TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC593LP3 / 593LP3E v03.0309 Typical Applications Features The HMC593LP3(E) is ideal for: Noise Figure: 1.2 dB • Wireless Infrastructure Output IP3: +29 dBm • Fixed Wireless Gain: 19 dB • WiMAX WiBro / 4G Low Loss LNA Bypass Path • Tower Mounted Amplifiers Single Supply: +3V or +5V TE 50 Ohm Matched Output Functional Diagram General Description LE The HMC593LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for WiBro & WiMAX receivers operating between 3.3 and 3.8 GHz and provides 1.2 dB noise figure, 19 dB of gain and +29 dBm IP3 from a single supply of +5V @ 40mA. Input and output return losses are 23 and 13 dB respectively with no external matching components required. A single control line (0/Vdd) is used to switch between LNA mode and a low 2 dB loss bypass mode reducing the current consumption to 10 μA. B SO LOW NOISE AMPLIFIERS - SMT 8 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz Electrical Specifi cations, TA = +25° C Vdd = +3V Parameter LNA Mode Min. Typ. 14 17 Max. Min. Typ. -3 -2 O Frequency Range Gain Gain Variation Over Temperature 0.011 1.4 Input Return Loss 23 30 Output Return Loss 12 25 Reverse Isolation 39 10 LNA Mode Bypass Mode Units Max. Min. Typ. Max. Min. Typ. Max. -3 -2 dB 0.002 dB / °C 23 30 dB 13 25 3.3 - 3.8 16 0.002 Noise Figure Power for 1dB Compression (P1dB)* Vdd = +5V Bypass Mode GHz 19 0.011 1.8 1.2 1.6 dB 36 13 30 13 16 30 dBm Saturated Output Power (Psat) 13.5 17 dBm Third Order Intercept (IP3)* (-20 dBm Input Power per tone, 1 MHz tone spacing) 22 29 dBm Supply Current (Idd) Switching Speed LNA Mode to Bypass Mode Bypass Mode to LNA Mode 20 25 0.01 428 40 50 0.01 428 343 mA ns 343 * P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN. 8 - 190 dB dB For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com ns HMC593LP3 / 593LP3E v03.0309 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz 30 20 20 10 S21 S11 S22 0 0 -10 TE -10 10 -20 -30 -20 2.5 3.0 3.5 4.0 4.5 -40 2.0 5.0 20 B SO GAIN (dB) Vdd = 3V NOISE FIGURE (dB) 2 19 14 3.3 3.4 3.5 3.6 3.7 1.5 5.0 1 T=+25C T=-40C 0.5 +25C +85C -40C 0 3.3 3.8 Vdd=3V Vdd=5V 3.4 1.8 19 1.7 18 1.6 NOISE FIGURE (dB) 20 17 16 15 14 +2.4V +2.7V +3.0V 13 3.4 3.5 3.6 3.7 3.8 3.7 3.8 FREQUENCY (GHz) LNA Noise Figure vs. Vdd O LNA Gain vs. Vdd GAIN (dB) 4.5 T=+85C FREQUENCY (GHz) 12 3.3 4.0 2.5 Vdd = 5V 15 3.5 LNA Noise Figure vs. Temperature 21 16 3.0 FREQUENCY (GHz) LNA Gain vs. Temperature 17 2.5 LE FREQUENCY (GHz) 18 S21 S11 S22 -30 LOW NOISE AMPLIFIERS - SMT 30 -40 2.0 8 LNA Broadband Gain & Return Loss @ Vdd= 5V RESPONSE (dB) RESPONSE (dB) LNA Broadband Gain & Return Loss @ Vdd= 3V +4.5V +5.0V +5.5V 3.5 3.6 FREQUENCY (GHz) 1.5 1.4 1.3 1.2 2.4V 2.7V 3.0V 1.1 3.7 3.8 1 3.3 3.4 4.5V 5.0V 5.5V 3.5 3.6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 191 HMC593LP3 / 593LP3E v03.0309 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz 8 LNA Input Return Loss vs. Temperature @ Vdd= 3V LNA Input Return Loss vs. Temperature @ Vdd= 5V RETURN LOSS (dB) +25C +85C -40C -30 3.4 3.5 3.6 3.7 3.5 3.6 3.7 3.8 3.7 3.8 LE 0 +25C +85C -40C 3.4 3.5 3.6 +25C +85C -40C -5 B SO -5 -25 3.3 3.4 LNA Output Return Loss vs. Temperature @ Vdd= 5V 0 -20 -30 FREQUENCY (GHz) LNA Output Return Loss vs. Temperature @ Vdd= 3V -15 -20 -40 3.3 3.8 FREQUENCY (GHz) -10 +25C +85C -40C -10 TE -20 3.7 RETURN LOSS (dB) RETURN LOSS (dB) 0 -10 -40 3.3 RETURN LOSS (dB) LOW NOISE AMPLIFIERS - SMT 0 -10 -15 -20 -25 3.3 3.8 3.4 FREQUENCY (GHz) 3.5 3.6 FREQUENCY (GHz) LNA Output IP3 vs. Vdd O LNA Output IP3 vs. Temperature 34 32 Vdd = 5V 30 30 26 24 26 IP3 (dBm) IP3 (dBm) 28 +25C +85C -40C Vdd = 3V 22 22 18 20 14 18 16 3.3 3.4 3.5 3.6 FREQUENCY (GHz) 8 - 192 3.7 3.8 10 3.3 2.4V 2.7V 3.0V 3.4 3.5 4.5V 5.0V 5.5V 3.6 3.7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3.8 HMC593LP3 / 593LP3E v03.0309 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz LNA Psat