TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC605LP3 / 605LP3E v04.1013 Features The HMC605LP3 / HMC605LP3E is ideal for: Noise Figure: 1.1 dB • Wireless Infrastructure Output IP3: +31 dBm • Customer Premise Equipment Gain: 20 dB • Fixed Wireless Low Loss & Failsafe Bypass Path • WiMAX & WiBro Single Supply: +3V or +5V • Tower Mounted Amplifiers 50 Ohm Matched Output/Input Functional Diagram General Description TE Typical Applications LE The HMC605LP3 / HMC605LP3E are versatile, high dynamic range GaAs MMIC Low Noise Amplifi ers that integrate a low loss LNA bypass path on the IC. The amplifi er is ideal for WiBro & WiMAX receivers operating between 2.3 and 2.7 GHz and provides 1.1 dB noise figure, 20 dB of gain and +31 dBm output IP3 from a single supply of +5V @ 74 mA. Input and output return losses are 14 and 15 dB respectively with no external matching components required. A single control line (Vctl) is used to switch between LNA mode and a low 2 dB loss bypass mode and reduces the current consumption to 10 μA. The HMC605LP3 is failsafe and will default to the bypass mode with no DC power applied. B SO LOW NOISE AMPLIFIERS - SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz Electrical Specifications, TA = +25° C, Vdd = 5V Parameter LNA Mode Min. Frequency Range Gain Variation Over Temperature Min. 17.5 Typ. 2.3 - 2.7 20.5 -3.0 0.012 Max. Units GHz -2.0 dB 0.002 dB / °C Noise Figure 1.1 Input Return Loss 14 13 dB Output Return Loss 15 13 dB Reverse Isolation 33 Power for 1dB Compression (P1dB)[1] 17 14 dBm Third Order Intercept (IP3) [2] 31 Supply Current (Idd) 74 Switching Speed [1] [2] 1 Max. 2.3 - 2.7 O Gain Typ. Bypass Mode 1.3 dB dB 90 23 dBm 0.01 mA LNA Mode to Bypass Mode - 6.0 ns Bypass Mode to LNA Mode 60 - ns P1dB and IIP3 is referenced to RFOUT for LNA mode and to RFIN for Bypass Mode. For LNA Mode: Input tone power is -20 dBm/tone at 1 MHz tone spacing. For Bypass Mode: Input tone power is 0dBm/tone at 1MHz tone spacing For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC605LP3 / 605LP3E v04.1013 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz LNA Broadband Gain & Return Loss 30 GAIN (dB), P1dB (dBm) 10 S21 S11 S22 0 20 2 15 1.5 10 1 TE -10 2.5 -20 -30 Gain P1dB 5 0.5 Noise Figure 0 0 -40 3 1 2 3 4 5 6 GAIN (dB) B SO +25C +85C -40C 2.4 2.5 2.6 NOISE FIGURE (dB) 1.6 22 14 2.3 1.2 0.8 0 2.3 2.7 +25C -40C +85C 0.4 2.4 FREQUENCY (GHz) 1.5 22 1.3 NOISE FIGURE (dBm) GAIN (dB) 24 20 18 +3V +5V 16 2.4 2.5 2.6 2.7 2.6 2.7 FREQUENCY (GHz) LNA Noise Figure vs. Vdd O LNA Gain vs. Vdd 14 2.3 5 LNA Noise Figure vs. Temperature 24 16 4.5 LE LNA Gain vs. Temperature 18 4 Vdd (Vdc) FREQUENCY (GHz) 20 3.5 NOISE FIGURE (dB) RESPONSE (dB) 20 25 LOW NOISE AMPLIFIERS - SMT LNA Gain, Noise Figure & Power vs. Supply Voltage @ 2.5 GHz 2.5 FREQUENCY (GHz) 2.6 2.7 1.1 3V 5V 0.9 0.7 0.5 2.3 2.4 2.5 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC605LP3 / 605LP3E v04.1013 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz 0 -5 -5 RETURN LOSS (dB) 0 -15 +25C +85C -40C -25 -30 2.3 2.35 2.4 2.45 2.5 2.55 2.6 2.65 -30 2.3 2.7 32 25 2.3 +25C -40C +85C 2.35 2.4 2.45 2.5 2.55 2.6 2.65 2.6 2.65 2.7 2.65 2.7 25 +3V +5V 15 10 2.3 2.35 2.4 O 2.5 2.55 2.6 LNA Output P1dB vs. Temperature 24 +25C +85C -40C +25C +85C -40C 22 P1dB (dBm) 22 2.45 FREQUENCY (GHz) 24 PSAT (dBm) 2.55 20 2.7 LNA Psat vs. Temperature 20 18 16 20 18 16 2.4 2.5 FREQUENCY (GHz) 3 2.5 30 FREQUENCY (GHz) 14 2.3 2.45 LNA Output IP3 vs. Vdd B SO 26 2.4 35 33 27 2.35 40 34 28 -20 LE 35 29 -15 FREQUENCY (GHz) LNA Output IP3 vs. Temperature 30 -10 -25 FREQUENCY (GHz) 31 +25C +85C -40C TE -20 IP3 (dBm) RETURN LOSS (dB) LNA Output Return Loss vs. Temperature -10 OUTPUT IP3 (dBm) LOW NOISE AMPLIFIERS - SMT LNA Input Return Loss vs. Temperature 2.6 2.7 14 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC605LP3 / 605LP3E v04.1013 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz LNA Output P1dB vs. Vdd LNA Reverse Isolation vs. Temperature 35 ISOLATION (dB) -10 25 -30 15 10 2.3 2.3 2.4 2.5 2.5 2.5 2.6 2.6 -40 2.3 2.7 Bypass Mode Broadband Gain & Return Loss 2 3 4 5 -1 -2 +25C +85C -40C -3 -4 -5 2.3 6 2.4 0 -5 -5 RETURN LOSS (dB) 0 -10 -15 +25C +85C -40C -20 2.6 2.7 Bypass Mode Output Return Loss vs. Temperature [1] O Bypass Mode Input Return Loss vs. Temperature [1] 2.5 FREQUENCY (GHz) FREQUENCY (GHz) RETURN LOSS (dB) 2.7 LE B SO RESPONSE (dB) S21 S11 S22 1 -25 -30 2.3 2.6 0 -10 -40 2.5 Bypass Mode Insertion Loss vs. Temperature 0 -30 2.4 FREQUENCY (GHz) FREQUENCY (GHz) -20 +25C +85C -40C -20 TE +3V +5V 20 INSERTION LOSS (dB) IP3 (dBm) 30 LOW NOISE AMPLIFIERS - SMT 0 40 -10 -15 +25C +85C -40C -20 -25 2.35 2.4 2.45 2.5 2.55 FREQUENCY (GHz) 2.6 2.65 2.7 -30 2.3 2.35 2.4 2.45 2.5 2.55 2.6 2.65 2.7 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC605LP3 / 605LP3E v04.1013 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz Bypass Mode Input IP3 vs. Frequency Bypass Mode Input P1dB vs. Frequency 20 15 10 2.3 2.35 2.4 2.45 2.5 2.55 2.6 2.65 2.7 18 16 14 TE COMPRESSION POINT (dBm) 20 25 IP3 (dBm) 12 10 2.3 2.4 2.5 2.6 2.7 FREQUENCY (GHz) B SO LE FREQUENCY (GHz) O LOW NOISE AMPLIFIERS - SMT 30 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC605LP3 / 605LP3E v04.1013 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz RF Input Power (RFIN) (Vdd = +5.0 Vdc) +8 Vdc LNA Mode +22 dBm Bypass Mode +30 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 15.85 mW/°C above 85 °C) 1.03 mW Thermal Resistance (channel to ground paddle) 63.08 °C/W Storage Temperature -65 to +150° C Operating Temperature Vdd (Vdc) Idd (mA) +3.0 28 +5.0 74 Truth Table -40 to +100° C Vctl= Vdd + 0.3V Vctl= 0 + 0.3V LE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS LNA Mode Bypass Mode TE Drain Bias Voltage (Vdd) Typical Supply Current vs. Vdd B SO Outline Drawing LOW NOISE AMPLIFIERS - SMT Absolute Maximum Ratings O NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC605LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC605LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] 605 XXXX 605 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC605LP3 / 605LP3E v04.1013 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz Pin Descriptions Description N/C No connection necessary. These pins may be connected to RF/DC ground. Interface Schematic 3 RFIN This pin is AC coupled and matched to 50 Ohms. 4, 7, 9, 11, 15 GND These pins must be connected to RF/DC ground. 10 RFOUT This pin is AC coupled and matched to 50 Ohms. 14 Vdd Power supply voltage. Bypass capacitors are required. See application circuit. 16 Vctl LNA/Bypass Mode Control Voltage. See truth table. LE TE Function 1, 2, 5, 6, 8, 12 B SO LOW NOISE AMPLIFIERS - SMT Pin Number Application Circuit Value C1, C2 100pF C3 10KpF O Components 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC605LP3 / 605LP3E v04.1013 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz LOW NOISE AMPLIFIERS - SMT B SO LE TE Evaluation PCB O List of Materials for Evaluation PCB 117160 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 - J6 DC Pin C1, C2 100 pF Capacitor, 0402 Pkg. C3 10 KpF Capacitor, 0402 Pkg. U1 HMC605LP3 / 605LP3E Amplifier PCB [2] 117158 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8