dBm • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os • CATV, Cable Modem & DBS Single Supply: +5V to +8V • Microwave Radio & Test Equipment Industry Standard SC70 Package Functional Diagram General Description The HMC478SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 4 GHz. This industry standard SC70 packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +17 dBm output power. The HMC478SC70(E) offers 23 dB of gain with a +31 dBm output IP3 at 850 MHz while requiring only 62 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 5V, Rbias= 18 Ohm, TA = +25° C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz Gain Gain Variation Over Temperature Typ. 20 16 13 11 24 20 17 15 Max. Units dB dB dB dB DC - 4 GHz 0.015 Input Return Loss DC - 3.0 GHz 3.0 - 4.0 GHz 15 17 dB dB Output Return Loss DC - 3.0 GHz 3.0 - 4.0 GHz 15 13 dB dB Reverse Isolation DC - 4 GHz 0.02 dB/ °C 20 dB 16 15 12 dBm dBm dBm Output Power for 1 dB Compression (P1dB) 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 31 28 25 dBm dBm dBm Noise Figure DC - 3.0 GHz 3.0 - 4.0 GHz 2.5 2.8 dB dB Supply Current (Icq) 8-1 Min. 13 11 9 62 82 For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] mA HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Gain vs. Temperature 30 20 25 10 20 S21 S11 S22 0 15 -10 10 -20 5 -30 +25C +85C -40C 0 0 1 2 3 4 5 6 7 8 0 1 FREQUENCY (GHz) 3 4 5 Output Return Loss vs. Temperature 0 0 -5 -5 S21 S11 S22 -10 RETURN LOSS (dB) RETURN LOSS (dB) 2 FREQUENCY (GHz) Input Return Loss vs. Temperature -15 -20 -25 +25C +85C -40C -10 -15 -20 -25 -30 -30 0 1 2 3 4 5 0 1 FREQUENCY (GHz) 2 3 4 5 4 5 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 10 0 -5 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 8 Amplifiers - Driver & Gain Block - SMT 30 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss +25C +85C -40C -10 -15 -20 +25C +85C -40C 6 4 2 -25 0 -30 0 1 2 3 FREQUENCY (GHz) 4 5 0 1 2 3 FREQUENCY (GHz) For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-2 HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz 24 20 20 16 16 Psat (dBm) P1dB (dBm) Psat vs. Temperature 24 12 +25C +85C -40C 8 12 +25C +85C -40C 8 4 4 0 0 0 1 2 3 4 5 0 1 FREQUENCY (GHz) Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 30 25 +25C +85C -40C 15 10 0 1 2 3 4 5 Gain, Power & Output IP3 vs. Supply Voltage for Rs = 18 Ohms @ 850 MHz 35 20 2 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dBm) Amplifiers - Driver & Gain Block - SMT 8 P1dB vs. Temperature 3 4 5 34 32 30 28 26 24 22 20 18 16 14 12 10 8 4.75 Gain P1dB Psat IP3 5 Vs (Vdc) FREQUENCY (GHz) Icc vs. Vcc Over Temperature for Fixed Vs= 5V, Rbias= 18 Ohms 80 75 +85C Icc (mA) 70 65 +25C 60 55 -40C 50 45 40 3.60 3.70 3.80 3.90 4.00 4.10 4.20 Vcc (V) 8-3 For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 5.25 HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Collector Bias Voltage (Vcc) +6 Vdc Collector Bias Current (Icc) 100 mA RF Input Power (RFIN)(Vcc = +2.4 Vdc) +5 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 9 mW/°C above 85 °C) 0.583 W Thermal Resistance (junction to lead) 111.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD MATERIAL: COPPER ALLOY 3. LEAD PLATING: Sn/Pb 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 8 Amplifiers - Driver & Gain Block - SMT Absolute Maximum Ratings 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC478SC70 Low Stress Injection Molded Plastic Sn/Pb MSL1 [1] HMC478SC70E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking 478E 478E [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-4 HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Amplifiers - Driver & Gain Block - SMT 8 Pin Descriptions Pin Number Function Description Interface Schematic 1, 2, 4, 5 GND These pins must be connected to RF/DC ground. 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 6 RFOUT RF output and DC Bias (Vcc) for the output stage. Application Circuit Recommended Bias Resistor Values for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 5V 6V 8V Rbias Value 18 Ω 35 Ω 67 Ω Rbias Power Rating 1/8 W 1/4 W 1/2 W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2.Rbias provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Component 8-5 Frequency (MHz) 50 900 1900 2200 2400 3500 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC478SC70 / 478SC70E v02.0814 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Evaluation PCB Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1 - C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 µF Capacitor, Tantalum R1 18 Ohm Resistor, 1210 Pkg. L1 18 nH Inductor, 0603 Pkg. U1 HMC478SC70(E) PCB [2] 117360 Evaluation PCB [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Amplifiers - Driver & Gain Block - SMT List of Materials for Evaluation PCB 118039 8 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-6