vs. Temperature 20 +25C +85C -40C Vdd = 5V 2.4V 2.7V 3.0V 20 4.5V 5.0V 5.5V Psat (dBm) 18 16 14 16 TE 14 12 12 Vdd = 3V 10 3.3 3.4 3.5 3.6 3.7 10 3.3 3.8 FREQUENCY (GHz) 3.4 3.5 3.6 3.7 3.8 LE FREQUENCY (GHz) LNA Output P1dB vs. Temperature 20 LNA Output P1dB vs. Vdd 20 +25C +85C -40C 18 18 Vdd = 5V 14 12 10 3.3 Vdd = 3V 3.4 3.5 3.6 3.7 P1dB (dBm) 16 B SO P1dB (dBm) 16 14 12 LOW NOISE AMPLIFIERS - SMT 22 18 Psat (dBm) 8 LNA Psat vs. Vdd 10 3.8 2.4V 2.7V 3.0V 8 6 3.3 3.4 3.5 FREQUENCY (GHz) 3.6 4.5V 5.0V 5.5V 3.7 3.8 FREQUENCY (GHz) -25 +25C +85C -40C -30 ISOLATION (dB) O LNA Reverse Isolation vs. Temperature Vdd = 3V -35 Vdd = 5V -40 -45 3.3 3.4 3.5 3.6 3.7 3.8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 193 HMC593LP3 / 593LP3E v03.0309 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz Bypass Mode Broadband Gain & Return Loss [2] 0 -5 -5 RESPONSE (dB) 0 S21 S11 S22 -10 -20 2.5 3.0 3.5 4.0 4.5 -25 2.0 5.0 0 B SO +25C +85C -40C 3.4 3.5 3.6 3.7 4.5 5.0 -1 -2 -3 +25C +85C -40C -4 -5 3.3 3.8 O Bypass Mode, Input IP3 vs. Temperature 3.4 0 -1 -1 +25C +85C -40C -3 -4 -5 3.3 3.5 3.6 FREQUENCY (GHz) [1] Vdd = 3V 3.7 3.8 3.7 3.8 -2 -3 +25C +85C -40C -4 3.4 3.6 Bypass Mode, P1dB vs. Temperature 0 -2 3.5 FREQUENCY (GHz) INSERTION LOSS (dB) INSERTION LOSS (dB) 4.0 Bypass Mode Insertion Loss vs. Temperature [2] FREQUENCY (GHz) 8 - 194 3.5 0 -1 -5 3.3 3.0 FREQUENCY (GHz) Bypass Mode Insertion Loss vs. Temperature [1] -4 2.5 LE FREQUENCY (GHz) -3 -15 -20 -25 2.0 -2 S21 S11 S22 -10 TE -15 INSERTION LOSS (dB) RESPONSE (dB) Bypass Mode Broadband Gain & Return Loss [1] INSERTION LOSS (dB) LOW NOISE AMPLIFIERS - SMT 8 -5 3.3 3.4 3.5 3.6 3.7 FREQUENCY (GHz) [2] Vdd = 5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3.8 HMC593LP3 / 593LP3E v03.0309 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz Typical Supply Current vs. Vdd Vdd (V) -1 -2 +2.4 9 +2.7 12 +3.0 16 +4.5 33 +5.0 39 +5.5 44 -3 -5 3.3 Absolute Maximum Ratings +25C +85C -40C -4 3.4 3.5 3.6 TE INSERTION LOSS (dB) 0 Drain Bias Voltage (Vdd) 3.7 3.8 +8 V RF Input Power (RFIN) (Vdd = +5.0 Vdc) LNA Mode +15 dBm Bypass Mode +30 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 13 mW/°C above 85 °C) 850 mW LE FREQUENCY (GHz) Thermal Resistance (channel to ground paddle) 76.9 °C/W Storage Temperature -65 to +150° C Operating Temperature -40 to +85° C ESD Sensitivity (HBM) Class 1A B SO Outline Drawing 8 Idd (mA) LOW NOISE AMPLIFIERS - SMT Bypass Mode, Psat vs. Temperature O NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC593LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC593LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 593 XXXX [2] 593 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 195 HMC593LP3 / 593LP3E v03.0309 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz Truth Table LNA Mode Vctl= Vdd Bypass Mode Vctl= 0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Pin Descriptions Description N/C No connection necessary. These pins may be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 4, 7, 15 GND These pins must be connected to RF/DC ground. 10 RFOUT This pin is AC coupled and matched to 50 Ohms. 14 Vdd Power supply voltage. Bypass capacitors are required. See application circuit. 16 Interface Schematic TE Function 1, 2, 5, 6, 8, 9, 11 - 13 LE Pin Number B SO LOW NOISE AMPLIFIERS - SMT 8 Vctl LNA/Bypass Mode Control Voltage. See truth table. O Application Circuit 8 - 196 Component Value C1, C2 100pF C3 10KpF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC593LP3 / 593LP3E v03.0309 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz TE LE B SO LOW NOISE AMPLIFIERS - SMT 8 Evaluation PCB O List of Materials for Evaluation PCB 117160 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 - J6 DC Pin C1, C2 100 pF Capacitor, 0402 Pkg. C3 10 KpF Capacitor, 0402 Pkg. U1 HMC593LP3 / HMC593LP3E Amplifier PCB [2] 117158 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 197